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TIP116 Transistor. Datasheet pdf. Equivalent

Type Designator: TIP116

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO220

TIP116 Transistor Equivalent Substitute - Cross-Reference Search

TIP116 Datasheet PDF:

1.1. tip115_tip116_tip117_to-220.pdf Size:373K _mcc

TIP116
TIP116

MCC TIP115 Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components TIP116 CA 91311 Phone: (818) 701-4933 TIP117 Fax: (818) 701-4939 Features High DC Current Gain : hFE=1000 @ VCE=4.0V, IC=1.0A(Min.) Low Collector-Emitter Saturation Voltage PNP Epitaxial Complementary to TIP110/111/112 Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix d

5.1. tip117_3ca117.pdf Size:274K _update

TIP116
TIP116

TIP117(3CA117) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于中功率线性开关放大。 Purpose: Medium power linear switching applications. 特点:与 TIP112(3DA112)互补。 Features: Complement to TIP112(3DA112). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V EBO

5.2. tip112l-tn3.pdf Size:184K _update

TIP116
TIP116

UNISONIC TECHNOLOGIES CO., LTD TIP112 NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR DESCRIPTION The UTC TIP112 is designed for such applications as: DC/DC converters supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications (e.g. lamps and LEDs) and inductive load driver (e.g. relays, buzzers and

5.3. tip110a.pdf Size:100K _update

TIP116
TIP116

UNISONIC TECHNOLOGIES CO., LTD TIP110A Preliminary PNP SILICON TRANSISTOR LOW SATURATION VOLTAGE PNP DARLINGTON TRANSISTOR DESCRIPTION The UTC TIP110A is designed for using in general purpose amplifier and switching applications. FEATURES * Low VCE(SAT) * High Current Gain ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Fre

5.4. tip110re.pdf Size:269K _motorola

TIP116
TIP116

Order this document MOTOROLA by TIP110/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power NPN TIP110 Complementary Silicon Transistors . . . designed for generalpurpose amplifier and lowspeed switching applications. TIP111* High DC Current Gain hFE = 2500 (Typ) @ IC = 1.0 Adc CollectorEmitter Sustaining Voltage @ 30 mAdc TIP112* VCEO(sus) = 60 Vdc (Min) TIP110, TIP115

5.5. tip110,112,115,117.pdf Size:243K _st2

TIP116
TIP116

TIP110/112 TIP115/117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS 3 2 LINEAR AND SWITCHING INDUSTRIAL 1 EQUIPMENT TO-220 DESCRIPTION The TIP110 and TIP112 are silicon Epitaxial-Base NPN tra

5.6. tip110-118.pdf Size:84K _st2

TIP116
TIP116

TIP110/112 TIP115/117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL 3 2 EQUIPMENT 1 DESCRIPTION TO-220 The TIP110 and TIP112 are silicon epitaxial-base NPN transistors in monoli

5.7. tip110.pdf Size:38K _st2

TIP116
TIP116

TIP110/112 TIP115/117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP110, and TIP112 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in medium power linear and switching applications. 3 2 The complementary PNP types are TIP115,

5.8. tip110.pdf Size:59K _samsung

TIP116
TIP116

NPN EPITAXIAL TIP110/111/112 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN TO-220 MIN h =1000 @ V =4V, I =1A FE CE C LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complementary to TIP115/116/117 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage :TIP110 VCBO 60 V 1.Ba

5.9. tip115.pdf Size:61K _samsung

TIP116
TIP116

PNP EPITAXIAL TIP115/116/117 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN TO-220 MIN h =1000 @ V = -4V, I = -1A FE CE C LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complementary to TIP110/111/112 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage :TIP115 VCBO -60 V

5.10. tip110_tip111_tip112_to-220.pdf Size:228K _mcc

TIP116
TIP116

MCC Micro Commercial Components TM TIP110/111/112 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features The complementary PNP types are the TIP115/116/117 respectively Silicon NPN Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) Darlington Epoxy meets UL

5.11. tip110a.pdf Size:17K _utc

TIP116
TIP116

UTC TIP110A PNP EXPITAXIAL PLANAR TRANSISTOR LOW SATURATION VOLTAGE PNP DARLINGTON TRANSISTOR DESCRIPTION The UTC TIP110A is designed for using in general purpose amplifier and switching applications. FEATURE 1 *Low VCE(sat) *High current gain TO-220 1:BASE 2:COLLECTOR 3:EMITTER MAXIMUM RATINGS(Ta=25C) CHARACTERISTICS SYMBOL VALUE UNITS Collector Base Voltage VCBO 40 V Collector

5.12. tip110-12_tip115-17.pdf Size:146K _mospec

TIP116
TIP116

A A A

5.13. tip110-117.pdf Size:265K _cdil

TIP116
TIP116

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP110 TIP115 TIP111 TIP116 TIP112 TIP117 NPN PNP TO-220 Plastic Package Intended for use in Medium Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL TIP110/115 TIP111/116 TIP112/117 UNIT VCEO Collector Emitter Voltage 60 80 1

5.14. tip117.pdf Size:75K _kec

TIP116
TIP116

SEMICONDUCTOR TIP117 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN A BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. R S FEATURES P D High DC Current Gain. DIM MILLIMETERS : hFE=1000(Min.), VCE=-4V, IC=-1A. A 10.30 MAX B 15.30 MAX Low Collector-Emitter Saturation Voltage. C 0.80 _ + Complementary to TIP112. D ?3.60 0.20 T E 3.00 F 6.

5.15. tip112.pdf Size:74K _kec

TIP116
TIP116

SEMICONDUCTOR TIP112 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN A BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. R S FEATURES P D High DC Current Gain. DIM MILLIMETERS : hFE=1000(Min.), VCE=4V, IC=1A. A 10.30 MAX B 15.30 MAX Low Collector-Emitter Saturation Voltage. C 0.80 _ + Complementary to TIP117. D ?3.60 0.20 T E 3.00 F 6.70

5.16. tip112f.pdf Size:444K _kec

TIP116
TIP116

SEMICONDUCTOR TIP112F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A C DIM MILLIMETERS S _ FEATURES A 10.0 + 0.3 _ + B 15.0 0.3 E High DC Current Gain. C _ 2.70 0.3 + D 0.76+0.09/-0.05 : hFE=1000(Min.), VCE=4V, IC=1A. _ E ?3.2 0.2 + _ F 3.0 0.3 + Low Collector-Emitter Saturation Voltage.

5.17. tip117f.pdf Size:445K _kec

TIP116
TIP116

SEMICONDUCTOR TIP117F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A C DIM MILLIMETERS S _ FEATURES A 10.0 + 0.3 _ + B 15.0 0.3 E High DC Current Gain. C _ 2.70 0.3 + D 0.76+0.09/-0.05 : hFE=1000(Min.), VCE=-4V, IC=-1A. _ E ?3.2 0.2 + _ F 3.0 0.3 + Low Collector-Emitter Saturation Voltage

5.18. tip110_111_112.pdf Size:161K _inchange_semiconductor

TIP116
TIP116

Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ DARLINGTON Ў¤ High DC current gain Ў¤ Low collector saturation voltage Ў¤ Complement to type TIP115/116/117 APPLICATIONS Ў¤ For industrial use PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP110/111/112 Absolute ma

5.19. tip115_116_117.pdf Size:144K _inchange_semiconductor

TIP116
TIP116

Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ DARLINGTON Ў¤ High DC current gain Ў¤ Low collector saturation voltage Ў¤ Complement to type TIP110/111/112 APPLICATIONS Ў¤ For industrial use PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP115/116/117 Absolute ma

5.20. tip110.pdf Size:226K _lge

TIP116
TIP116

TIP110 TO-220 Darlington Transistor (NPN) TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 60 V VCEO Collect

5.21. tip111.pdf Size:202K _lge

TIP116
TIP116

TIP111 TO-220 Darlington Transistor (NPN) 1. BASE TO-220 2. COLLECTOR 3. EMITTER 3 2 1 Features High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V Dimensions in inches and (millimeters) VCEO C

5.22. tip112.pdf Size:208K _lge

TIP116
TIP116

TIP112 TO-220 Darlington Transistor (NPN) TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 100 V VCEO Col

5.23. htip112.pdf Size:52K _hsmc

TIP116
TIP116

Spec. No. : HE200203 HI-SINCERITY Issued Date : 2000.08.01 Revised Date : 2004.11.19 MICROELECTRONICS CORP. Page No. : 1/5 HTIP112 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP112 is designed for use in general purpose amplifier and low-speed switching applications. Darlington Schematic C Absolute Maximum Ratings (TA=25°C) B • Maximum Temperatures Storage Tempera

5.24. htip117.pdf Size:43K _hsmc

TIP116
TIP116

Spec. No. : HE200204 HI-SINCERITY Issued Date : 2000.08.01 Revised Date : 2004.11.19 MICROELECTRONICS CORP. Page No. : 1/4 HTIP117 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP117 is designed for use in general purpose amplifier and low-speed switching applications. Darlington Schematic C Absolute Maximum Ratings (TA=25°C) B • Maximum Temperatures Storage Tempera

Datasheet: TIP102 , TIP105 , TIP106 , TIP107 , TIP110 , TIP111 , TIP112 , TIP115 , 2N4403 , TIP117 , TIP120 , TIP121 , TIP122 , TIP125 , TIP126 , TIP127 , TIP130 .

 


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