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2N5052 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N5052

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 40

Maximum collector-base voltage |Ucb|, V: 200

Maximum collector-emitter voltage |Uce|, V: 200

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 2

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz: 510

Collector capacitance (Cc), pF: 250

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of 2N5052 transistor: TO66

2N5052 Equivalent Transistors - Cross-Reference Search

2N5052 PDF doc:

1.1. 2n5050_2n5051_2n5052.pdf Size:125K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-66 package Ў¤ High breakdown voltage Ў¤ Excellent safe operating area APPLICATIONS Ў¤ Designed for driver circuits,switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5050 2N5051 2N5052 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=Ўж ) SYMBOL PARAMETER VCBO Collector-base voltage CONDITIONS 2N5050 2N5051 Open emitter VCEO Collector-emitter voltage VEBO IC PD Tj Tstg Emitter-base voltage Collector current CHA IN NG S 2N5050 2N5051 2N5052 2N5052 CON EMI TOR DUC VALUE 125 150 200 125 150 200 7 2 UNIT V Open base V Open collector V A W Ўж Ўж Total Power Dissipation Junction temperature Storage temperature TC=25Ўж 40 150 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VAL

5.1. 2n5058_2n5059.pdf Size:81K _central

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See also transistors datasheet: 2N5042 , 2N5043 , 2N5044 , 2N5048 , 2N5049 , 2N505 , 2N5050 , 2N5051 , MJE13003 , 2N5052-SM , 2N5053 , 2N5054 , 2N5055 , 2N5056 , 2N5057 , 2N5058 , 2N5058S .

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