NPS5130 Transistor Datasheet. Parameters and Characteristics.

Type Designator: NPS5130

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 12

Maximum emitter-base voltage |Ueb|, V: 1

Maximum collector current |Ic max|, A: 0.05

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 450

Collector capacitance (Cc), pF: 3

Forward current transfer ratio (hFE), min: 12

Noise Figure, dB: -

Package of NPS5130 transistor: TO92

NPS5130 Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: NPS4890 , NPS4916 , NPS4917 , NPS4964 , NPS4965 , NPS5127 , NPS5128 , NPS5129 , BC557 , NPS5131 , NPS5132 , NPS5133 , NPS5134 , NPS5135 , NPS5136 , NPS5137 , NPS5138 .

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