NB212HX Transistor Datasheet. Parameters and Characteristics.

Type Designator: NB212HX

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.6

Maximum collector-base voltage |Ucb|, V: 55

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 0.5

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF: 7

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of NB212HX transistor: TO92

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See also transistors datasheet: NB212FJ , NB212FX , NB212FY , NB212H , NB212HG , NB212HH , NB212HI , NB212HJ , BC109C , NB212HY , NB212X , NB212XG , NB212XH , NB212XI , NB212XJ , NB212XX , NB212XY .

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