2N5038 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5038
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 140 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 90 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
2N5038 Transistor Equivalent Substitute - Cross-Reference Search
2N5038 Datasheet (PDF)
2n5038 2n5039.pdf
Order this documentMOTOROLAby 2N5038/DSEMICONDUCTOR TECHNICAL DATA2N5038*2N5039NPN Silicon Transistors*Motorola Preferred Device. . . fast switching speeds and high current capacity
2n5038.pdf
2N5038HIGH CURRENT NPN SILICON TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5038 is a silicon planar multiepitaxial NPNtransistors in Jedec TO-3 metal case. They areespecially intended for high current and switching1applications.2TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collect
2n5038.pdf
2N5038NPN Silicon TransistorsFast switching speeds and high current capacity ideally suit theseparts for use in switching regulators, inverters, wide-band amplifiersand power oscillators in industrial and commercial applications.Featureshttp://onsemi.com High Speed - tf = 0.5 ms (Max) High Current - IC(max) = 30 Amps20 AMPERE Low Saturation - VCE(sat) = 2.5 V (Max)
2n5038 2n5039.pdf
ABoca Semiconductor Corp. (BSC)http://www.bocasemi.comAhttp://www.bocasemi.comhttp://www.bocasemi.com
2n5038 2n5039.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5038/2N5039 DESCRIPTION With TO-3 package High current APPLICATIONS They are especially intended for high current and fast switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER COND
2n5038.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2N5038DESCRIPTIONHigh Speed-t = 0.5s (Max)fLow Saturation Voltage-V 2.5V@ I = 20ACE(sat) CAPPLICATIONSDesigned for use in switching regulators, inverters, wide-band amplifiers and power oscillators in industrial andcommercial applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
2n5038 2n5039.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5038 2N5039 DESCRIPTION With TO-3 package High speed Low collector saturation voltage APPLICATIONS They are especially intended for high current and fast switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute max
2n5038.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N5038DESCRIPTIONHigh Speed-t = 0.5s (Max)fLow Saturation Voltage-V 2.5V@ I = 20ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust devicePerformance and reliable operation.APPLICATIONSDesigned for use in switching regulators, inverters, wide-band amplifiers and power oscillators
2n5038g.pdf
2N5038NPN Silicon TransistorsFast switching speeds and high current capacity ideally suit theseparts for use in switching regulators, inverters, wide-band amplifiersand power oscillators in industrial and commercial applications.Featureshttp://onsemi.com High Speed - tf = 0.5 ms (Max) High Current - IC(max) = 30 Amps20 AMPERE Low Saturation - VCE(sat) = 2.5 V (Max)
2n5031.pdf
140 COMMERCE DRIVEMONTGOMERYVILLE, PA18936-1013PHONE: (215) 631-9840FAX: (215) 631-98552N5031RF & MICROWAVE DISCRETELOW POWER TRANSISTORSFeatures Silicon NPN, To-72 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC21. Emitter Maximum Unilateral Gain 12 dB (typ) @ 400 MHz2. Base1 33. Collector44. Case TO-72DESCRIPTION
Datasheet: 2N503 , 2N5030 , 2N5031 , 2N5032 , 2N5034 , 2N5035 , 2N5036 , 2N5037 , S9014 , 2N5038-1 , 2N5039 , 2N5039-1 , 2N504 , 2N5040 , 2N5041 , 2N5042 , 2N5043 .