S2000AF Transistor Datasheet. Parameters and Characteristics.

Type Designator: S2000AF

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 50

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 1500

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 8

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF: 125

Forward current transfer ratio (hFE), min: 2.2

Noise Figure, dB: -

Package of S2000AF transistor: ISO218

S2000AF Equivalent Transistors - Cross-Reference Search

S2000AF PDF document for downloads:

1.1. s2000af.pdf Size:216K _st

S2000AF High voltage NPN power transistor for standard definition CRT display Features ¦ State-of-the-art technology: – Diffused collector “Enhanced generation” ¦ Stable performances versus operating temperature variation ¦ Low base-drive requirement 3 2 ¦ Tigh hFE range at operating collector current 1 ¦ High ruggedness ISOWATT218FX ¦ Fully insulated power package U.L. compliant Applications ¦ Horizontal deflection output for CRT TV Figure 1. Internal schematic diagram ¦ Switch mode power supplies for CRT TV Description The S2000AF is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure for updated performance to the horizontal deflection stage. Table 1. Device summary Order code Marking Package Packaging S2000AF S2000AF ISOWATT218FX Tube August 2007 Rev 2 1/11 www.st.com 11 Content S2000AF Content 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.2. s2000afi.pdf Size:117K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000AFI DESCRIPTION Ў¤ With TO-3P(H)IS package Ў¤ High voltage Ў¤ Fast switching APPLICATIONS Ў¤ Horizontal deflection for color TV PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Ў¤ Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg Collector-base voltage PARAMETER CHA IN Collector current Collector-emitter voltage Emitter-base voltage ES NG Open emitter Open base MIC E CONDITIONS OND TOR UC VALUE 1500 700 10 8 15 UNIT V V V A A W Ўж Ўж Open collector Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25Ўж 50 150 -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 2.5 UNIT Ўж /W

1.3. s2000af.pdf Size:117K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000AF DESCRIPTION Ў¤ With TO-3P(H)IS package Ў¤ High voltage Ў¤ Fast switching APPLICATIONS Ў¤ Horizontal deflection for color TV PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Ў¤ Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg Collector-base voltage PARAMETER CHA IN Collector current Collector-emitter voltage Emitter-base voltage ES NG Open emitter Open base MIC E CONDITIONS OND TOR UC VALUE 1500 700 10 8 15 UNIT V V V A A W Ўж Ўж Open collector Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25Ўж 50 150 -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 2.5 UNIT Ўж /W

See also transistors datasheet: S1839 , S1840 , S1864 , S1891 , S1954 , S1955 , S2000 , S2000A , 2N4403 , S2000F , S2054 , S2055 , S2055A , S2055AF , S2055F , S2056 , S2121 .

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