NB212XJ
Transistor Datasheet. Parameters and Characteristics. Type Designator: NB212XJ
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.75
Maximum collector-base voltage |Ucb|, V: 55
Maximum collector-emitter voltage |Uce|, V: 50
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 0.5
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 50
Collector capacitance (Cc), pF: 7
Forward current transfer ratio (hFE), min: 200
Noise Figure, dB: - Package of NB212XJ
transistor: SOT23
NB212XJ
Equivalent Transistors - Cross-Reference Search NB212XJ
PDF document for downloads: PDF unavailable! See also transistors datasheet: NB212HI
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. Keywords| NB212XJ
Datasheet | NB212XJ
Datenblatt | NB212XJ
RoHS | NB212XJ
Distributor | | NB212XJ
Application Notes | NB212XJ
Component | NB212XJ
Circuit | NB212XJ
Schematic | | NB212XJ
Equivalent | NB212XJ
Cross Reference | NB212XJ
Data Sheet | NB212XJ
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