PN3564 Transistor Datasheet. Parameters and Characteristics.

Type Designator: PN3564

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.31

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 15

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 400

Collector capacitance (Cc), pF: 3.5

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of PN3564 transistor: TO92

PN3564 Equivalent Transistors - Cross-Reference Search

PN3564 PDF document for downloads:

5.1. pn3565.pdf Size:293K _fairchild_semi

Discrete POWER & Signal Technologies PN3565 C TO-92 B E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V V Collector-Base Voltage 30 V CBO VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 500 mA -55 to +150 TJ, Tstg Operating and Storage Junction Temperature Range °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units

5.2. pn3566.pdf Size:26K _fairchild_semi

PN3566 NPN General Purpose Amplifier • This device is for use as a medium amplifier and switch requiring collector currents up 300mA. • Sourced from process 19. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current - Continuous 600 mA TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 30mA, IB = 0 30 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100µA, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 5 V ICBO Collector Cut-off Current VCB = 20V, IE = 0 50 nA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 µA On Characteristics hFE DC Current Gain VC

5.3. pn3569.pdf Size:26K _fairchild_semi

5.4. pn3567.pdf Size:26K _fairchild_semi

PN3567 NPN General Purpose Amplifier • This device is for use as a medium amplifier and switch requiring collector currents up 300mA. • Sourced from process 19. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current - Continuous 600 mA TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 30mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100µA, IE = 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 5 V ICBO Collector Cut-off Current VCB = 40V, IE = 0 50 nA VCB = 40V, IE = 0, TA = 75°C 5 µA IEBO Emitter Cut-off Current VEB = 4V, IC = 0 25 nA On Char

5.5. pn3563.pdf Size:528K _fairchild_semi

PN3563 C TO-92 B E NPN RF Amplifier This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 2.0 V IC Collector Current - Continuous 50 mA Operating and Storage Junction Temperature Range -55 to +150 C TJ, Tstg ° *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units PN3563 PD Total Device Dissipation

5.6. pn3568.pdf Size:27K _fairchild_semi

Discrete POWER & Signal Technologies PN3568 C TO-92 B E NPN General Purpose Amplifier This device is designed for general purpose, medium power amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. SeeTN3019A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 60 V V Collector-Base Voltage 80 V CBO VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.0 A -55 to +150 TJ, Tstg Operating and Storage Junction Temperature Range °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max

5.7. 2n3567_2n3568_2n3569_pn3567_pn3568_pn3569.pdf Size:64K _central

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5.8. pn3569.pdf Size:75K _microelectronics

See also transistors datasheet: PN3403 , PN3404 , PN3405 , PN3414 , PN3415 , PN3416 , PN3417 , PN3563 , BC547 , PN3565 , PN3566 , PN3567 , PN3568 , PN3569 , PN3638 , PN3638A , PN3639 .

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