All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
2N5193
  2N5193
  2N5193
 
2N5193
  2N5193
  2N5193
 
2N5193
  2N5193
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU505F
BU506 .. BUL54A
BUL54AFI .. BUV26
BUV26A .. BUX67B
BUX67C .. C63
C64 .. CDT1313
CDT1315 .. CIL932
CIL997 .. CMPT3646
CMPT3904 .. CS9011I
CS9012 .. CSB834Y
CSB856 .. CSD1168
CSD1168P .. CZT2222A
CZT2907 .. D38S6
D38S7 .. D44U5
D44U6 .. DCP68-25
DCP69 .. DTA115EE
DTA115EEA .. DTC143E
DTC143ECA .. DXT3906
DXT458P5 .. ECG333
ECG334 .. ES3111
ES3112 .. F4
F5 .. FJPF13009
FJPF3305 .. FMMT4401
FMMT4402 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34/15
GFT34/30 .. GT2765
GT2766 .. HA7520
HA7521 .. HMJE3055T
HMPSA06 .. HUN5130
HUN5131 .. JC548
JC548A .. KF2001
KF2002 .. KRA723T
KRA723U .. KRC655E
KRC655U .. KSA539-O
KSA539-R .. KSC2383-Y
KSC2500 .. KSD1616A
KSD1616A-G .. KSR1110
KSR1111 .. KT3146G-9
KT3146V-9 .. KT605AM
KT605B .. KT8117A
KT8117B .. KT841V
KT842A .. KTA1543T
KTA1544T .. KTC5706L
KTC5707D .. MA117
MA1702 .. MF1164
MF3304 .. MJ6302
MJ6308 .. MJE341K
MJE3439 .. MM3906
MM4000 .. MMBT4274
MMBT4275 .. MMUN2116
MMUN2116L .. MP3691
MP3692 .. MPQ5130
MPQ5131 .. MPS6727
MPS6728 .. MRF316
MRF317 .. MUN5316DW
MUN5316DW1 .. NA61U
NA61W .. NB122E
NB122EH .. NB321E
NB321F .. NPS3641
NPS3642 .. NSS1C201LT1G
NSS1C201MZ4T1G .. OC4405
OC443 .. PBSS302PX
PBSS302PZ .. PE3100
PE4010 .. PN3904
PN3904R .. PZT4401
PZT4403 .. RN1116FT
RN1116MFV .. RN2306
RN2307 .. RS7515
RS7526 .. SD2857
SD2857F .. SFT352
SFT353 .. SQ3960
SQ3960F .. ST83003
ST8509 .. SUR546J
SUR547J .. T3003
T3004 .. TI607A
TI610 .. TIP664
TIP665 .. TN3019A
TN3020 .. TP3905R
TP3906 .. UMC2N
UMC3 .. UN6117S
UN6118 .. ZT112
ZT113 .. ZTX326M
ZTX327 .. ZXTN23015CFH
ZXTN25012EFH .. ZXTPS720MC
 
2N5193 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N5193 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N5193

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 40

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 4

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 2

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of 2N5193 transistor: TO126

2N5193 Equivalent Transistors - Cross-Reference Search

2N5193 PDF doc:

1.1. 2n5193_2n5194_2n5195.pdf Size:42K _jmnic

2N5193
2N5193
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5193 2N5194 2N5195 DESCRIPTION · ·With TO-126 package ·Complement to type 2N5190,2N5191,2N5192 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N5193 -40 VCBO Collector-base voltage 2N5194 Open emitter -60 V 2N5195 -80 2N5193 -40 VCEO Collector-emitter voltage 2N5194 Open base -60 V 2N5195 -80 VEBO Emitter-base voltage Open collector -5 V IC Collector current -4 A ICM Collector current-Peak -7 A IB Base current -1 A PD Total power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 3.12 ?/W JMnic Product Specification ww

1.2. 2n5193_2n5194_2n5195.pdf Size:118K _inchange_semiconductor

2N5193
2N5193
Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2N5190/5191/5192 Ў¤ Excellent safe operating area APPLICATIONS Ў¤ For use in medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2N5193 2N5194 2N5195 Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage CHA 2N5193 2N5194 Open emitter VCEO Collector-emitter voltage VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current IN NG S 2N5193 2N5194 2N5195 2N5195 Open base CON EMI TOR DUC VALUE -40 -60 -80 -40 -60 -80 -5 -4 -7 -1 UNIT V V Open collector V A A A W Ўж Ўж Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25Ўж 40 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAME

5.1. 2n5194_2n5195.pdf Size:212K _motorola

2N5193
2N5193
Order this document MOTOROLA by 2N5194/D SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE IIIIIIIIIIIIIIIIIIIIIII POWER TRANSISTORS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIII IIII SILICON PNP IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIIIIIIIII IIII III 6080 VOLTS IIIII IIII IIIII IIII *MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIII IIII IIIII IIII IIIII IIII Rating Symbol 2N5194 2N5195 Unit IIIIIIIIIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIII IIIII IIII IIIII IIII IIIII IIII CollectorEmitter Voltage VCEO IIIIIIIVdc 60 80 IIIIIIIIIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIIIIIIIII IIIIIII IIIII IIIII III IIIII IIII IIIII IIII CollectorBase Vol

5.2. 2n5191_2n5192.pdf Size:217K _motorola

2N5193
2N5193
Order this document MOTOROLA by 2N5191/D SEMICONDUCTOR TECHNICAL DATA 2N5191 2N5192* Silicon NPN Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, excellent safe area limits. Complement to PNP 2N5194, 2N5195. 4 AMPERE IIIIIIIIIIIIIIIIIIIIIII POWER TRANSISTORS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIII IIII SILICON NPN IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIIIIIIIII IIII III 6080 VOLTS IIIII IIII IIIII IIII *MAXIMUM RATINGS 40 WATTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIII IIII IIIII IIII IIIII IIII Rating Symbol 2N5191 2N5192 Unit IIIIIIIIIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIII IIIII IIII IIIII IIII IIIII IIII CollectorEmitter Voltage VCEO IIIIIIIVdc 60 80 IIIIIIIIIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIIIIIIIII IIIIIII IIIII IIIII III IIIII IIII IIIII IIII Collect

5.3. 2n5195.pdf Size:206K _st

2N5193
2N5193
2N5195 Low voltage PNP power transistor Features Low saturation voltage PNP transistor Application Audio, power linear and switching equipment 1 2 Description 3 SOT-32 The device is manufactured in planar technology with base island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The Figure 1. Internal schematic diagram NPN type is the 2N5192. Table 1. Devices summary Order code Marking Package Packaging 2N5195 2N5195 SOT-32 Tube November 2009 Doc ID 5074 Rev 4 1/9 www.st.com 9 Electrical ratings 2N5195 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) -80 V VCEO Collector-emitter voltage (IB = 0) -80 V VEBO Emitter-base voltage (IC = 0) -5 V IC Collector current -4 A ICM Collector peak current -7 A IB Base current -1 A PTOT Total dissipation at Tcase = 25 C 40 W TSTG Storage temperature -65 to 150 C TJ

5.4. 2n5191_2n5192.pdf Size:230K _st

2N5193
2N5193
2N5191 2N5192 NPN power transistors Features NPN transistors Applications Linear and switching industrial equipment Description 1 2 The devices are manufactured in Planar 3 technology with Base Island layout. The SOT-32 resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type of 2N5192 is 2N5195. Figure 1. Internal schematic diagram Table 1. Devices summary Order code Marking Package Packaging 2N5191 2N5191 SOT-32 Tube 2N5192 2N5192 SOT-32 Tube June 2007 Rev 3 1/9 www.st.com 9 Electrical ratings 2N5191 2N5192 1 Electrical ratings Table 2. Absolute maximum rating Value Symbol Parameter Unit 2N5191 2N5192 VCBO Collector-base voltage (IE = 0) 60 80 V VCEO Collector-base voltage (IB = 0) 60 80 V VEBO Emitter-base voltage (IC = 0) 5 V IC Collector current 4 A ICM Collector peak current 7 A IB Base current 1 A PTOT Total dissipation at Tcase = 25C 40 W Tstg Storage temperature -65 to 150

5.5. 2n5196_2n5197_2n5198_2n5199.pdf Size:65K _vishay

2N5193
2N5193
2N5196/5197/5198/5199 Vishay Siliconix Monolithic N-Channel JFET Duals PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 VGS2j Max (mV) 2N5196 0.7 to 4 50 1 15 5 2N5197 0.7 to 4 50 1 15 5 2N5198 0.7 to 4 50 1 15 10 2N5199 0.7 to 4 50 1 15 15 FEATURES BENEFITS APPLICATIONS D Monolithic Design D Tight Differential Match vs. Current D Wideband Differential Amps D High Slew Rate D Improved Op Amp Speed, Settling Time D High-Speed, Temp-Compensated, Accuracy Single-Ended Input Amps D Low Offset/Drift Voltage D Minimum Input Error/Trimming Requirement D High Speed Comparators D Low Gate Leakage: 5 pA D Insignificant Signal Loss/Error Voltage D Impedance Converters D Low Noise D High System Sensitivity D High CMRR: 100 dB D Minimum Error with Large Input Signal DESCRIPTION The 2N5196/5197/5198/5199 JFET duals are designed for The hermetically-sealed TO-71 package is available with full high-performance differentia

5.6. 2n5190_2n5191_2n5192.pdf Size:61K _central

2N5193
2N5193
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

5.7. 2n5194_2n5195.pdf Size:86K _onsemi

2N5193
2N5193
2N5194, 2N5195 Preferred Devices Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Complement to NPN 2N5191, 2N5192. http://onsemi.com Features Pb-Free Packages are Available* 4 AMPERE POWER TRANSISTORS IIIIIIIIIIIIIIIIIII MAXIMUM RATINGS (Note 1) PNP SILICON IIIIIIIIIIIIIIIIIII IIIIIIIIIII III II III IIII Rating Symbol 2N5194 2N5195 Unit 60 - 80 VOLTS IIIIIIIIIII III II IIIIIIIIIII III II III IIII III IIII Collector-Emitter Voltage VCEO 60 80 Vdc IIIIIIIIIII III II IIIIIIIIIII III II III IIII III IIII Collector-Base Voltage VCB 60 80 Vdc IIIIIIIIIII III II IIIIIIIIIII IIIIII III II III IIII Emitter-Base Voltage VEB 5.0 Vdc IIIIIIIIIII IIIIII III II IIIIIIIIIII IIIIII III II Collector Current IC 4.0 Adc IIIIIIIIIII IIIIII IIIIIIIIIII IIIIII III II III II Base Current IB 1.0 Adc IIIIIIIIIII IIIIII IIIIIIIIIII IIIIII III II III II Total Device Dissipatio

5.8. 2n5190_2n5191_2n5192.pdf Size:84K _onsemi

2N5193
2N5193
2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com Features ESD Ratings: Machine Model, C; > 400 V 4.0 AMPERES Human Body Model, 3B; > 8000 V NPN SILICON Epoxy Meets UL 94 V-0 @ 0.125 in. POWER TRANSISTORS Pb-Free Packages are Available* 40, 60, 80 VOLTS - 40 WATTS MAXIMUM RATINGS Rating Symbol Value Unit TO-225AA Collector-Emitter Voltage 2N5190 VCEO 40 Vdc CASE 77 2N5191 60 STYLE 1 2N5192 80 Collector-Base Voltage 2N5190 VCBO 40 Vdc 3 2N5191 60 2 1 2N5192 80 Emitter-Base Voltage VEBO 5.0 Vdc MARKING DIAGRAM Collector Current IC 4.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25C PD 40 W YWW Derate above 25C 320 mW/C 2 N519xG Operating and Storage Junction TJ, Tstg 65 to +150 C Temperature Range THERMAL CHARACTERISTICS Y = Year WW = Work Week Characte

5.9. 2n5191_92.pdf Size:130K _cdil

2N5193
2N5193
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS 2N5191 2N5192 TO126 Plastic Package E C B Use in Medium Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5191 2N5192 UNIT Collector -Base Voltage VCBO 60 80 V Collector -Emitter Voltage VCEO 60 80 V Emitter Base Voltage VEBO 5V Collector Current IC 4A Collector Peak Current ICM 7A Base Current IB 1A Total Dissipation @ TC<25 ?C Ptot 40 W Junction Temperature Tj 150 ?C Storage Temperature Range Tstg -65 to 150 ?C Thermal Resistance Junction to Case Rth(j-c) 3.12 ?C/W Junction to Ambient Rth(j-a) 100 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector Emitter Sustaining Voltage VCEO*(sus) IC=100mA, IB=0 2N5191 60 - - V 2N5192 80 - - V Collector Cut off Current ICBO VCB=rated VCBO, IE=0 - - 0.1 mA ICEX VCE=rated VCEO

5.10. 2n5190_2n5191_2n5192.pdf Size:42K _jmnic

2N5193
2N5193
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5190 2N5191 2N5192 DESCRIPTION · ·With TO-126 package ·Complement to type 2N5193,2N5194,2N5195 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N5190 40 VCBO Collector-base voltage 2N5191 Open emitter 60 V 2N5192 80 2N5190 40 VCEO Collector-emitter voltage 2N5191 Open base 60 V 2N5192 80 VEBO Emitter-base voltage Open collector 5 V IC Collector current 4 A ICM Collector current-Peak 7 A IB Base current 1 A PD Total power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 3.12 ?/W JMnic Product Specification www.jmnic.co

5.11. 2n5190_2n5191_2n5192.pdf Size:118K _inchange_semiconductor

2N5193
2N5193
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5190 2N5191 2N5192 DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2N5193/5194/5195 Ў¤ Excellent safe operating area APPLICATIONS Ў¤ For use in medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETER 2N5190 VCBO Collector-base voltage VCEO Collector-emitter voltage INC NG S HA 2N5191 2N5192 2N5190 2N5191 2N5192 Open emitter CON EMI CONDITIONS TOR DUC VALUE 40 60 80 40 60 80 UNIT V Open base V VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature Open collector 5 4 7 1 V A A A W Ўж Ўж TC=25Ўж 40 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER T

See also transistors datasheet: 2N5187 , 2N5188 , 2N5189 , 2N518A , 2N519 , 2N5190 , 2N5191 , 2N5192 , AC128 , 2N5194 , 2N5195 , 2N519A , 2N52 , 2N520 , 2N5200 , 2N5201 , 2N5202 .

Keywords

 2N5193 Datasheet  2N5193 Datenblatt  2N5193 RoHS  2N5193 Distributor
 2N5193 Application Notes  2N5193 Component  2N5193 Circuit  2N5193 Schematic
 2N5193 Equivalent  2N5193 Cross Reference  2N5193 Data Sheet  2N5193 Fiche Technique

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com