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TIP117 Transistor (IC) Datasheet. Cross Reference Search. TIP117 Equivalent

Type Designator: TIP117

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 50

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 4

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 750

Noise Figure, dB: -

Package of TIP117 transistor: TO220

TIP117 Transistor Equivalent Substitute - Cross-Reference Search

TIP117 PDF:

1.1. tip117_3ca117.pdf Size:274K _update

TIP117
TIP117

TIP117(3CA117) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于中功率线性开关放大。 Purpose: Medium power linear switching applications. 特点:与 TIP112(3DA112)互补。 Features: Complement to TIP112(3DA112). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V EBO

1.2. tip115_tip116_tip117_to-220.pdf Size:373K _mcc

TIP117
TIP117

MCC TIP115 Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components TIP116 CA 91311 Phone: (818) 701-4933 TIP117 Fax: (818) 701-4939 Features High DC Current Gain : hFE=1000 @ VCE=4.0V, IC=1.0A(Min.) Low Collector-Emitter Saturation Voltage PNP Epitaxial Complementary to TIP110/111/112 Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix d

1.3. tip117.pdf Size:75K _kec

TIP117
TIP117

SEMICONDUCTOR TIP117 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN A BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. R S FEATURES P D High DC Current Gain. DIM MILLIMETERS : hFE=1000(Min.), VCE=-4V, IC=-1A. A 10.30 MAX B 15.30 MAX Low Collector-Emitter Saturation Voltage. C 0.80 _ + Complementary to TIP112. D ?3.60 0.20 T E 3.00 F 6.

1.4. tip117f.pdf Size:445K _kec

TIP117
TIP117

SEMICONDUCTOR TIP117F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A C DIM MILLIMETERS S _ FEATURES A 10.0 + 0.3 _ + B 15.0 0.3 E High DC Current Gain. C _ 2.70 0.3 + D 0.76+0.09/-0.05 : hFE=1000(Min.), VCE=-4V, IC=-1A. _ E ?3.2 0.2 + _ F 3.0 0.3 + Low Collector-Emitter Saturation Voltage

1.5. htip117.pdf Size:43K _hsmc

TIP117
TIP117

Spec. No. : HE200204 HI-SINCERITY Issued Date : 2000.08.01 Revised Date : 2004.11.19 MICROELECTRONICS CORP. Page No. : 1/4 HTIP117 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP117 is designed for use in general purpose amplifier and low-speed switching applications. Darlington Schematic C Absolute Maximum Ratings (TA=25°C) B • Maximum Temperatures Storage Tempera

See also transistors datasheet: TIP105 , TIP106 , TIP107 , TIP110 , TIP111 , TIP112 , TIP115 , TIP116 , BF199 , TIP120 , TIP121 , TIP122 , TIP125 , TIP126 , TIP127 , TIP130 , TIP131 .

Search Terms:

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