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2N5193
  2N5193
  2N5193
 
2N5193
  2N5193
  2N5193
 
2N5193
  2N5193
 
 
List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
2N5193 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N5193 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N5193

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 40

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 4

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 2

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of 2N5193 transistor: TO126

2N5193 Equivalent Transistors - Cross-Reference Search

2N5193 PDF doc:

1.1. 2n5193_2n5194_2n5195.pdf Size:118K _inchange_semiconductor

2N5193
2N5193
Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2N5190/5191/5192 Ў¤ Excellent safe operating area APPLICATIONS Ў¤ For use in medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2N5193 2N5194 2N5195 Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage CHA 2N5193 2N5194 Open emitter VCEO Collector-emitter voltage VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current IN NG S 2N5193 2N5194 2N5195 2N5195 Open base CON EMI TOR DUC VALUE -40 -60 -80 -40 -60 -80 -5 -4 -7 -1 UNIT V V Open collector V A A A W Ўж Ўж Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25Ўж 40 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAME

5.1. 2n5194_2n5195.pdf Size:212K _motorola

2N5193
2N5193
Order this document MOTOROLA by 2N5194/D SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE IIIIIIIIIIIIIIIIIIIIIII POWER TRANSISTORS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIII IIII SILICON PNP IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIIIIIIIII IIII III 6080 VOLTS IIIII IIII IIIII IIII *MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIII IIII IIIII IIII IIIII IIII Rating Symbol 2N5194 2N5195 Unit IIIIIIIIIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIII IIIII IIII IIIII IIII IIIII IIII CollectorEmitter Voltage VCEO IIIIIIIVdc 60 80 IIIIIIIIIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIIIIIIIII IIIIIII IIIII IIIII III IIIII IIII IIIII IIII CollectorBase Vol

5.2. 2n5191_2n5192.pdf Size:217K _motorola

2N5193
2N5193
Order this document MOTOROLA by 2N5191/D SEMICONDUCTOR TECHNICAL DATA 2N5191 2N5192* Silicon NPN Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, excellent safe area limits. Complement to PNP 2N5194, 2N5195. 4 AMPERE IIIIIIIIIIIIIIIIIIIIIII POWER TRANSISTORS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIII IIII SILICON NPN IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIIIIIIIII IIII III 6080 VOLTS IIIII IIII IIIII IIII *MAXIMUM RATINGS 40 WATTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIII IIII IIIII IIII IIIII IIII Rating Symbol 2N5191 2N5192 Unit IIIIIIIIIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIII IIIII IIII IIIII IIII IIIII IIII CollectorEmitter Voltage VCEO IIIIIIIVdc 60 80 IIIIIIIIIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIIIIIIIII IIIIIII IIIII IIIII III IIIII IIII IIIII IIII Collect

5.3. 2n5195.pdf Size:206K _st

2N5193
2N5193
2N5195 Low voltage PNP power transistor Features Low saturation voltage PNP transistor Application Audio, power linear and switching equipment 1 2 Description 3 SOT-32 The device is manufactured in planar technology with base island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The Figure 1. Internal schematic diagram NPN type is the 2N5192. Table 1. Devices summary Order code Marking Package Packaging 2N5195 2N5195 SOT-32 Tube November 2009 Doc ID 5074 Rev 4 1/9 www.st.com 9 Electrical ratings 2N5195 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) -80 V VCEO Collector-emitter voltage (IB = 0) -80 V VEBO Emitter-base voltage (IC = 0) -5 V IC Collector current -4 A ICM Collector peak current -7 A IB Base current -1 A PTOT Total dissipation at Tcase = 25 C 40 W TSTG Storage temperature -65 to 150 C TJ

5.4. 2n5191_2n5192.pdf Size:230K _st

2N5193
2N5193
2N5191 2N5192 NPN power transistors Features NPN transistors Applications Linear and switching industrial equipment Description 1 2 The devices are manufactured in Planar 3 technology with Base Island layout. The SOT-32 resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type of 2N5192 is 2N5195. Figure 1. Internal schematic diagram Table 1. Devices summary Order code Marking Package Packaging 2N5191 2N5191 SOT-32 Tube 2N5192 2N5192 SOT-32 Tube June 2007 Rev 3 1/9 www.st.com 9 Electrical ratings 2N5191 2N5192 1 Electrical ratings Table 2. Absolute maximum rating Value Symbol Parameter Unit 2N5191 2N5192 VCBO Collector-base voltage (IE = 0) 60 80 V VCEO Collector-base voltage (IB = 0) 60 80 V VEBO Emitter-base voltage (IC = 0) 5 V IC Collector current 4 A ICM Collector peak current 7 A IB Base current 1 A PTOT Total dissipation at Tcase = 25C 40 W Tstg Storage temperature -65 to 150

5.5. 2n5196_2n5197_2n5198_2n5199.pdf Size:65K _vishay

2N5193
2N5193
2N5196/5197/5198/5199 Vishay Siliconix Monolithic N-Channel JFET Duals PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 VGS2j Max (mV) 2N5196 0.7 to 4 50 1 15 5 2N5197 0.7 to 4 50 1 15 5 2N5198 0.7 to 4 50 1 15 10 2N5199 0.7 to 4 50 1 15 15 FEATURES BENEFITS APPLICATIONS D Monolithic Design D Tight Differential Match vs. Current D Wideband Differential Amps D High Slew Rate D Improved Op Amp Speed, Settling Time D High-Speed, Temp-Compensated, Accuracy Single-Ended Input Amps D Low Offset/Drift Voltage D Minimum Input Error/Trimming Requirement D High Speed Comparators D Low Gate Leakage: 5 pA D Insignificant Signal Loss/Error Voltage D Impedance Converters D Low Noise D High System Sensitivity D High CMRR: 100 dB D Minimum Error with Large Input Signal DESCRIPTION The 2N5196/5197/5198/5199 JFET duals are designed for The hermetically-sealed TO-71 package is available with full high-performance differentia

5.6. 2n5190_2n5191_2n5192.pdf Size:61K _central

2N5193
2N5193
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

5.7. 2n5194_2n5195.pdf Size:86K _onsemi

2N5193
2N5193
2N5194, 2N5195 Preferred Devices Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Complement to NPN 2N5191, 2N5192. http://onsemi.com Features Pb-Free Packages are Available* 4 AMPERE POWER TRANSISTORS IIIIIIIIIIIIIIIIIII MAXIMUM RATINGS (Note 1) PNP SILICON IIIIIIIIIIIIIIIIIII IIIIIIIIIII III II III IIII Rating Symbol 2N5194 2N5195 Unit 60 - 80 VOLTS IIIIIIIIIII III II IIIIIIIIIII III II III IIII III IIII Collector-Emitter Voltage VCEO 60 80 Vdc IIIIIIIIIII III II IIIIIIIIIII III II III IIII III IIII Collector-Base Voltage VCB 60 80 Vdc IIIIIIIIIII III II IIIIIIIIIII IIIIII III II III IIII Emitter-Base Voltage VEB 5.0 Vdc IIIIIIIIIII IIIIII III II IIIIIIIIIII IIIIII III II Collector Current IC 4.0 Adc IIIIIIIIIII IIIIII IIIIIIIIIII IIIIII III II III II Base Current IB 1.0 Adc IIIIIIIIIII IIIIII IIIIIIIIIII IIIIII III II III II Total Device Dissipatio

5.8. 2n5190_2n5191_2n5192.pdf Size:84K _onsemi

2N5193
2N5193
2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com Features ESD Ratings: Machine Model, C; > 400 V 4.0 AMPERES Human Body Model, 3B; > 8000 V NPN SILICON Epoxy Meets UL 94 V-0 @ 0.125 in. POWER TRANSISTORS Pb-Free Packages are Available* 40, 60, 80 VOLTS - 40 WATTS MAXIMUM RATINGS Rating Symbol Value Unit TO-225AA Collector-Emitter Voltage 2N5190 VCEO 40 Vdc CASE 77 2N5191 60 STYLE 1 2N5192 80 Collector-Base Voltage 2N5190 VCBO 40 Vdc 3 2N5191 60 2 1 2N5192 80 Emitter-Base Voltage VEBO 5.0 Vdc MARKING DIAGRAM Collector Current IC 4.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25C PD 40 W YWW Derate above 25C 320 mW/C 2 N519xG Operating and Storage Junction TJ, Tstg 65 to +150 C Temperature Range THERMAL CHARACTERISTICS Y = Year WW = Work Week Characte

5.9. 2n5191_92.pdf Size:130K _cdil

2N5193
2N5193
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS 2N5191 2N5192 TO126 Plastic Package E C B Use in Medium Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5191 2N5192 UNIT Collector -Base Voltage VCBO 60 80 V Collector -Emitter Voltage VCEO 60 80 V Emitter Base Voltage VEBO 5V Collector Current IC 4A Collector Peak Current ICM 7A Base Current IB 1A Total Dissipation @ TC<25 ?C Ptot 40 W Junction Temperature Tj 150 ?C Storage Temperature Range Tstg -65 to 150 ?C Thermal Resistance Junction to Case Rth(j-c) 3.12 ?C/W Junction to Ambient Rth(j-a) 100 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector Emitter Sustaining Voltage VCEO*(sus) IC=100mA, IB=0 2N5191 60 - - V 2N5192 80 - - V Collector Cut off Current ICBO VCB=rated VCBO, IE=0 - - 0.1 mA ICEX VCE=rated VCEO

5.10. 2n5190_2n5191_2n5192.pdf Size:118K _inchange_semiconductor

2N5193
2N5193
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5190 2N5191 2N5192 DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2N5193/5194/5195 Ў¤ Excellent safe operating area APPLICATIONS Ў¤ For use in medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETER 2N5190 VCBO Collector-base voltage VCEO Collector-emitter voltage INC NG S HA 2N5191 2N5192 2N5190 2N5191 2N5192 Open emitter CON EMI CONDITIONS TOR DUC VALUE 40 60 80 40 60 80 UNIT V Open base V VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature Open collector 5 4 7 1 V A A A W Ўж Ўж TC=25Ўж 40 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER T

See also transistors datasheet: 2N5187 , 2N5188 , 2N5189 , 2N518A , 2N519 , 2N5190 , 2N5191 , 2N5192 , AC128 , 2N5194 , 2N5195 , 2N519A , 2N52 , 2N520 , 2N5200 , 2N5201 , 2N5202 .

Keywords

 2N5193 Datasheet  2N5193 Datenblatt  2N5193 RoHS  2N5193 Distributor
 2N5193 Application Notes  2N5193 Component  2N5193 Circuit  2N5193 Schematic
 2N5193 Equivalent  2N5193 Cross Reference  2N5193 Data Sheet  2N5193 Fiche Technique

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