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SC157 Transistor Datasheet. Parameters and Characteristics.

Type Designator: SC157

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.25

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 125

Transition frequency (ft), MHz: 75

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 75

Noise Figure, dB: -

Package of SC157 transistor: X13

SC157 Equivalent Transistors - Cross-Reference Search

SC157 PDF document for downloads:

1.1. 2sc1571l.pdf Size:747K _sanyo

1.2. 2sc1573.pdf Size:47K _panasonic

Transistor 2SC1573, 2SC1573A, 2SC1573B Silicon NPN triple diffusion planer type For high breakdown voltage general amplification Unit: mm For small TV video output 5.9± 0.2 4.9± 0.2 Complementary to 2SC1573 and 2SA879 Features High collector to emitter voltage VCEO. High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) 0.7± 0.1 Parameter Symbol Ratings Unit 2.54± 0.15 2SC1573 250 Collector to 2SC1573A VCBO 300 V base voltage 2SC1573B 400 2SC1573 200 Collector to +0.2 +0.2 0.45–0.1 0.45–0.1 2SC1573A VCEO 300 V 1.27 1.27 emitter voltage 2SC1573B 400 1:Emitter 2:Collector Emitter to base voltage VEBO 7 V 1 2 3 3:Base Peak collector current ICP 100 mA EIAJ:SC–51 TO–92L Package Collector current IC 70 mA Collector power dissipation PC 1 W Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 12V, IE = 0 2 µ

1.3. 2sc1573_e.pdf Size:51K _panasonic

Transistor 2SC1573, 2SC1573A, 2SC1573B Silicon NPN triple diffusion planer type For high breakdown voltage general amplification Unit: mm For small TV video output 5.9± 0.2 4.9± 0.2 Complementary to 2SC1573 and 2SA879 Features High collector to emitter voltage VCEO. High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) 0.7± 0.1 Parameter Symbol Ratings Unit 2.54± 0.15 2SC1573 250 Collector to 2SC1573A VCBO 300 V base voltage 2SC1573B 400 2SC1573 200 Collector to +0.2 +0.2 0.45–0.1 0.45–0.1 2SC1573A VCEO 300 V 1.27 1.27 emitter voltage 2SC1573B 400 1:Emitter 2:Collector Emitter to base voltage VEBO 7 V 1 2 3 3:Base Peak collector current ICP 100 mA EIAJ:SC–51 TO–92L Package Collector current IC 70 mA Collector power dissipation PC 1 W Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 12V, IE = 0 2 µ

1.4. 2sc1576.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1576 DESCRIPTION ·With TO-3 package ·High voltage,high speed APPLICATIONS ·For high voltage ,fast switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 450 V VCEO Collector-emitter voltage Open base 330 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 8 A PT Total power dissipation TC?25? 100 W Tj Junction temperature 200 ? Tstg Storage temperature -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance from junction to case 1.25 ?/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1576 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE

1.5. 2sc1579.pdf Size:129K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1579 DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A ICM Collector current-Peak 30 A PT Total power dissipation TC=25? 150 W Tj Junction temperature 200 ? Tstg Storage temperature -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-mb Thermal resistance from junction to mounting base 1.0 ?/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1579 CHARACTERISTICS Tj=25? unless otherwise sp

1.6. 2sc1577.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1577 DESCRIPTION ·With TO-3 package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 8 A PC Collector power dissipation TC=25? 80 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1577 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 400 V V(BR)EBO Emitter-base brea

See also transistors datasheet: SC147B , SC148 , SC148A , SC148B , SC148C , SC149 , SC149B , SC149C , KD502 , SC157A , SC157VI , SC158 , SC158A , SC158B , SC158VI , SC159 , SC159A .

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