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2N501A Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N501A

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.06

Maximum collector-base voltage |Ucb|, V: 15

Maximum collector-emitter voltage |Uce|, V: 12

Maximum emitter-base voltage |Ueb|, V: 2

Maximum collector current |Ic max|, A: 0.05

Maximum junction temperature (Tj), °C: 85

Transition frequency (ft), MHz: 80

Collector capacitance (Cc), pF: 3

Forward current transfer ratio (hFE), min: 95

Noise Figure, dB: -

Package of 2N501A transistor: TO1

2N501A Equivalent Transistors - Cross-Reference Search

2N501A PDF doc:

5.1. 2n5015.pdf Size:11K _semelab

2N5015 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 1000V dia. IC = 0.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can be processed in accordance with the 0.74 (0.029) requirements of BS, CECC and JAN, 1.14 (0.045) 0.71 (0.028) JANTX, JANTXV and JANS specifications 0.86 (0.034) 45° TO39 (TO205AD) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 1000 V IC(CONT) 0.5 A hFE @ 10/25m (VCE / IC) 30 180 - ft 20M Hz PD 2 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without no

5.2. 2n5013.pdf Size:11K _semelab

2N5013 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 800V dia. IC = 0.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can be processed in accordance with the 0.74 (0.029) requirements of BS, CECC and JAN, 1.14 (0.045) 0.71 (0.028) JANTX, JANTXV and JANS specifications 0.86 (0.034) 45° TO39 (TO205AD) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 800 V IC(CONT) 0.5 A hFE @ 10/25m (VCE / IC) 30 180 - ft 20M Hz PD 2 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without noti

5.3. 2n5011.pdf Size:11K _semelab

2N5011 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 600V dia. IC = 0.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can be processed in accordance with the 0.74 (0.029) requirements of BS, CECC and JAN, 1.14 (0.045) 0.71 (0.028) JANTX, JANTXV and JANS specifications 0.86 (0.034) 45° TO39 (TO205AD) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 600 V IC(CONT) 0.5 A hFE @ 10/25m (VCE / IC) 30 180 - ft 20M Hz PD 2 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without noti

5.4. 2n5012.pdf Size:11K _semelab

2N5012 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 700V dia. IC = 0.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can be processed in accordance with the 0.74 (0.029) requirements of BS, CECC and JAN, 1.14 (0.045) 0.71 (0.028) JANTX, JANTXV and JANS specifications 0.86 (0.034) 45° TO39 (TO205AD) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 700 V IC(CONT) 0.5 A hFE @ 10/25m (VCE / IC) 30 180 - ft 20M Hz PD 2 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without noti

5.5. 2n5014.pdf Size:15K _semelab

2N5014 MECHANICAL DATA Dimensions in mm (inches) SILICON EPITAXIAL NPN TRANSISTOR FEATURES General purpose power transistor for switch- ing and linear applications in a hermetic TO–39 package. ! TO–39 PACKAGE PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) 900V VCBO Collector – Base Voltage 900V VCER Collector – Emitter Voltage R = 10 5V VEBO Emitter – Base Reverse Voltage 2W IC Continuous Collector Current 3.5A PTOT Total Device Dissipation TC = 25°C 200°C TJ Maximum Operating Junction Temperature -55 to 200°C TSTG and Storage Temperature Range ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Un

5.6. 2n5018.pdf Size:263K _linear-systems

2N5018 SERIES SINGLE P-CHANNEL Linear Integrated Systems JFET SWITCH FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5018 ZERO OFFSET VOLTAGE LOW ON RESISTANCE 75? TO-18 ABSOLUTE MAXIMUM RATINGS1 BOTTOM VIEW @ 25 °C (unless otherwise stated) Maximum Temperatures G 2 3 D Storage Temperature -55 to 200°C Junction Operating Temperature -55 to 200°C 1 S Maximum Power Dissipation Continuous Power Dissipation 500mW Maximum Currents Gate Current -50mA Maximum Voltages Gate to Drain 30V Gate to Source 30V STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) 2N5018 2N5019 SYM. CHARACTERISTIC TYP UNITS CONDITIONS MIN MAX MIN MAX BVGSS Gate to Source Breakdown Voltage 30 30 IG = 1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage 10 5 VDS = -15V, ID = -1µA V -0.5 VGS = 0V, ID = -6mA VDS(on) Drain to Source On Voltage -0.5 VGS = 0V, ID = -3mA IDSS Drain to Source Saturation Current2 -10 -5 mA VDS = -20V, VGS = 0V IGSS

5.7. 2n5013_2n5014_2n5015.pdf Size:89K _ssdi

See also transistors datasheet: 2N501-18 , 2N5012 , 2N5013 , 2N5014 , 2N5015 , 2N5015S , 2N5016 , 2N5017 , BC107 , 2N502 , 2N5022 , 2N5023 , 2N5023S , 2N5024 , 2N5025 , 2N5026 , 2N5027 .

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