PTB20060
Transistor Datasheet. Parameters and Characteristics. Type Designator: PTB20060
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 330
Maximum collector-base voltage |Ucb|, V: 60
Maximum collector-emitter voltage |Uce|, V: 40
Maximum emitter-base voltage |Ueb|, V: 4
Maximum collector current |Ic max|, A: 25
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 930
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 20
Noise Figure, dB: - Package of PTB20060
transistor: 20207
PTB20060
Equivalent Transistors - Cross-Reference Search PTB20060
PDF document for downloads: PDF unavailable! See also transistors datasheet: PTB20030
, PTB20031
, PTB20038
, PTB20046
, PTB20050
, PTB20051
, PTB20052
, PTB20053
, BC547C
, PTB20062
, PTB20071
, PTB20074
, PTB20077
, PTB20078
, PTB20081
, PTB20082
, PTB20091
. Keywords| PTB20060
Datasheet | PTB20060
Datenblatt | PTB20060
RoHS | PTB20060
Distributor | | PTB20060
Application Notes | PTB20060
Component | PTB20060
Circuit | PTB20060
Schematic | | PTB20060
Equivalent | PTB20060
Cross Reference | PTB20060
Data Sheet | PTB20060
Fiche Technique |
|
