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2N508
  2N508
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2N508
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2N508
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List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
2N508 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N508 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N508

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 18

Maximum collector-emitter voltage |Uce|, V: 16

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.2

Maksimalna temperatura (Tj), °C: 100

Transition frequency (ft), MHz: 2

Collector capacitance (Cc), pF: 30

Forward current transfer ratio (hFE), min: 120

Noise Figure, dB: -

Package of 2N508 transistor: TO5

2N508 Equivalent Transistors - Cross-Reference Search

2N508 PDF doc:

1.1. 2n5088_2n5089.pdf Size:281K _motorola

2N508
2N508
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5088/D Amplifier Transistors NPN Silicon 2N5088 2N5089 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29–04, STYLE 1 Rating Symbol 2N508 2N508 Unit TO–92 (TO–226AA) 8 9 Collector–Emitter Voltage VCEO 30 25 Vdc Collector–Base Voltage VCBO 35 30 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA(1) 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(2) V(BR)CEO Vdc (IC =

1.2. 2n5087rev0.pdf Size:300K _motorola

2N508
2N508
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5087/D Amplifier Transistor PNP Silicon 2N5087 COLLECTOR 3 Motorola Preferred Device 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29–04, STYLE 1 Rating Symbol Value Unit TO–92 (TO–226AA) Collector–Emitter Voltage VCEO 50 Vdc Collector–Base Voltage VCBO 50 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) V(BR)CEO 50 — Vdc (IC

1.3. 2n5086_2n5087.pdf Size:434K _motorola

2N508
2N508
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5086/D Amplifier Transistors 2N5086 PNP Silicon * 2N5087 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29–04, STYLE 1 Rating Symbol Value Unit TO–92 (TO–226AA) Collector–Emitter Voltage VCEO 50 Vdc Collector–Base Voltage VCBO 50 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) V(BR)CEO 5

1.4. 2n5087_cnv_2.pdf Size:49K _philips

2N508
2N508
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5087 PNP general purpose transistor Product specification 1997 Jul 02 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP general purpose transistor 2N5087 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 50 V). 1 collector 2 base APPLICATIONS 3 emitter • Low noise stages in audio equipment. 1 handbook, halfpage DESCRIPTION 1 2 3 PNP transistor in a TO-92; SOT54 plastic package 2 NPN complement: 2N5088. 3 MAM280 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter --50 V VCEO collector-emitter voltage open base --50 V ICM peak collector current --200 mA Ptot total power dissipation Tamb ? 25 °C - 500 mW hFE DC current gain IC = -1 mA; VCE = -5 V 250 - fT transition frequency IC = -500

1.5. 2n5088_3.pdf Size:49K _philips

2N508
2N508
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5088 NPN general purpose transistor 1997 Sep 03 Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN general purpose transistor 2N5088 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 30 V). 1 collector 2 base APPLICATIONS 3 emitter • Low noise stages in audio equipment. 1 handbook, halfpage 1 DESCRIPTION 2 3 NPN transistor in a TO-92; SOT54 plastic package. 2 PNP complement: 2N5087. 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 35 V VCEO collector-emitter voltage open base - 30 V ICM peak collector current - 200 mA Ptot total power dissipation Tamb ? 25 °C - 500 mW hFE DC current gain IC = 1 mA; VCE = 5 V 350 - fT transition frequency IC = 500 µA

1.6. 2n5088_mmbt5088_2n5089_mmbt5089.pdf Size:97K _fairchild_semi

2N508
2N508
2N5088 MMBT5088 2N5089 MMBT5089 C E C TO-92 B B SOT-23 E Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 2N5088 30 V 2N5089 25 V VCBO Collector-Base Voltage 2N5088 35 V 2N5089 30 V VEBO Emitter-Base Voltage 4.5 V IC Collector Current - Continuous 100 mA Operating and Storage Junction Temperature Range -55 to +150 TJ, Tstg °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteri

1.7. 2n5086_2n5087_mmbt5087.pdf Size:100K _fairchild_semi

2N508
2N508
2N5086/2N5087/MMBT5087 PNP General Purpose Amplifier 3 • This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA. 2 SOT-23 TO-92 1 Mark: 2Q 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -50 V VCBO Collector-Base Voltage -50 V VEBO Emitter-Base Voltage -3.0 V IC Collector current - Continuous -100 mA TJ, Tstg Junction and Storage Temperature -55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test

1.8. 2n5088-2n5089.pdf Size:58K _samsung

2N508
2N508
2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 2N5088: 30V 2N5089: 25V • Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage :2N5088 VCBO 2N5089 30 V Collector-Emitter Voltage :2N5088 VCEO 30 V 2N5089 25 V Emitter-Base Voltage VEBO 4.5 V Collector Current IC 50 mA Collector Dissipation PC 625 mW Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1.Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC=100 , IE=0 :2N5088 35 V :2N5089 V 30 Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 V :2N5088 30 V :2N5089 25 Collector Cut-off Current ICBO nA :2N4403 VCB=20V, IE=0 50 :2N4402 VCB=15V, IE=0 nA 5 Base Cut-off Current IEBO VBE=3V, IC=0 nA 50 VBE=4.5V, IC=0 nA 100 DC Cur

1.9. 2n5088_2n5089.pdf Size:66K _central

2N508
2N508
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.10. 2n5086_2n5087.pdf Size:60K _central

2N508
2N508
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.11. 2n5088_2n5089.pdf Size:83K _onsemi

2N508
2N508
2N5088, 2N5089 Amplifier Transistors NPN Silicon Features http://onsemi.com • Pb-Free Packages are Available* 3 COLLECTOR 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc 1 EMITTER 2N5088 30 2N5089 25 Collector - Base Voltage VCBO Vdc 2N5088 35 TO-92 2N5089 30 CASE 29 Emitter - Base Voltage VEBO 3.0 Vdc STYLE 1 Collector Current - Continuous IC 50 mAdc 1 1 2 2 Total Device Dissipation @ TA = 25°C PD 625 mW 3 3 Derate above 25°C 5.0 mW/°C STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL Total Device Dissipation @ TC = 25°C PD 1.5 W AMMO PACK Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg -55 to +150 °C MARKING DIAGRAM Temperature Range THERMAL CHARACTERISTICS 2N Characteristic Symbol Max Unit 508x AYWW G Thermal Resistance, Junction-to-Ambient RqJA 200 °C/W G (Note 1) Thermal Resistance, Junction-to-Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum x =

1.12. 2n5087-d.pdf Size:155K _onsemi

2N508
2N508
2N5087 Preferred Device Amplifier Transistor PNP Silicon Features • Pb-Free Packages are Available* http://onsemi.com 3 COLLECTOR MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 Vdc 1 EMITTER Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Collector Current - Continuous IC 50 mAdc TO-92 Total Device Dissipation @ TA = 25°C PD 625 mW CASE 29 Derate above 25°C 5.0 mW/°C STYLE 1 Total Device Dissipation @ TC = 25°C PD 1.5 W 1 Derate above 25°C 12 mW/°C 1 2 2 3 3 Operating and Storage Junction TJ, Tstg -55 to +150 °C STRAIGHT LEAD BENT LEAD Temperature Range BULK PACK TAPE & REEL AMMO PACK THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MARKING DIAGRAM Thermal Resistance, Junction-to-Ambient RqJA 200 °C/W Thermal Resistance, Junction-to-Case RqJC 83.3 °C/W 2N Stresses exceeding Maximum Ratings may damage the device. Maximum 5087 Ratings are stress ratings only. Functional operation above

1.13. 2n5088_89.pdf Size:214K _cdil

2N508
2N508
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS 2N5088 2N5089 TO-92 CBE C B E Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 UNITS Collector -Base Voltage VCBO 35 30 V Collector -Emitter Voltage VCE0 30 25 V Emitter -Base Voltage VEBO 4.5 V Collector Current- Continuous IC 50 mA Power Dissipation@ Ta=25 deg C PD 625 mW Derate Above 25 deg C 5.0 mW/deg C Power Dissipation@ Tc=25 deg C PD 1.5 W Derate Above 25 deg C 12 mW/deg C Junction Temperature Tj 150 deg C Storage Temperature Tstg -55 to +150 deg C THERMAL RESISTANCE Junction to Ambient Rth(j-a) (1) 357 deg C/W Junction to Case Rth(j-c) 125 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL Min Max UNITS Collector -Emitter Voltage VCEO* IC=1mA, IB=0 2N5088 30 - V 2N5089 25 - V Collector -Base Voltage VCBO IC=100uA,IE=0 2N5088 35 - V 2N5089 30 - V Coll

1.14. h2n5087.pdf Size:49K _hsmc

2N508
2N508
Spec. No. : HE6210 HI-SINCERITY Issued Date : 1998.02.01 Revised Date : 2005.01.20 MICROELECTRONICS CORP. Page No. : 1/5 H2N5087 PNP EPITAXIAL PLANAR TRANSISTOR Description This device was designed for low noise,high gain,general purpose amplifier applications for 1uA to 25mA collector current. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ........................................................

See also transistors datasheet: 2N5071 , 2N5072 , 2N5073 , 2N5074 , 2N5075 , 2N5076 , 2N5077 , 2N5079 , KT829A , 2N5080 , 2N5081 , 2N5082 , 2N5083 , 2N5084 , 2N5085 , 2N5086 , 2N5087 .

Keywords

 2N508 Datasheet  2N508 Datenblatt  2N508 RoHS  2N508 Distributor
 2N508 Application Notes  2N508 Component  2N508 Circuit  2N508 Schematic
 2N508 Equivalent  2N508 Cross Reference  2N508 Data Sheet  2N508 Fiche Technique

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