All Transistors. TIP112 Datasheet

 

TIP112 Transistor. Datasheet pdf. Equivalent

Type Designator: TIP112

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO220

TIP112 Transistor Equivalent Substitute - Cross-Reference Search

TIP112 说明书

1.1. tip112l-tn3.pdf Size:184K _update

TIP112
TIP112

UNISONIC TECHNOLOGIES CO., LTD TIP112 NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR DESCRIPTION The UTC TIP112 is designed for such applications as: DC/DC converters supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications (e.g. lamps and LEDs) and inductive load driver (e.g. relays, buzzers and

1.2. tip110_tip111_tip112_to-220.pdf Size:228K _mcc

TIP112
TIP112

MCC Micro Commercial Components TM TIP110/111/112 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features The complementary PNP types are the TIP115/116/117 respectively Silicon NPN Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) Darlington Epoxy meets UL

1.3. tip112.pdf Size:74K _kec

TIP112
TIP112

SEMICONDUCTOR TIP112 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN A BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. R S FEATURES P D High DC Current Gain. DIM MILLIMETERS : hFE=1000(Min.), VCE=4V, IC=1A. A 10.30 MAX B 15.30 MAX Low Collector-Emitter Saturation Voltage. C 0.80 _ + Complementary to TIP117. D ?3.60 0.20 T E 3.00 F 6.70

1.4. tip112f.pdf Size:444K _kec

TIP112
TIP112

SEMICONDUCTOR TIP112F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A C DIM MILLIMETERS S _ FEATURES A 10.0 + 0.3 _ + B 15.0 0.3 E High DC Current Gain. C _ 2.70 0.3 + D 0.76+0.09/-0.05 : hFE=1000(Min.), VCE=4V, IC=1A. _ E ?3.2 0.2 + _ F 3.0 0.3 + Low Collector-Emitter Saturation Voltage.

1.5. tip112.pdf Size:208K _lge

TIP112
TIP112

TIP112 TO-220 Darlington Transistor (NPN) TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 100 V VCEO Col

1.6. htip112.pdf Size:52K _hsmc

TIP112
TIP112

Spec. No. : HE200203 HI-SINCERITY Issued Date : 2000.08.01 Revised Date : 2004.11.19 MICROELECTRONICS CORP. Page No. : 1/5 HTIP112 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP112 is designed for use in general purpose amplifier and low-speed switching applications. Darlington Schematic C Absolute Maximum Ratings (TA=25°C) B • Maximum Temperatures Storage Tempera

Datasheet: TIP100 , TIP101 , TIP102 , TIP105 , TIP106 , TIP107 , TIP110 , TIP111 , AC125 , TIP115 , TIP116 , TIP117 , TIP120 , TIP121 , TIP122 , TIP125 , TIP126 .

 


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