PTB20148 Transistor Datasheet. Parameters and Characteristics.

Type Designator: PTB20148

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 145

Maximum collector-base voltage |Ucb|, V: 65

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 8

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 925

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of PTB20148 transistor: M169

PTB20148 Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: PTB20125 , PTB20134 , PTB20135 , PTB20141 , PTB20144 , PTB20145 , PTB20146 , PTB20147 , BC107 , PTB20151 , PTB20152 , PTB20156 , PTB20157 , PTB20159 , PTB20162 , PTB20165 , PTB20166 .

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