All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
2N5193
  2N5193
  2N5193
  2N5193
 
2N5193
  2N5193
  2N5193
  2N5193
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586G
2SA1586O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229O .. 2SC2434
2SC2435 .. 2SC2668Y
2SC2669 .. 2SC2859O
2SC2859Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC400M
2SC400O .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC507R
2SC507Y .. 2SC536SP
2SC537 .. 2SC5813
2SC5819 .. 2SC690
2SC690M .. 2SC89H
2SC90 .. 2SD1063S
2SD1064 .. 2SD1252
2SD1252A .. 2SD1442
2SD1442A .. 2SD1662
2SD1663 .. 2SD1848
2SD1849 .. 2SD2095
2SD2096 .. 2SD2439O
2SD2439P .. 2SD362R
2SD363 .. 2SD588A
2SD589 .. 2SD786
2SD787 .. 2STA2510
2STC2510 .. 40221
40222 .. 40630
40631 .. A177
A178 .. AC556K
AC558 .. AF129
AF130 .. ASY70
ASY70IV .. BC149B
BC149C .. BC237B-92
BC237BP .. BC337-25
BC337-40 .. BC477QF
BC477VI .. BC807-25
BC807-25L .. BC858CLT1
BC858CR .. BCV63
BCV63B .. BCW94K
BCW94KA .. BCY65EPA
BCY65EPB .. BD226-16
BD226-6 .. BD370B-16
BD370B-25 .. BD590
BD591 .. BD940F
BD941 .. BDV93
BDV94 .. BDX85A
BDX85B .. BF225JF
BF226 .. BF422
BF422A .. BF847
BF848 .. BFQ268
BFQ27 .. BFS33P
BFS34 .. BFV88
BFV88A .. BFY69V
BFY69W .. BLX88
BLX89 .. BSS72
BSS72S .. BSX46-6
BSX47 .. BTB1580L3
BTB1580M3 .. BU1508AX
BU1508DX .. BUD48A
BUD48AI .. BUS12B
BUS13 .. BUW46
BUW48 .. BUY64
BUY65 .. CD5918
CD5919 .. CI3397
CI3402 .. CL066P
CL100 .. CPH5517
CPH5518 .. CSA733
CSA733K .. CSC2274D
CSC2274E .. CT764
CT765 .. D29A4
D29A5 .. D41E2
D41E3 .. D62T6560
D62T7030 .. DT1311
DT1312 .. DTB143EC
DTB143EK .. DTL1654
DTL1655 .. ECG228A
ECG229 .. ED1401C
ED1401D .. ESM738T
ESM749 .. FE1718D
FE1718E .. FMA7A
FMA8A .. FN1F4N
FN1F4Z .. FXT3906SM
FXT449 .. GD362
GD363 .. GES929
GES93 .. GS9018
GS9018D .. GT402B
GT402D .. HEPS0015
HEPS0016 .. HSB649A
HSB649T .. IMBT3904
IMBT3905 .. JE9143A
JE9143B .. KRA111M
KRA111S .. KRC104
KRC104M .. KRC853F
KRC853U .. KSB1366
KSB1366G .. KSC3125
KSC3158 .. KSD569O
KSD569R .. KT203A
KT203AM .. KT336G
KT336V .. KT630G
KT630V .. KT815B9
KT815G .. KT9115A
KT9116A .. KTB989
KTC1001 .. KTN2222AE
KTN2222AS .. MCH4009
MCH4013 .. MJ11012
MJ11013 .. MJD47T4
MJD47TF .. MJE6044
MJE6045 .. MMBC1321Q4
MMBC1321Q5 .. MMBT6520L
MMBT6521L .. MP14B
MP14I .. MP5137
MP5138 .. MPS3397
MPS3398 .. MPSH54
MPSH55 .. MRF9511LT1
MRF957T1 .. NA12HG
NA12HH .. NB014EK
NB014EL .. NB212YH
NB212YI .. NKT13429
NKT135 .. NPS5449
NPS5550 .. NTE22
NTE226 .. OC822
OC823 .. PBSS5320T
PBSS5320X .. PMBT2369
PMBT2907 .. PRF949
PRF957 .. RCA1A16
RCA1A17 .. RN16J1
RN1701 .. RN2901AFS
RN2901FE .. S1770
S1784 .. SDT9303
SDT9304 .. SJ5436
SJ5437 .. SRA2219EF
SRA2219M .. STC5554
STC5555 .. SZD31CNPN
SZD31CPNP .. TA2511
TA2512 .. TIP145
TIP145F .. TIS45
TIS47 .. TN4122
TN4123 .. TP930A
TP930R .. UN1110S
UN1111 .. UN921BJ
UN921CJ .. ZT404P
ZT41 .. ZTX4403K
ZTX4403L .. ZXTP558L
ZXTP717MA .. ZXTPS720MC
 
2N5193 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N5193 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N5193

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 40

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 4

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 2

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of 2N5193 transistor: TO126

2N5193 Equivalent Transistors - Cross-Reference Search

2N5193 PDF doc:

1.1. 2n5193_2n5194_2n5195.pdf Size:42K _jmnic

2N5193
2N5193
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5193 2N5194 2N5195 DESCRIPTION · ·With TO-126 package ·Complement to type 2N5190,2N5191,2N5192 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N5193 -40 VCBO Collector-base voltage 2N5194 Open emitter -60 V 2N5195 -80 2N5193 -40 VCEO Collector-emitter voltage 2N5194 Open base -60 V 2N5195 -80 VEBO Emitter-base voltage Open collector -5 V IC Collector current -4 A ICM Collector current-Peak -7 A IB Base current -1 A PD Total power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 3.12 ?/W JMnic Product Specification ww

1.2. 2n5193_2n5194_2n5195.pdf Size:118K _inchange_semiconductor

2N5193
2N5193
Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2N5190/5191/5192 Ў¤ Excellent safe operating area APPLICATIONS Ў¤ For use in medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2N5193 2N5194 2N5195 Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage CHA 2N5193 2N5194 Open emitter VCEO Collector-emitter voltage VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current IN NG S 2N5193 2N5194 2N5195 2N5195 Open base CON EMI TOR DUC VALUE -40 -60 -80 -40 -60 -80 -5 -4 -7 -1 UNIT V V Open collector V A A A W Ўж Ўж Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25Ўж 40 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAME

5.1. 2n5194_2n5195.pdf Size:212K _motorola

2N5193
2N5193
Order this document MOTOROLA by 2N5194/D SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE IIIIIIIIIIIIIIIIIIIIIII POWER TRANSISTORS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIII IIII SILICON PNP IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIIIIIIIII IIII III 6080 VOLTS IIIII IIII IIIII IIII *MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIII IIII IIIII IIII IIIII IIII Rating Symbol 2N5194 2N5195 Unit IIIIIIIIIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIII IIIII IIII IIIII IIII IIIII IIII CollectorEmitter Voltage VCEO IIIIIIIVdc 60 80 IIIIIIIIIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIIIIIIIII IIIIIII IIIII IIIII III IIIII IIII IIIII IIII CollectorBase Vol

5.2. 2n5191_2n5192.pdf Size:217K _motorola

2N5193
2N5193
Order this document MOTOROLA by 2N5191/D SEMICONDUCTOR TECHNICAL DATA 2N5191 2N5192* Silicon NPN Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, excellent safe area limits. Complement to PNP 2N5194, 2N5195. 4 AMPERE IIIIIIIIIIIIIIIIIIIIIII POWER TRANSISTORS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIII IIII SILICON NPN IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIIIIIIIII IIII III 6080 VOLTS IIIII IIII IIIII IIII *MAXIMUM RATINGS 40 WATTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIII IIII IIIII IIII IIIII IIII Rating Symbol 2N5191 2N5192 Unit IIIIIIIIIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIII IIIII IIII IIIII IIII IIIII IIII CollectorEmitter Voltage VCEO IIIIIIIVdc 60 80 IIIIIIIIIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIIIIIIIII IIIIIII IIIII IIIII III IIIII IIII IIIII IIII Collect

5.3. 2n5195.pdf Size:206K _st

2N5193
2N5193
2N5195 Low voltage PNP power transistor Features Low saturation voltage PNP transistor Application Audio, power linear and switching equipment 1 2 Description 3 SOT-32 The device is manufactured in planar technology with base island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The Figure 1. Internal schematic diagram NPN type is the 2N5192. Table 1. Devices summary Order code Marking Package Packaging 2N5195 2N5195 SOT-32 Tube November 2009 Doc ID 5074 Rev 4 1/9 www.st.com 9 Electrical ratings 2N5195 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) -80 V VCEO Collector-emitter voltage (IB = 0) -80 V VEBO Emitter-base voltage (IC = 0) -5 V IC Collector current -4 A ICM Collector peak current -7 A IB Base current -1 A PTOT Total dissipation at Tcase = 25 C 40 W TSTG Storage temperature -65 to 150 C TJ

5.4. 2n5191_2n5192.pdf Size:230K _st

2N5193
2N5193
2N5191 2N5192 NPN power transistors Features NPN transistors Applications Linear and switching industrial equipment Description 1 2 The devices are manufactured in Planar 3 technology with Base Island layout. The SOT-32 resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type of 2N5192 is 2N5195. Figure 1. Internal schematic diagram Table 1. Devices summary Order code Marking Package Packaging 2N5191 2N5191 SOT-32 Tube 2N5192 2N5192 SOT-32 Tube June 2007 Rev 3 1/9 www.st.com 9 Electrical ratings 2N5191 2N5192 1 Electrical ratings Table 2. Absolute maximum rating Value Symbol Parameter Unit 2N5191 2N5192 VCBO Collector-base voltage (IE = 0) 60 80 V VCEO Collector-base voltage (IB = 0) 60 80 V VEBO Emitter-base voltage (IC = 0) 5 V IC Collector current 4 A ICM Collector peak current 7 A IB Base current 1 A PTOT Total dissipation at Tcase = 25C 40 W Tstg Storage temperature -65 to 150

5.5. 2n5196_2n5197_2n5198_2n5199.pdf Size:65K _vishay

2N5193
2N5193
2N5196/5197/5198/5199 Vishay Siliconix Monolithic N-Channel JFET Duals PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 VGS2j Max (mV) 2N5196 0.7 to 4 50 1 15 5 2N5197 0.7 to 4 50 1 15 5 2N5198 0.7 to 4 50 1 15 10 2N5199 0.7 to 4 50 1 15 15 FEATURES BENEFITS APPLICATIONS D Monolithic Design D Tight Differential Match vs. Current D Wideband Differential Amps D High Slew Rate D Improved Op Amp Speed, Settling Time D High-Speed, Temp-Compensated, Accuracy Single-Ended Input Amps D Low Offset/Drift Voltage D Minimum Input Error/Trimming Requirement D High Speed Comparators D Low Gate Leakage: 5 pA D Insignificant Signal Loss/Error Voltage D Impedance Converters D Low Noise D High System Sensitivity D High CMRR: 100 dB D Minimum Error with Large Input Signal DESCRIPTION The 2N5196/5197/5198/5199 JFET duals are designed for The hermetically-sealed TO-71 package is available with full high-performance differentia

5.6. 2n5190_2n5191_2n5192.pdf Size:61K _central

2N5193
2N5193
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

5.7. 2n5194_2n5195.pdf Size:86K _onsemi

2N5193
2N5193
2N5194, 2N5195 Preferred Devices Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Complement to NPN 2N5191, 2N5192. http://onsemi.com Features Pb-Free Packages are Available* 4 AMPERE POWER TRANSISTORS IIIIIIIIIIIIIIIIIII MAXIMUM RATINGS (Note 1) PNP SILICON IIIIIIIIIIIIIIIIIII IIIIIIIIIII III II III IIII Rating Symbol 2N5194 2N5195 Unit 60 - 80 VOLTS IIIIIIIIIII III II IIIIIIIIIII III II III IIII III IIII Collector-Emitter Voltage VCEO 60 80 Vdc IIIIIIIIIII III II IIIIIIIIIII III II III IIII III IIII Collector-Base Voltage VCB 60 80 Vdc IIIIIIIIIII III II IIIIIIIIIII IIIIII III II III IIII Emitter-Base Voltage VEB 5.0 Vdc IIIIIIIIIII IIIIII III II IIIIIIIIIII IIIIII III II Collector Current IC 4.0 Adc IIIIIIIIIII IIIIII IIIIIIIIIII IIIIII III II III II Base Current IB 1.0 Adc IIIIIIIIIII IIIIII IIIIIIIIIII IIIIII III II III II Total Device Dissipatio

5.8. 2n5190_2n5191_2n5192.pdf Size:84K _onsemi

2N5193
2N5193
2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com Features ESD Ratings: Machine Model, C; > 400 V 4.0 AMPERES Human Body Model, 3B; > 8000 V NPN SILICON Epoxy Meets UL 94 V-0 @ 0.125 in. POWER TRANSISTORS Pb-Free Packages are Available* 40, 60, 80 VOLTS - 40 WATTS MAXIMUM RATINGS Rating Symbol Value Unit TO-225AA Collector-Emitter Voltage 2N5190 VCEO 40 Vdc CASE 77 2N5191 60 STYLE 1 2N5192 80 Collector-Base Voltage 2N5190 VCBO 40 Vdc 3 2N5191 60 2 1 2N5192 80 Emitter-Base Voltage VEBO 5.0 Vdc MARKING DIAGRAM Collector Current IC 4.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25C PD 40 W YWW Derate above 25C 320 mW/C 2 N519xG Operating and Storage Junction TJ, Tstg 65 to +150 C Temperature Range THERMAL CHARACTERISTICS Y = Year WW = Work Week Characte

5.9. 2n5191_92.pdf Size:130K _cdil

2N5193
2N5193
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS 2N5191 2N5192 TO126 Plastic Package E C B Use in Medium Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5191 2N5192 UNIT Collector -Base Voltage VCBO 60 80 V Collector -Emitter Voltage VCEO 60 80 V Emitter Base Voltage VEBO 5V Collector Current IC 4A Collector Peak Current ICM 7A Base Current IB 1A Total Dissipation @ TC<25 ?C Ptot 40 W Junction Temperature Tj 150 ?C Storage Temperature Range Tstg -65 to 150 ?C Thermal Resistance Junction to Case Rth(j-c) 3.12 ?C/W Junction to Ambient Rth(j-a) 100 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector Emitter Sustaining Voltage VCEO*(sus) IC=100mA, IB=0 2N5191 60 - - V 2N5192 80 - - V Collector Cut off Current ICBO VCB=rated VCBO, IE=0 - - 0.1 mA ICEX VCE=rated VCEO

5.10. 2n5190_2n5191_2n5192.pdf Size:42K _jmnic

2N5193
2N5193
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5190 2N5191 2N5192 DESCRIPTION · ·With TO-126 package ·Complement to type 2N5193,2N5194,2N5195 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N5190 40 VCBO Collector-base voltage 2N5191 Open emitter 60 V 2N5192 80 2N5190 40 VCEO Collector-emitter voltage 2N5191 Open base 60 V 2N5192 80 VEBO Emitter-base voltage Open collector 5 V IC Collector current 4 A ICM Collector current-Peak 7 A IB Base current 1 A PD Total power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 3.12 ?/W JMnic Product Specification www.jmnic.co

5.11. 2n5190_2n5191_2n5192.pdf Size:118K _inchange_semiconductor

2N5193
2N5193
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5190 2N5191 2N5192 DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2N5193/5194/5195 Ў¤ Excellent safe operating area APPLICATIONS Ў¤ For use in medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETER 2N5190 VCBO Collector-base voltage VCEO Collector-emitter voltage INC NG S HA 2N5191 2N5192 2N5190 2N5191 2N5192 Open emitter CON EMI CONDITIONS TOR DUC VALUE 40 60 80 40 60 80 UNIT V Open base V VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature Open collector 5 4 7 1 V A A A W Ўж Ўж TC=25Ўж 40 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER T

See also transistors datasheet: 2N5187 , 2N5188 , 2N5189 , 2N518A , 2N519 , 2N5190 , 2N5191 , 2N5192 , AC128 , 2N5194 , 2N5195 , 2N519A , 2N52 , 2N520 , 2N5200 , 2N5201 , 2N5202 .

Keywords

 2N5193 Datasheet  2N5193 Datenblatt  2N5193 RoHS  2N5193 Distributor
 2N5193 Application Notes  2N5193 Component  2N5193 Circuit  2N5193 Schematic
 2N5193 Equivalent  2N5193 Cross Reference  2N5193 Data Sheet  2N5193 Fiche Technique

 

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com