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P307 Transistor Datasheet. Parameters and Characteristics.

Type Designator: P307

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.25

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 0.12

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 20

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of P307 transistor:

P307 Equivalent Transistors - Cross-Reference Search

P307 PDF doc:

1.1. bup307.pdf Size:343K _siemens

BUP 307 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 Pin 3 G C E Type VCE IC Package Ordering Code BUP 307 1200V 35A TO-218 AB Q67078-A4201-A2 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k? 1200 Gate-emitter voltage VGE ± 20 DC collector current IC A TC = 25 °C 35 TC = 90 °C 23 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 70 TC = 90 °C 46 Avalanche energy, single pulse EAS mJ IC = 15 A, VCC = 50 V, RGE = 25 ? L = 200 µH, Tj = 25 °C 23 Power dissipation Ptot W TC = 25 °C 310 Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Semiconductor Group 1 Dec-07-1995 BUP 307 Maximum Ratings Parameter Symbol Values Unit DIN humidity category, DIN 40 040 - E - IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56 Thermal Resistance IGBT thermal resis

1.2. bup307d.pdf Size:342K _siemens

BUP 307D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 Pin 3 G C E Type VCE IC Package Ordering Code BUP 307D 1200V 35A TO-218 AB Q67040-A4221-A2 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k? 1200 Gate-emitter voltage VGE ± 20 DC collector current IC A TC = 25 °C 35 TC = 90 °C 23 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 70 TC = 90 °C 46 Diode forward current IF TC = 90 °C 18 Pulsed diode current, tp = 1 ms IFpuls TC = 25 °C 108 Power dissipation Ptot W TC = 25 °C 300 Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Semiconductor Group 1 Dec-02-1996 BUP 307D Maximum Ratings Parameter Symbol Values Unit DIN humidity category, DIN 40 040 - E - IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56

1.3. p307-v_p308_p309.pdf Size:747K _russia

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1.4. kp307_2p307.pdf Size:1165K _russia

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See also transistors datasheet: P29A , P30 , P302 , P303 , P303A , P304 , P306 , P306A , 2SC5200 , P307A , P307B , P307G , P307V , P308 , P309 , P401 , P402 .

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