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PMBT3904 Transistor Datasheet. Parameters and Characteristics.

Type Designator: PMBT3904

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.31

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 0.2

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 250

Collector capacitance (Cc), pF: 4

Forward current transfer ratio (hFE), min: 50

Noise Figure, dB: -

Package of PMBT3904 transistor: TO236

PMBT3904 Equivalent Transistors - Cross-Reference Search

PMBT3904 PDF doc:

1.1. pmbt3904.pdf Size:144K _philips2

DISCRETE SEMICONDUCTORS DATA SHEET PMBT3904 NPN switching transistor Product data sheet 2004 Jan 12 Supersedes data of 1999 Apr 27 NXP Semiconductors Product data sheet NPN switching transistor PMBT3904 FEATURES QUICK REFERENCE DATA • Collector current capability IC = 200 mA SYMBOL PARAMETER MAX. UNIT • Collector-emitter voltage VCEO = 40 V. VCEO collector-emitter voltage 40 V IC collector current (DC) 200 mA APPLICATIONS • General switching and amplification. PINNING PIN DESCRIPTION DESCRIPTION 1 base NPN switching transistor in a SOT23 plastic package. 2 emitter PNP complement: PMBT3906. 3 collector MARKING TYPE NUMBER MARKING CODE(1) handbook, halfpage 3 3 PMBT3904 *1A 1 Note 1. * = p : Made in Hong Kong. 2 * = t : Made in Malaysia. 1 2 * = W : Made in China. Top view MAM255 Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION PMBT3904 - plastic surface mounted package; 3 lead

1.2. pmbt3904m.pdf Size:84K _philips2

PMBT3904M 40 V, 200 mA NPN switching transistor Rev. 01 — 21 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description NPN single switching transistor in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic package. PNP complement: PMBT3906M. 1.2 Features Single general-purpose switching transistor Board-space reduction Ultra small SMD plastic package 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 40 V IC collector current - - 200 mA hFE DC current gain VCE =1V; 100 180 300 IC =10mA 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 base 3 1 2 emitter 3 2 3 collector 1 Transparent top view 2 sym021 PMBT3904M NXP Semiconductors 40 V, 200 mA NPN switching transistor 3. Ordering information Table 3.

1.3. pmbt3904_3.pdf Size:52K _philips2

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBT3904 NPN switching transistor 1999 Apr 27 Product specification Supersedes data of 1997 May 20 Philips Semiconductors Product specification NPN switching transistor PMBT3904 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 40 V). 1 base 2 emitter APPLICATIONS 3 collector • Telephony and professional communication equipment. DESCRIPTION handbook, halfpage 3 NPN switching transistor in a SOT23 plastic package. 3 PNP complement: PMBT3906. 1 MARKING 2 TYPE NUMBER MARKING CODE(1) 1 2 PMBT3904 ?1A Top view MAM255 Note 1. ? = p : Made in Hong Kong. Fig.1 Simplified outline (SOT23) and symbol. ? = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 60 V VCEO collector-emitter voltage open base - 40 V VEBO emitter-base volta

1.4. pmbt3904vs.pdf Size:86K _philips2

PMBT3904VS 40 V, 200 mA NPN/NPN switching transistor Rev. 01 — 8 July 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP/PNP NPN/PNP complement complement NXP JEITA PMBT3904VS SOT666 - PMBT3906VS PMBT3946VPN 1.2 Features Double general-purpose switching transistor Board-space reduction Ultra small and flat lead SMD plastic package 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VCEO collector-emitter voltage open base - - 40 V IC collector current - - 200 mA hFE DC current gain VCE =1V; 100 180 300 IC =10mA PMBT3904VS NXP Semiconductors 40 V, 200 mA NPN/NPN switching transistor 2. Pinning information Table 3. Pinning Pin Description Simplifie

1.5. pmbt3904d_1.pdf Size:72K _philips2

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PMBT3904D NPN switching double transistor Product specification 1999 Dec 15 Philips Semiconductors Product specification NPN switching double transistor PMBT3904D FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 40 V) 1, 4 emitter TR1; TR2 • Reduces number of components and board space. 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 APPLICATIONS • Telephony and professional communication equipment. 6 5 4 handbook, halfpage 5 4 6 DESCRIPTION Two independently operating NPN switching transistors in TR2 a SC-74, six lead, SMD plastic package. TR1 MARKING 1 2 3 1 2 3 Top view MAM432 TYPE NUMBER MARKING CODE PMBT3904D D1 Fig.1 Simplified outline (SC-74) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor VCBO collector-base voltage open emitter - 60 V VCEO collector-emi

1.6. pmbt3904ys.pdf Size:89K _philips2

PMBT3904YS 40 V, 200 mA NPN/NPN general-purpose double transistor Rev. 01 — 12 May 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose double transistor in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP/PNP NPN/PNP Package complement complement configuration NXP JEITA PMBT3904YS SOT363 SC-88 PMBT3906YS PMBT3946YPN very small 1.2 Features General-purpose double transistor Board-space reduction 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VCEO collector-emitter voltage open base - - 40 V IC collector current - - 200 mA hFE DC current gain VCE =1V; 100 180 300 IC =10mA PMBT3904YS NXP Semiconductors 40 V, 200 mA NPN/NPN general-purpose double transistor 2. Pinning information Table 3. Pinning Pin Description Simpl

See also transistors datasheet: PH2369A , PH2907 , PH2907A , PH5415 , PH5416 , PL1026 , PL1051 , PMBT3903 , 9012 , PMBT3905 , PMBTA05 , PMBTA06 , PMBTA13 , PMBTA14 , PMBTA42 , PMBTA43 , PMBTA55 .

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