PMD1600K Transistor Datasheet. Parameters and Characteristics.

Type Designator: PMD1600K

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 180

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 20

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 10000

Noise Figure, dB: -

Package of PMD1600K transistor: TO3

PMD1600K Equivalent Transistors - Cross-Reference Search

PMD1600K PDF document for downloads:

4.1. pmd1602k.pdf Size:200K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD1602K DESCRIPTION ·High DC current gain ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) ·Complement to type PMD1702K APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current -Continuous 20 A ICP Collector Current-Peak 40 A IBB Base Current 0.5 A PC Collector Power Dissipation@TC=25? 180 W Junction Temperature 150 ? Tj Storage Temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT ThermalResistance, Junction to Case 0.97 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD1602K ELECTRICAL C

4.2. pmd1603k.pdf Size:200K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD1603K DESCRIPTION ·High DC current gain ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 100V(Min) ·Complement to type PMD1703K APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current -Continuous 20 A ICP Collector Current-Peak 40 A IBB Base Current 0.5 A PC Collector Power Dissipation@TC=25? 180 W Junction Temperature 150 ? Tj Storage Temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT ThermalResistance, Junction to Case 0.97 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD1603K ELECTRICA

4.3. pmd1601k.pdf Size:200K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD1601K DESCRIPTION ·High DC current gain ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 60V(Min) ·Complement to type PMD1701K APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current -Continuous 20 A ICP Collector Current-Peak 40 A IBB Base Current 0.5 A PC Collector Power Dissipation@TC=25? 180 W Junction Temperature 150 ? Tj Storage Temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT ThermalResistance, Junction to Case 0.97 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD1601K ELECTRICAL C

See also transistors datasheet: PMD12K40 , PMD12K60 , PMD12K80 , PMD13K100 , PMD13K40 , PMD13K60 , PMD13K80 , PMD15K200 , 2N3904 , PMD1601K , PMD1602K , PMD1603K , PMD16K100 , PMD16K40 , PMD16K60 , PMD16K80 , PMD1700K .

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