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2N5109 Transistor (IC) Datasheet. Cross Reference Search. 2N5109 Equivalent

Type Designator: 2N5109

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 2.5

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 20

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 0.4

Maksimalna temperatura (Tj), °C: 200

Transition frequency (ft), MHz: 1200

Collector capacitance (Cc), pF: 3.5

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of 2N5109 transistor: TO39

2N5109 Transistor Equivalent Substitute - Cross-Reference Search

 

2N5109 PDF:

1.1. 2n5109.pdf Size:488K _central

2N5109
2N5109

2N5109 www.centralsemi.com SILICON DESCRIPTION: NPN RF TRANSISTOR The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL UNITS Collector-Base Voltage VCBO 40 V Collector

1.2. 2n5109.pdf Size:47K _semicoa

2N5109
2N5109

Data Sheet No. 2N5109 Generic Part Number: Type 2N5109 2N5109 Geometry 1007 Polarity NPN REF: MIL-PRF-19500/453 Qual Level: JAN - JANTXV Features: • VHF-UHF amplifier silicon transis- tor. • Housed in TO-39 case. • Also available in chip form using the 1007 chip geometry. • The Min and Max limits shown are per MIL-PRF-19500/398 which TO-39 Semicoa meets in all cases. Maximum Rati

5.1. 2n5108.pdf Size:28K _advanced-semi

2N5109
2N5109

2N5108 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N5108 is a Designed for General Purpose Class C Amplifier Applications Up to 1 GHz. PACKAGE STYLE TO-39 FEATURES: • GPE = 6.0 dB Typ. at 1.0 GHz • FT = 1,500 MHz Typ. at 15 V/ 50 mA • Hermetic TO-39 Package MAXIMUM RATINGS IC 400 mA VCB 55 V VCE 30 V PDISS 3.5 W @ TC = 25 OC TJ -65 to +200 OC 1 = Emitter 2 = Base

5.2. 2n5108.pdf Size:29K _inchange_semiconductor

2N5109
2N5109

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5108 DESCRIPTION ·High Current-Gain Bandwidth Product : fT= 1200MHz (Min) @VCE = 10V,IE = 50mA ·Low Saturation Voltage ·Good Linearity of hFE APPLICATIONS ·Designed for general purpose Class C amplifier applications up to 1 GHz ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNI

See also transistors datasheet: 2N51 , 2N5100 , 2N5101 , 2N5102 , 2N5106 , 2N5107 , 2N5108 , 2N5108A , TIP31 , 2N5109A , 2N5109B , 2N5109UB , 2N511 , 2N5110 , 2N5111 , 2N5112 , 2N5113 .

Search Terms:

 2N5109 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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