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TIP110 Transistor (IC) Datasheet. Cross Reference Search. TIP110 Equivalent

Type Designator: TIP110

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 50

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 4

Maksimalna temperatura (Tj), Ā°C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 750

Noise Figure, dB: -

Package of TIP110 transistor: TO220

TIP110 Transistor Equivalent Substitute - Cross-Reference Search

TIP110 PDF:

1.1. tip110re.pdf Size:269K _motorola

TIP110
TIP110

Order this document MOTOROLA by TIP110/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power NPN TIP110 Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. TIP111* • High DC Current Gain — hFE = 2500 (Typ) @ IC = 1.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc TIP112* VCEO(sus) = 60 Vdc (Min) — TIP110, TIP115

1.2. tip110,112,115,117.pdf Size:243K _st2

TIP110
TIP110

TIP110/112 TIP115/117 ® COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS 3 2 LINEAR AND SWITCHING INDUSTRIAL 1 EQUIPMENT TO-220 DESCRIPTION The TIP110 and TIP112 are silicon Epitaxial-Base NPN tra

1.3. tip110-118.pdf Size:84K _st2

TIP110
TIP110

TIP110/112 TIP115/117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL 3 2 EQUIPMENT 1 DESCRIPTION TO-220 The TIP110 and TIP112 are silicon epitaxial-base NPN transistors in monoli

1.4. tip110.pdf Size:38K _st2

TIP110
TIP110

TIP110/112 TIP115/117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP110, and TIP112 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in medium power linear and switching applications. 3 2 The complementary PNP types are TIP115,

1.5. tip110.pdf Size:59K _samsung

TIP110
TIP110

NPN EPITAXIAL TIP110/111/112 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN TO-220 MIN h =1000 @ V =4V, I =1A FE CE C LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complementary to TIP115/116/117 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage :TIP110 VCBO 60 V 1.Ba

1.6. tip110_tip111_tip112_to-220.pdf Size:228K _mcc

TIP110
TIP110

MCC Micro Commercial Components TM TIP110/111/112 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • The complementary PNP types are the TIP115/116/117 respectively Silicon NPN • Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) Darlington • Epoxy meets UL

1.7. tip110a.pdf Size:17K _utc

TIP110
TIP110

UTC TIP110A PNP EXPITAXIAL PLANAR TRANSISTOR LOW SATURATION VOLTAGE PNP DARLINGTON TRANSISTOR DESCRIPTION The UTC TIP110A is designed for using in general purpose amplifier and switching applications. FEATURE 1 *Low VCE(sat) *High current gain TO-220 1:BASE 2:COLLECTOR 3:EMITTER MAXIMUM RATINGS(Ta=25°C) CHARACTERISTICS SYMBOL VALUE UNITS Collector Base Voltage VCBO 40 V Collector

1.8. tip110-12_tip115-17.pdf Size:146K _mospec

TIP110
TIP110

A A A

1.9. tip110-117.pdf Size:265K _cdil

TIP110
TIP110

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP110 TIP115 TIP111 TIP116 TIP112 TIP117 NPN PNP TO-220 Plastic Package Intended for use in Medium Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL TIP110/115 TIP111/116 TIP112/117 UNIT VCEO Collector Emitter Voltage 60 80 1

1.10. tip110_111_112.pdf Size:161K _inchange_semiconductor

TIP110
TIP110

Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors DESCRIPTION ŠˇĀ¤ With TO-220C package ŠˇĀ¤ DARLINGTON ŠˇĀ¤ High DC current gain ŠˇĀ¤ Low collector saturation voltage ŠˇĀ¤ Complement to type TIP115/116/117 APPLICATIONS ŠˇĀ¤ For industrial use PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP110/111/112 Absolute ma

1.11. tip110.pdf Size:226K _lge

TIP110
TIP110

TIP110 TO-220 Darlington Transistor (NPN) TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 60 V VCEO Collect

See also transistors datasheet: TI952 , TI953 , TIP100 , TIP101 , TIP102 , TIP105 , TIP106 , TIP107 , 2N2905 , TIP111 , TIP112 , TIP115 , TIP116 , TIP117 , TIP120 , TIP121 , TIP122 .

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