PE5029
Transistor Datasheet. Parameters and Characteristics. Type Designator: PE5029
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 1
Maximum collector-base voltage |Ucb|, V: 30
Maximum collector-emitter voltage |Uce|, V: 30
Maximum emitter-base voltage |Ueb|, V: 3
Maximum collector current |Ic max|, A: 0.02
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 500M
Collector capacitance (Cc), pF: 0.4
Forward current transfer ratio (hFE), min: 30
Noise Figure, dB: - Package of PE5029
transistor: TO92
PE5029
Equivalent Transistors - Cross-Reference Search PE5029
PDF document for downloads: PDF unavailable! See also transistors datasheet: PBF259S
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. Keywords| PE5029
Datasheet | PE5029
Datenblatt | PE5029
RoHS | PE5029
Distributor | | PE5029
Application Notes | PE5029
Component | PE5029
Circuit | PE5029
Schematic | | PE5029
Equivalent | PE5029
Cross Reference | PE5029
Data Sheet | PE5029
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