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2N508
  2N508
  2N508
  2N508
 
2N508
  2N508
  2N508
  2N508
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586G
2SA1586O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229O .. 2SC2434
2SC2435 .. 2SC2668Y
2SC2669 .. 2SC2859O
2SC2859Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC400M
2SC400O .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC507R
2SC507Y .. 2SC536SP
2SC537 .. 2SC5813
2SC5819 .. 2SC690
2SC690M .. 2SC89H
2SC90 .. 2SD1063S
2SD1064 .. 2SD1252
2SD1252A .. 2SD1442
2SD1442A .. 2SD1662
2SD1663 .. 2SD1848
2SD1849 .. 2SD2095
2SD2096 .. 2SD2439O
2SD2439P .. 2SD362R
2SD363 .. 2SD588A
2SD589 .. 2SD786
2SD787 .. 2STA2510
2STC2510 .. 40221
40222 .. 40630
40631 .. A177
A178 .. AC556K
AC558 .. AF129
AF130 .. ASY70
ASY70IV .. BC149B
BC149C .. BC237B-92
BC237BP .. BC337-25
BC337-40 .. BC477QF
BC477VI .. BC807-25
BC807-25L .. BC858CLT1
BC858CR .. BCV63
BCV63B .. BCW94K
BCW94KA .. BCY65EPA
BCY65EPB .. BD226-16
BD226-6 .. BD370B-16
BD370B-25 .. BD590
BD591 .. BD940F
BD941 .. BDV93
BDV94 .. BDX85A
BDX85B .. BF225JF
BF226 .. BF422
BF422A .. BF847
BF848 .. BFQ268
BFQ27 .. BFS33P
BFS34 .. BFV88
BFV88A .. BFY69V
BFY69W .. BLX88
BLX89 .. BSS72
BSS72S .. BSX46-6
BSX47 .. BTB1580L3
BTB1580M3 .. BU1508AX
BU1508DX .. BUD48A
BUD48AI .. BUS12B
BUS13 .. BUW46
BUW48 .. BUY64
BUY65 .. CD5918
CD5919 .. CI3397
CI3402 .. CL066P
CL100 .. CPH5517
CPH5518 .. CSA733
CSA733K .. CSC2274D
CSC2274E .. CT764
CT765 .. D29A4
D29A5 .. D41E2
D41E3 .. D62T6560
D62T7030 .. DT1311
DT1312 .. DTB143EC
DTB143EK .. DTL1654
DTL1655 .. ECG228A
ECG229 .. ED1401C
ED1401D .. ESM738T
ESM749 .. FE1718D
FE1718E .. FMA7A
FMA8A .. FN1F4N
FN1F4Z .. FXT3906SM
FXT449 .. GD362
GD363 .. GES929
GES93 .. GS9018
GS9018D .. GT402B
GT402D .. HEPS0015
HEPS0016 .. HSB649A
HSB649T .. IMBT3904
IMBT3905 .. JE9143A
JE9143B .. KRA111M
KRA111S .. KRC104
KRC104M .. KRC853F
KRC853U .. KSB1366
KSB1366G .. KSC3125
KSC3158 .. KSD569O
KSD569R .. KT203A
KT203AM .. KT336G
KT336V .. KT630G
KT630V .. KT815B9
KT815G .. KT9115A
KT9116A .. KTC1020
KTC1026 .. KTN2369
KTN2369A .. MCH4017
MCH4020 .. MJ11017
MJ11018 .. MJD50TF
MJD5731 .. MJE701T
MJE702 .. MMBC1623L3
MMBC1623L4 .. MMBT8599
MMBT9012 .. MP1530
MP1530A .. MP5142
MP5143 .. MPS3405
MPS3414 .. MPSL01
MPSL01A .. MSB1218ART1
MSB709 .. NA12HY
NA21E .. NB014EY
NB014EZ .. NB212Z
NB212ZG .. NKT142
NKT143 .. NPS5816
NPS5855 .. NTE2332
NTE2334 .. OC82DM
OC83 .. PBSS5350SS
PBSS5350T .. PMBT3905
PMBT3906 .. PT3151A
PT3501 .. RCA1B04
RCA1B05 .. RN1703
RN1703JE .. RN2902FE
RN2902FS .. S1807
S1808 .. SDT9308
SDT9309 .. SK1641
SK2604A .. SRA2219UF
SRC1201 .. STC5649
STC5650 .. SZD5564
SZD5706 .. TA2606
TA2616 .. TIP146T
TIP147 .. TIS51
TIS52 .. TN4140
TN4141 .. TPC6504
TPC6601 .. UN1115Q
UN1115R .. UN921K
UN921L .. ZT60
ZT600 .. ZTX451
ZTX452 .. ZXTP749F
ZXTPS717MC .. ZXTPS720MC
 
2N508 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N508 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N508

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 18

Maximum collector-emitter voltage |Uce|, V: 16

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.2

Maksimalna temperatura (Tj), °C: 100

Transition frequency (ft), MHz: 2

Collector capacitance (Cc), pF: 30

Forward current transfer ratio (hFE), min: 120

Noise Figure, dB: -

Package of 2N508 transistor: TO5

2N508 Equivalent Transistors - Cross-Reference Search

2N508 PDF doc:

1.1. 2n5087rev0.pdf Size:300K _motorola

2N508
2N508
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5087/D Amplifier Transistor PNP Silicon 2N5087 COLLECTOR 3 Motorola Preferred Device 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29–04, STYLE 1 Rating Symbol Value Unit TO–92 (TO–226AA) Collector–Emitter Voltage VCEO 50 Vdc Collector–Base Voltage VCBO 50 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) V(BR)CEO 50 — Vdc (IC

1.2. 2n5086_2n5087.pdf Size:434K _motorola

2N508
2N508
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5086/D Amplifier Transistors 2N5086 PNP Silicon * 2N5087 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29–04, STYLE 1 Rating Symbol Value Unit TO–92 (TO–226AA) Collector–Emitter Voltage VCEO 50 Vdc Collector–Base Voltage VCBO 50 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) V(BR)CEO 5

1.3. 2n5088_2n5089.pdf Size:281K _motorola

2N508
2N508
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5088/D Amplifier Transistors NPN Silicon 2N5088 2N5089 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29–04, STYLE 1 Rating Symbol 2N508 2N508 Unit TO–92 (TO–226AA) 8 9 Collector–Emitter Voltage VCEO 30 25 Vdc Collector–Base Voltage VCBO 35 30 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA(1) 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(2) V(BR)CEO Vdc (IC =

1.4. 2n5088_3.pdf Size:49K _philips

2N508
2N508
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5088 NPN general purpose transistor 1997 Sep 03 Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN general purpose transistor 2N5088 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 30 V). 1 collector 2 base APPLICATIONS 3 emitter • Low noise stages in audio equipment. 1 handbook, halfpage 1 DESCRIPTION 2 3 NPN transistor in a TO-92; SOT54 plastic package. 2 PNP complement: 2N5087. 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 35 V VCEO collector-emitter voltage open base - 30 V ICM peak collector current - 200 mA Ptot total power dissipation Tamb ? 25 °C - 500 mW hFE DC current gain IC = 1 mA; VCE = 5 V 350 - fT transition frequency IC = 500 µA

1.5. 2n5087_cnv_2.pdf Size:49K _philips

2N508
2N508
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5087 PNP general purpose transistor Product specification 1997 Jul 02 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP general purpose transistor 2N5087 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 50 V). 1 collector 2 base APPLICATIONS 3 emitter • Low noise stages in audio equipment. 1 handbook, halfpage DESCRIPTION 1 2 3 PNP transistor in a TO-92; SOT54 plastic package 2 NPN complement: 2N5088. 3 MAM280 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter --50 V VCEO collector-emitter voltage open base --50 V ICM peak collector current --200 mA Ptot total power dissipation Tamb ? 25 °C - 500 mW hFE DC current gain IC = -1 mA; VCE = -5 V 250 - fT transition frequency IC = -500

1.6. 2n5086_2n5087_mmbt5087.pdf Size:100K _fairchild_semi

2N508
2N508
2N5086/2N5087/MMBT5087 PNP General Purpose Amplifier 3 • This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA. 2 SOT-23 TO-92 1 Mark: 2Q 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -50 V VCBO Collector-Base Voltage -50 V VEBO Emitter-Base Voltage -3.0 V IC Collector current - Continuous -100 mA TJ, Tstg Junction and Storage Temperature -55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test

1.7. 2n5088_mmbt5088_2n5089_mmbt5089.pdf Size:97K _fairchild_semi

2N508
2N508
2N5088 MMBT5088 2N5089 MMBT5089 C E C TO-92 B B SOT-23 E Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 2N5088 30 V 2N5089 25 V VCBO Collector-Base Voltage 2N5088 35 V 2N5089 30 V VEBO Emitter-Base Voltage 4.5 V IC Collector Current - Continuous 100 mA Operating and Storage Junction Temperature Range -55 to +150 TJ, Tstg °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteri

1.8. 2n5088-2n5089.pdf Size:58K _samsung

2N508
2N508
2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 2N5088: 30V 2N5089: 25V • Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage :2N5088 VCBO 2N5089 30 V Collector-Emitter Voltage :2N5088 VCEO 30 V 2N5089 25 V Emitter-Base Voltage VEBO 4.5 V Collector Current IC 50 mA Collector Dissipation PC 625 mW Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1.Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC=100 , IE=0 :2N5088 35 V :2N5089 V 30 Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 V :2N5088 30 V :2N5089 25 Collector Cut-off Current ICBO nA :2N4403 VCB=20V, IE=0 50 :2N4402 VCB=15V, IE=0 nA 5 Base Cut-off Current IEBO VBE=3V, IC=0 nA 50 VBE=4.5V, IC=0 nA 100 DC Cur

1.9. 2n5086_2n5087.pdf Size:60K _central

2N508
2N508
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.10. 2n5088_2n5089.pdf Size:66K _central

2N508
2N508
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.11. 2n5087-d.pdf Size:155K _onsemi

2N508
2N508
2N5087 Preferred Device Amplifier Transistor PNP Silicon Features • Pb-Free Packages are Available* http://onsemi.com 3 COLLECTOR MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 Vdc 1 EMITTER Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Collector Current - Continuous IC 50 mAdc TO-92 Total Device Dissipation @ TA = 25°C PD 625 mW CASE 29 Derate above 25°C 5.0 mW/°C STYLE 1 Total Device Dissipation @ TC = 25°C PD 1.5 W 1 Derate above 25°C 12 mW/°C 1 2 2 3 3 Operating and Storage Junction TJ, Tstg -55 to +150 °C STRAIGHT LEAD BENT LEAD Temperature Range BULK PACK TAPE & REEL AMMO PACK THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MARKING DIAGRAM Thermal Resistance, Junction-to-Ambient RqJA 200 °C/W Thermal Resistance, Junction-to-Case RqJC 83.3 °C/W 2N Stresses exceeding Maximum Ratings may damage the device. Maximum 5087 Ratings are stress ratings only. Functional operation above

1.12. 2n5088_2n5089.pdf Size:83K _onsemi

2N508
2N508
2N5088, 2N5089 Amplifier Transistors NPN Silicon Features http://onsemi.com • Pb-Free Packages are Available* 3 COLLECTOR 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc 1 EMITTER 2N5088 30 2N5089 25 Collector - Base Voltage VCBO Vdc 2N5088 35 TO-92 2N5089 30 CASE 29 Emitter - Base Voltage VEBO 3.0 Vdc STYLE 1 Collector Current - Continuous IC 50 mAdc 1 1 2 2 Total Device Dissipation @ TA = 25°C PD 625 mW 3 3 Derate above 25°C 5.0 mW/°C STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL Total Device Dissipation @ TC = 25°C PD 1.5 W AMMO PACK Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg -55 to +150 °C MARKING DIAGRAM Temperature Range THERMAL CHARACTERISTICS 2N Characteristic Symbol Max Unit 508x AYWW G Thermal Resistance, Junction-to-Ambient RqJA 200 °C/W G (Note 1) Thermal Resistance, Junction-to-Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum x =

1.13. 2n5088_89.pdf Size:214K _cdil

2N508
2N508
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS 2N5088 2N5089 TO-92 CBE C B E Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 UNITS Collector -Base Voltage VCBO 35 30 V Collector -Emitter Voltage VCE0 30 25 V Emitter -Base Voltage VEBO 4.5 V Collector Current- Continuous IC 50 mA Power Dissipation@ Ta=25 deg C PD 625 mW Derate Above 25 deg C 5.0 mW/deg C Power Dissipation@ Tc=25 deg C PD 1.5 W Derate Above 25 deg C 12 mW/deg C Junction Temperature Tj 150 deg C Storage Temperature Tstg -55 to +150 deg C THERMAL RESISTANCE Junction to Ambient Rth(j-a) (1) 357 deg C/W Junction to Case Rth(j-c) 125 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL Min Max UNITS Collector -Emitter Voltage VCEO* IC=1mA, IB=0 2N5088 30 - V 2N5089 25 - V Collector -Base Voltage VCBO IC=100uA,IE=0 2N5088 35 - V 2N5089 30 - V Coll

1.14. h2n5087.pdf Size:49K _hsmc

2N508
2N508
Spec. No. : HE6210 HI-SINCERITY Issued Date : 1998.02.01 Revised Date : 2005.01.20 MICROELECTRONICS CORP. Page No. : 1/5 H2N5087 PNP EPITAXIAL PLANAR TRANSISTOR Description This device was designed for low noise,high gain,general purpose amplifier applications for 1uA to 25mA collector current. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ........................................................

See also transistors datasheet: 2N5071 , 2N5072 , 2N5073 , 2N5074 , 2N5075 , 2N5076 , 2N5077 , 2N5079 , KT829A , 2N5080 , 2N5081 , 2N5082 , 2N5083 , 2N5084 , 2N5085 , 2N5086 , 2N5087 .

Keywords

 2N508 Datasheet  2N508 Datenblatt  2N508 RoHS  2N508 Distributor
 2N508 Application Notes  2N508 Component  2N508 Circuit  2N508 Schematic
 2N508 Equivalent  2N508 Cross Reference  2N508 Data Sheet  2N508 Fiche Technique

 

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