SC259B Transistor Datasheet. Parameters and Characteristics.

Type Designator: SC259B

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.25

Maximum collector-base voltage |Ucb|, V: 25

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 125

Transition frequency (ft), MHz: 75

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 240

Noise Figure, dB: -

Package of SC259B transistor: X13

SC259B Equivalent Transistors - Cross-Reference Search

SC259B PDF document for downloads:

5.1. 2sc2594.pdf Size:83K _panasonic

5.2. 2sc2590.pdf Size:80K _panasonic

Power Transistors 2SC2590 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 8.0+0.5 –0.1 3.2±0.2 ? 3.16±0.1 ¦ Features • Excellent collector current IC characteristics of forward current transfer ratio hFE • High transition frequency fT • TO-126B package which requires no insulation plate for installa- tion to the heat sink ¦ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit 0.75±0.1 0.5±0.1 0.5±0.1 1.76±0.1 Collector-base voltage (Emitter open) VCBO 120 V 4.6±0.2 2.3±0.2 Collector-emitter voltage (Base open) VCEO 120 V 1: Emitter 1 2 3 2: Collector Emitter-base voltage (Collector open) VEBO 5 V 3: Base Collector current IC 0.5 A TO-126B-A1 Package Peak collector current ICP 1.0 A Collector power dissipation PC 1.2 W Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C ¦ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base

5.3. 2sc2591.pdf Size:62K _no

5.4. 2sc2594.pdf Size:113K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2594 DESCRIPTION · ·With TO-126 package ·Low saturation voltage APPLICATIONS ·AF power amplifier ·For electronic flash unit ·Converter PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base ABSOLUTE MAXIMUM RATINGS (TC=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 40 V VCEO Collector-emitter voltage Open base 20 V VEBO Emitter-base voltage Open collector 7 V IC Collector current -DC 5 A ICM Collector current-Peak 7 A PC Collector power dissipation TC=25? 10 W Junction temperature 150 ? Tj Storage temperature -55~150 ? Tstg Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2594 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=1mA IB=0 20 V V(BR)CBO Collector-ba

5.5. 2sc2590.pdf Size:147K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2SA1110 Ў¤ Excellent current IC characteristics of forward current transfer ratio hFE vs. collector Ў¤ High transition frequency fT Ў¤ Optimum for the driver stage of a 40 W to 60 W output amplifier APPLICATIONS Ў¤ For low-frequency power amplification PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION 2SC2590 Ў¤ Absolute Maximun Ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER CHA IN Collector-base voltage E SEM NG Open base OND IC CONDITIONS TOR UC VALUE 120 120 5 0.5 1.0 UNIT V V V A A W Ўж Ўж Open emitter Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Collector power dissipation Junction temperature Storage temperature Open collector TC=25Ўж 1.2* 150 -55~150 Note) *: Withou

5.6. 2sc2591_2sc2592.pdf Size:166K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2591 2SC2592 DESCRIPTION Ў¤ With TO-220 package Ў¤ Complement to type 2SA1111/1112 Ў¤ Good linearity of hFE Ў¤ High VCEO APPLICATIONS Ў¤ For audio frequency, high power amplifiers application PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETER VCBO INC Collector-base voltage E SEM ANG H 2SC2591 2SC2592 2SC2591 2SC2592 OND IC CONDITIONS TOR UC VALUE 150 V 180 150 UNIT Open emitter VCEO Collector-emitter voltage Open base 180 Open collector 5 1 1.5 TC=25Ўж 20 150 -55~150 Ўж Ўж V VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature V A A W

See also transistors datasheet: SC257A , SC257VI , SC258 , SC258A , SC258B , SC258VI , SC259 , SC259A , AC127 , SC4010 , SC4244 , SD109 , SD1893 , SD1893F , SD2222A , SD2222AF , SD2857 .

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