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2N5193
  2N5193
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2N5193
  2N5193
  2N5193
 
2N5193
  2N5193
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
2N5193 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N5193 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N5193

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 40

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 4

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 2

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of 2N5193 transistor: TO126

2N5193 Equivalent Transistors - Cross-Reference Search

2N5193 PDF doc:

1.1. 2n5193_2n5194_2n5195.pdf Size:42K _jmnic

2N5193
2N5193
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5193 2N5194 2N5195 DESCRIPTION · ·With TO-126 package ·Complement to type 2N5190,2N5191,2N5192 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N5193 -40 VCBO Collector-base voltage 2N5194 Open emitter -60 V 2N5195 -80 2N5193 -40 VCEO Collector-emitter voltage 2N5194 Open base -60 V 2N5195 -80 VEBO Emitter-base voltage Open collector -5 V IC Collector current -4 A ICM Collector current-Peak -7 A IB Base current -1 A PD Total power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 3.12 ?/W JMnic Product Specification ww

1.2. 2n5193_2n5194_2n5195.pdf Size:118K _inchange_semiconductor

2N5193
2N5193
Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2N5190/5191/5192 Ў¤ Excellent safe operating area APPLICATIONS Ў¤ For use in medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2N5193 2N5194 2N5195 Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage CHA 2N5193 2N5194 Open emitter VCEO Collector-emitter voltage VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current IN NG S 2N5193 2N5194 2N5195 2N5195 Open base CON EMI TOR DUC VALUE -40 -60 -80 -40 -60 -80 -5 -4 -7 -1 UNIT V V Open collector V A A A W Ўж Ўж Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25Ўж 40 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAME

5.1. 2n5194_2n5195.pdf Size:212K _motorola

2N5193
2N5193
Order this document MOTOROLA by 2N5194/D SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE IIIIIIIIIIIIIIIIIIIIIII POWER TRANSISTORS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIII IIII SILICON PNP IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIIIIIIIII IIII III 6080 VOLTS IIIII IIII IIIII IIII *MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIII IIII IIIII IIII IIIII IIII Rating Symbol 2N5194 2N5195 Unit IIIIIIIIIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIII IIIII IIII IIIII IIII IIIII IIII CollectorEmitter Voltage VCEO IIIIIIIVdc 60 80 IIIIIIIIIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIIIIIIIII IIIIIII IIIII IIIII III IIIII IIII IIIII IIII CollectorBase Vol

5.2. 2n5191_2n5192.pdf Size:217K _motorola

2N5193
2N5193
Order this document MOTOROLA by 2N5191/D SEMICONDUCTOR TECHNICAL DATA 2N5191 2N5192* Silicon NPN Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, excellent safe area limits. Complement to PNP 2N5194, 2N5195. 4 AMPERE IIIIIIIIIIIIIIIIIIIIIII POWER TRANSISTORS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIII IIII SILICON NPN IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIIIIIIIII IIII III 6080 VOLTS IIIII IIII IIIII IIII *MAXIMUM RATINGS 40 WATTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIII IIII IIIII IIII IIIII IIII Rating Symbol 2N5191 2N5192 Unit IIIIIIIIIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIII IIIII IIII IIIII IIII IIIII IIII CollectorEmitter Voltage VCEO IIIIIIIVdc 60 80 IIIIIIIIIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIIIIIIIII IIIIIII IIIII IIIII III IIIII IIII IIIII IIII Collect

5.3. 2n5195.pdf Size:206K _st

2N5193
2N5193
2N5195 Low voltage PNP power transistor Features Low saturation voltage PNP transistor Application Audio, power linear and switching equipment 1 2 Description 3 SOT-32 The device is manufactured in planar technology with base island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The Figure 1. Internal schematic diagram NPN type is the 2N5192. Table 1. Devices summary Order code Marking Package Packaging 2N5195 2N5195 SOT-32 Tube November 2009 Doc ID 5074 Rev 4 1/9 www.st.com 9 Electrical ratings 2N5195 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) -80 V VCEO Collector-emitter voltage (IB = 0) -80 V VEBO Emitter-base voltage (IC = 0) -5 V IC Collector current -4 A ICM Collector peak current -7 A IB Base current -1 A PTOT Total dissipation at Tcase = 25 C 40 W TSTG Storage temperature -65 to 150 C TJ

5.4. 2n5191_2n5192.pdf Size:230K _st

2N5193
2N5193
2N5191 2N5192 NPN power transistors Features NPN transistors Applications Linear and switching industrial equipment Description 1 2 The devices are manufactured in Planar 3 technology with Base Island layout. The SOT-32 resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type of 2N5192 is 2N5195. Figure 1. Internal schematic diagram Table 1. Devices summary Order code Marking Package Packaging 2N5191 2N5191 SOT-32 Tube 2N5192 2N5192 SOT-32 Tube June 2007 Rev 3 1/9 www.st.com 9 Electrical ratings 2N5191 2N5192 1 Electrical ratings Table 2. Absolute maximum rating Value Symbol Parameter Unit 2N5191 2N5192 VCBO Collector-base voltage (IE = 0) 60 80 V VCEO Collector-base voltage (IB = 0) 60 80 V VEBO Emitter-base voltage (IC = 0) 5 V IC Collector current 4 A ICM Collector peak current 7 A IB Base current 1 A PTOT Total dissipation at Tcase = 25C 40 W Tstg Storage temperature -65 to 150

5.5. 2n5196_2n5197_2n5198_2n5199.pdf Size:65K _vishay

2N5193
2N5193
2N5196/5197/5198/5199 Vishay Siliconix Monolithic N-Channel JFET Duals PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 VGS2j Max (mV) 2N5196 0.7 to 4 50 1 15 5 2N5197 0.7 to 4 50 1 15 5 2N5198 0.7 to 4 50 1 15 10 2N5199 0.7 to 4 50 1 15 15 FEATURES BENEFITS APPLICATIONS D Monolithic Design D Tight Differential Match vs. Current D Wideband Differential Amps D High Slew Rate D Improved Op Amp Speed, Settling Time D High-Speed, Temp-Compensated, Accuracy Single-Ended Input Amps D Low Offset/Drift Voltage D Minimum Input Error/Trimming Requirement D High Speed Comparators D Low Gate Leakage: 5 pA D Insignificant Signal Loss/Error Voltage D Impedance Converters D Low Noise D High System Sensitivity D High CMRR: 100 dB D Minimum Error with Large Input Signal DESCRIPTION The 2N5196/5197/5198/5199 JFET duals are designed for The hermetically-sealed TO-71 package is available with full high-performance differentia

5.6. 2n5190_2n5191_2n5192.pdf Size:61K _central

2N5193
2N5193
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

5.7. 2n5194_2n5195.pdf Size:86K _onsemi

2N5193
2N5193
2N5194, 2N5195 Preferred Devices Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Complement to NPN 2N5191, 2N5192. http://onsemi.com Features Pb-Free Packages are Available* 4 AMPERE POWER TRANSISTORS IIIIIIIIIIIIIIIIIII MAXIMUM RATINGS (Note 1) PNP SILICON IIIIIIIIIIIIIIIIIII IIIIIIIIIII III II III IIII Rating Symbol 2N5194 2N5195 Unit 60 - 80 VOLTS IIIIIIIIIII III II IIIIIIIIIII III II III IIII III IIII Collector-Emitter Voltage VCEO 60 80 Vdc IIIIIIIIIII III II IIIIIIIIIII III II III IIII III IIII Collector-Base Voltage VCB 60 80 Vdc IIIIIIIIIII III II IIIIIIIIIII IIIIII III II III IIII Emitter-Base Voltage VEB 5.0 Vdc IIIIIIIIIII IIIIII III II IIIIIIIIIII IIIIII III II Collector Current IC 4.0 Adc IIIIIIIIIII IIIIII IIIIIIIIIII IIIIII III II III II Base Current IB 1.0 Adc IIIIIIIIIII IIIIII IIIIIIIIIII IIIIII III II III II Total Device Dissipatio

5.8. 2n5190_2n5191_2n5192.pdf Size:84K _onsemi

2N5193
2N5193
2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com Features ESD Ratings: Machine Model, C; > 400 V 4.0 AMPERES Human Body Model, 3B; > 8000 V NPN SILICON Epoxy Meets UL 94 V-0 @ 0.125 in. POWER TRANSISTORS Pb-Free Packages are Available* 40, 60, 80 VOLTS - 40 WATTS MAXIMUM RATINGS Rating Symbol Value Unit TO-225AA Collector-Emitter Voltage 2N5190 VCEO 40 Vdc CASE 77 2N5191 60 STYLE 1 2N5192 80 Collector-Base Voltage 2N5190 VCBO 40 Vdc 3 2N5191 60 2 1 2N5192 80 Emitter-Base Voltage VEBO 5.0 Vdc MARKING DIAGRAM Collector Current IC 4.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25C PD 40 W YWW Derate above 25C 320 mW/C 2 N519xG Operating and Storage Junction TJ, Tstg 65 to +150 C Temperature Range THERMAL CHARACTERISTICS Y = Year WW = Work Week Characte

5.9. 2n5191_92.pdf Size:130K _cdil

2N5193
2N5193
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS 2N5191 2N5192 TO126 Plastic Package E C B Use in Medium Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5191 2N5192 UNIT Collector -Base Voltage VCBO 60 80 V Collector -Emitter Voltage VCEO 60 80 V Emitter Base Voltage VEBO 5V Collector Current IC 4A Collector Peak Current ICM 7A Base Current IB 1A Total Dissipation @ TC<25 ?C Ptot 40 W Junction Temperature Tj 150 ?C Storage Temperature Range Tstg -65 to 150 ?C Thermal Resistance Junction to Case Rth(j-c) 3.12 ?C/W Junction to Ambient Rth(j-a) 100 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector Emitter Sustaining Voltage VCEO*(sus) IC=100mA, IB=0 2N5191 60 - - V 2N5192 80 - - V Collector Cut off Current ICBO VCB=rated VCBO, IE=0 - - 0.1 mA ICEX VCE=rated VCEO

5.10. 2n5190_2n5191_2n5192.pdf Size:42K _jmnic

2N5193
2N5193
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5190 2N5191 2N5192 DESCRIPTION · ·With TO-126 package ·Complement to type 2N5193,2N5194,2N5195 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N5190 40 VCBO Collector-base voltage 2N5191 Open emitter 60 V 2N5192 80 2N5190 40 VCEO Collector-emitter voltage 2N5191 Open base 60 V 2N5192 80 VEBO Emitter-base voltage Open collector 5 V IC Collector current 4 A ICM Collector current-Peak 7 A IB Base current 1 A PD Total power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 3.12 ?/W JMnic Product Specification www.jmnic.co

5.11. 2n5190_2n5191_2n5192.pdf Size:118K _inchange_semiconductor

2N5193
2N5193
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5190 2N5191 2N5192 DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2N5193/5194/5195 Ў¤ Excellent safe operating area APPLICATIONS Ў¤ For use in medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETER 2N5190 VCBO Collector-base voltage VCEO Collector-emitter voltage INC NG S HA 2N5191 2N5192 2N5190 2N5191 2N5192 Open emitter CON EMI CONDITIONS TOR DUC VALUE 40 60 80 40 60 80 UNIT V Open base V VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature Open collector 5 4 7 1 V A A A W Ўж Ўж TC=25Ўж 40 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER T

See also transistors datasheet: 2N5187 , 2N5188 , 2N5189 , 2N518A , 2N519 , 2N5190 , 2N5191 , 2N5192 , AC128 , 2N5194 , 2N5195 , 2N519A , 2N52 , 2N520 , 2N5200 , 2N5201 , 2N5202 .

Keywords

 2N5193 Datasheet  2N5193 Datenblatt  2N5193 RoHS  2N5193 Distributor
 2N5193 Application Notes  2N5193 Component  2N5193 Circuit  2N5193 Schematic
 2N5193 Equivalent  2N5193 Cross Reference  2N5193 Data Sheet  2N5193 Fiche Technique

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