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SS8050
  SS8050
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SS8050
  SS8050
  SS8050
 
SS8050
  SS8050
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU826A
BU902 .. BUP23CF
BUP30 .. BUV90A
BUV90F .. BUY13
BUY13S .. CC338-40
CC5401 .. CFD1408
CFD1499 .. CK22C
CK25 .. CP100
CP1016 .. CSA1220O
CSA1220R .. CSC1674
CSC1674O .. CSD600K
CSD600KD .. D16P2
D16P3 .. D40DU4
D40DU5 .. D45VM2
D45VM3 .. DP350T05
DP500 .. DTA143T
DTA143TCA .. DTC314TV
DTC343TA .. ECG12
ECG123 .. ECG473
ECG474 .. ESM283
ESM2894 .. FCS9015C
FCS9016 .. FJX945
FJX945 .. FMMT597
FMMT6076 .. FV3502
FV3503 .. GC512K
GC515 .. GES5400R
GES5401 .. GMO656A
GP140 .. GT330G
GT330I .. HBDM60V600W
HBF422 .. HPT1012
HPT1210 .. IDD1407
IDD1408 .. JE9092
JE9092A .. KN4L3Z
KN4L4K .. KRA760E
KRA760F .. KRC831F
KRC831U .. KSB1017-O
KSB1017-R .. KSC2785-G
KSC2785-L .. KSD5041-P
KSD5041-Q .. KST56
KST63 .. KT3189V-9
KT3189V9 .. KT6128E
KT6128G .. KT8145A
KT8145B .. KT888A
KT888B .. KTB1151
KTB1234T .. KTD1937
KTD2058 .. MBT3904DW
MBT3904DW1 .. MJ10014
MJ10015 .. MJD32C
MJD32C-1 .. MJE5656
MJE5657 .. MM8002
MM8003 .. MMBT5551R
MMBT5551W .. MP10A
MP10B .. MP4965
MP500 .. MPS2906
MPS2906A .. MPSD02
MPSD03 .. MRF835
MRF840 .. NA11FH
NA11FI .. NB013EU
NB013EV .. NB212EI
NB212EJ .. NKT106
NKT107 .. NPS5131
NPS5132 .. NTE126A
NTE127 .. OC78D
OC78N .. PBSS4620PA
PBSS4630PA .. PH5416
PHD13003C .. PN706
PN706A .. RCA1001
RCA120 .. RN1507
RN1508 .. RN2705
RN2705JE .. S1381
S1382 .. SDM5011
SDM5012 .. SGSIF341
SGSIF343 .. SRA2211
SRA2211E .. STC4250F
STC4250L .. SYL1986
SYL2245 .. TA2333
TA2359A .. TIP127F
TIP127FP .. TIPP32A
TIPP32B .. TN3904
TN3904R .. TP708
TP750 .. UMX18N
UMX1N .. UN9214
UN9215Q .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
SS8050 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

SS8050 Transistor Datasheet. Parameters and Characteristics.

Type Designator: SS8050

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 1

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 1.5

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 85

Noise Figure, dB: -

Package of SS8050 transistor: TO92

SS8050 Equivalent Transistors - Cross-Reference Search

SS8050 PDF doc:

1.1. ss8050.pdf Size:157K _fairchild_semi

SS8050
SS8050
SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to SS8550 Collector Current: IC=1.5A Collector Power Dissipation: PC=2W (TC=25C) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current 1.5 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 C TSTG Storage Temperature -65 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=100A, IE=0 40 V BVCEO Collector-Emitter Breakdown Voltage IC=2mA, IB=0 25 V BVEBO Emitter-Base Breakdown Voltage IE=100A, IC=0 6 V ICBO Collector Cut-off Current VCB=35V, IE=0 100 nA IEBO Emitter Cut-off Current VEB=6V, IC=0 100 nA hFE1 DC Curren

1.2. ss8050.pdf Size:62K _samsung

SS8050
SS8050
SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION. Complimentary to SS8550 Collector Current IC=1.5A Collector Dissipation:PC=2W (TC=25 ) ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V Collector Current IC 1.5 A Collector Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC=100 , IE=0 40 V Collector-Emitter Breakdown Voltage BVCEO IC=2mA, IB=0 25 V Emitter-Base Breakdown Voltage BVEBO IE=100 , IC=0 V 6 Collector Cut-off Current ICBO VCB=35V, IE=0 100 nA Emitter Cut-off Current IEBO VEB=6V, IC=0 100 nA DC Current Gain hFE1 VCE=1V, IC=5mA 45 135 hFE2 VCE=1V, IC=100mA 85 1

1.3. ss8050w.pdf Size:258K _secos

SS8050
SS8050
SS8050W NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-323 FEATURES Collector Dim Min Max 3 3 A 1.800 2.200 Power dissipation 1 1 B 1.150 1.350 2 Base PCM : 0.2 W C 0.800 1.000 Collector Current D 0.300 0.400 2 ICM : 1.5 A A G 1.200 1.400 Emitter L H 0.000 0.100 Collector-base voltage J 0.100 0.250 3 V(BR)CBO : 40 V S Top View B K 0.350 0.500 Operating & storage junction temperature 1 2 L 0.590 0.720 O O Tj, Tstg : - 55 C ~ + 150 C S 2.000 2.400 V G V 0.280 0.420 All Dimension in mm C H J D K O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V 40 V (BR)CBO Ic= 100?A, I =0 E Collector-emitter breakdown voltage V Ic= 0.1mA, I =0 25 V (BR)CEO B Emitter-base breakdown voltage V 5 V (BR)EBO I =100?A, I =0 E C Collector cut-off current I V =40 V , I =0 0.1 CBO CB E ?A Collector cut-off cu

1.4. ss8050.pdf Size:310K _secos

SS8050
SS8050
SS8050 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A L ? Complimentary to SS8550 3 3 Top View ? Power Dissipation C B 1 1 2 PCM : 0.3W 2 K E ? Collector Current ICM : 1.5A D Collector H J ? Collector - Base Voltage F G ?? V(BR)CBO : 40V ? Operating & Storage junction temperature Millimeter Millimeter REF. REF. Min. Max. Min. Max. TJ, TSTG : -55? ~ +150? ?? A 2.70 3.04 G - 0.18 Base B 2.10 2.80 H 0.40 0.60 MARKING : Y1 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50 ?? Emitter MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector - Base Voltage VCBO 40 V Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 5 V Collector Current - Continuous IC 1.5 A Collector Power Dissapation PC 0.3 W Junction, Storage Temperature TJ, TSTG 15

1.5. ss8050t.pdf Size:105K _secos

SS8050
SS8050
SS8050T NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Power dissipation PCM : 1 W Collector Current ICM : 1.5 A 1 Collector-base voltage 2 3 V(BR)CBO : 40 V 1 2 3 Operating & storage junction temperature 1 O O Tj, Tstg : - 55 C ~ + 150 C 1. EMITTER 2 2. BASS 3 . COLLECTOR 3 O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V 40 V (BR)CBO Ic= 100?A, I =0 E Collector-emitter breakdown voltage V Ic= 0.1mA, I =0 25 V (BR)CEO B Emitter-base breakdown voltage V 5 V (BR)EBO I =100?A, I =0 E C Collector cut-off current I V =40 V , I =0 0.1 CBO CB E ?A Collector cut-off current I V =20V , I =0 0.1 CEO CE B ?A Emitter cut-off current I V =5V, I =0 0.1 EBO EB C ?A H V =1V, I = 100mA 85 400 FE(1) CE C DC current gain H V =1V, I = 800mA 40 FE(2) CE

1.6. ss8050.pdf Size:888K _htsemi

SS8050
SS8050
SS8 050 SOT-23 TRANSISTOR(NPN) 1. BASE FEATURES 2. EMITTER Complimentary to SS8550 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) ? Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 ?A Collector cut-off current ICEO VCB=20V, IE=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 ?A hFE(1) VCE=1V, IC= 100mA 120 400 DC current gain hFE(2) VCE=1V, I

1.7. ss8050.pdf Size:292K _gsme

SS8050
SS8050
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage of Small Motor ????? Complementary to GM8550 ? GM8550 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage 40 VCBO Vdc ???-???? 25(GMC6802) Collect-Emitter Voltage 25 VCEO Vdc ???-????? 18(GMC6802) Emitter-Base Voltage VEBO 5.0 Vdc ???-???? 500(S8050A,S8050) 1000(M8050) Collector Current 1200(MMT8050) Ic mAdc ????? 1500(SS8050) 1800(GMC6802) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. MMT8050=Y1 SS8050=Y.1 GMC6802=

1.8. ss8050_to-92.pdf Size:168K _lge

SS8050
SS8050
SS8050(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation PCM : 1 W (TA=25?) : 2 W (TC=25?) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 ?A Emitter cut-off current ICEO VCE=20V, IE=0 0.1 ?A Emitter cut-off current IEBO VEB=5V, IC=0 0.1 ?A hFE(1) VCE=1V, IC=100mA 85 400 DC cur

1.9. ss8050_sot-23.pdf Size:323K _lge

SS8050
SS8050
SS8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to SS8550 MARKING: Y1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 ?A Collector cut-off current ICEO VCB=20V, IE=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 ?A hFE(1) VCE=1V, IC= 100mA 1

1.10. ss8050.pdf Size:223K _wietron

SS8050
SS8050
SS8050 NPN General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR MAXIMUM RATINGS(TA=25?C unless otherwise noted) Rating Symbol Value Unit VCBO 40 Collector-Base Voltage V Collector-Emitter Voltage VCEO 25 V VEBO Emitter-Base Voltage 5 V Collector Current-Continuous IC A 1.5 Total Device Dissipation TA=25°C PD W 1.0 TJ,Tstg Junction and Storage, Temperature -55 to +150 °C ELECTRICAL CHARACTERISTICS (TA=25?C unless otherwise noted) Characteristics Symbol Max Unit Min Typ Collector-Base Breakdown Voltage V(BR)CBO 40 - V - IC=100µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 25 - - V IC=0.1mA, IB=0 Emitter Base Breakdown Voltage V(BR)EBO 5 - - V IE=100µA, IC=0 Collector cut-off current µA ICBO - - 0.1 VCB=40V, IE=0 Emitter cut-off current µA - - 0.1 ICEO VCE=20V, IE=0 Emitter cut-off current µA IEBO - - 0.1 VEB=5V, IC=0 WEITRON 1/4 19-Jul-05 http://www.weitron.com.tw SS8050 ON

1.11. ss8050lt1.pdf Size:165K _wietron

SS8050
SS8050
SS8050LT1 NPN General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO 25 40 5.0 1500 300 2.4 417 0.1 25 40 100 5.0 100 u 0.15 35 0.15 u 4.0 WEITRON 27-Jul-2012 1/2 http://www.weitron.com.tw SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain - (IC=100 mAdc, VCE=1.0 Vdc) hFE 600 100 Collector-Emitter Saturation Voltage VCE(sat) - Vdc 0.5 (IC=800 mAdc, IB=80mAdc) CLASSIFICATION OF h FE P Rank Q R S Range 100-200 150-300 200-400 300-600 Marking 1HA 1HC 1HE 1HG SOT-23 Outline Dimension SOT-23 A Dim Min Max A 0.35 0.51 B 1.19 1.40 B C TOP VIEW C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 D G G 1.70 2.10 E H H 2.70 3.10 J 0.01 0.13 K K 0.89 1.10 L 0.30 0.61 L M J M 0.076 0.25 WEITRON 27-Jul-2012 2/2 http://www.weitron.com.tw

See also transistors datasheet: SQ4957 , SQ4957F , SQ5109 , SQ5109F , SQ918 , SQ918F , SS1906 , SS2503A , 2N2905 , SS8550 , SS9011 , SS9012 , SS9013 , SS9014 , SS9015 , SS9016 , SS9018 .

Keywords

 SS8050 Datasheet  SS8050 Datenblatt  SS8050 RoHS  SS8050 Distributor
 SS8050 Application Notes  SS8050 Component  SS8050 Circuit  SS8050 Schematic
 SS8050 Equivalent  SS8050 Cross Reference  SS8050 Data Sheet  SS8050 Fiche Technique

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