TIP115 Transistor Datasheet. Parameters and Characteristics.

Type Designator: TIP115

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 50

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 4

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 750

Noise Figure, dB: -

Package of TIP115 transistor: TO220

TIP115 Equivalent Transistors - Cross-Reference Search

TIP115 PDF document for downloads:

1.1. tip115.pdf Size:61K _samsung

PNP EPITAXIAL TIP115/116/117 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN TO-220 MIN h =1000 @ V = -4V, I = -1A FE CE C LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complementary to TIP110/111/112 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage :TIP115 VCBO -60 V 1.Base 2.Collector 3.Emitter : TIP116 -80 V : TIP117 -100 V Collector Emitter Voltage :TIP115 VCEO -60 V :TIP116 -80 V :TIP117 -100 V Emitter-Base Voltage VEBO -5 V Collector Current (DC) IC -2 A Collector Current (Pulse) IC -4 A Base Current (DC) IB -50 Collector Dissipation ( TA=5 ) PC 2 W Collector Dissipation ( TC=5 ) PC 50 W Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 ELECTRICAL CHARACTERISTICS (TC =25 ) Characteristic Symbol Test Conditions Min Max Unit Collector Emitter Sustaining Voltage VCEO(sus) IC = -30mA, IB = 0 : TIP115 -60 V

1.2. tip115_tip116_tip117_to-220.pdf Size:373K _mcc

MCC TIP115 Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components TIP116 CA 91311 Phone: (818) 701-4933 TIP117 Fax: (818) 701-4939 Features • High DC Current Gain : hFE=1000 @ VCE=4.0V, IC=1.0A(Min.) • Low Collector-Emitter Saturation Voltage PNP Epitaxial • Complementary to TIP110/111/112 • Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates Silicon Darlington RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating Transistors • Moisure Sensitivity Level 1 Maximum Ratings Symbol Rating Rating Unit TO-220 VCEO Collector-Emitter Voltage TIP115 60 B C TIP116 80 V S F TIP117 100 V Collector-Base Voltage CBO Q TIP115 60 T TIP116 80 V A TIP117 100 VEBO Emitter-Base Voltage 5.0 V U IC Collector Current (DC) 2.0 A ICP Collector Current (Pulse) 4.0 A H IB Base Current (DC) 50 mA Collector Dissipation @TA=25OC 2.0 W PC K Collector Dissipation @T =25OC 50 W C O TJ,

1.3. tip110-12_tip115-17.pdf Size:146K _mospec

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1.4. tip115_116_117.pdf Size:144K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ DARLINGTON Ў¤ High DC current gain Ў¤ Low collector saturation voltage Ў¤ Complement to type TIP110/111/112 APPLICATIONS Ў¤ For industrial use PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP115/116/117 Absolute maximum ratings(Tc=25Ўж ) SYMBOL VCBO IN PARAMETER Collector-base voltage CHA E SEM NG TIP115 TIP116 TIP117 TIP115 TIP116 TIP117 Open base Open emitter OND IC CONDITIONS TOR UC VALUE -60 -80 -100 -60 -80 -100 UNIT V VCEO Collector-emitter voltage V VEBO IC ICM IB PC Emitter-base voltage Collector current-DC Collector current-Pulse Base current-DC Open collector --5 -2 -4 50 V A A mA TC=25Ўж Collector power dissipation Ta=25Ўж Tj Tstg Junction temperature Storage temperature 50 W 2 150 -65~150 Ўж Ўж

See also transistors datasheet: TIP101 , TIP102 , TIP105 , TIP106 , TIP107 , TIP110 , TIP111 , TIP112 , 2SC5200 , TIP116 , TIP117 , TIP120 , TIP121 , TIP122 , TIP125 , TIP126 , TIP127 .

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