All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
TIP30
  TIP30
  TIP30
 
TIP30
  TIP30
  TIP30
 
TIP30
  TIP30
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU433
BU4508AF .. BUL50B
BUL510 .. BUV18X
BUV19 .. BUX62
BUX63 .. C5T4997
C5T5400 .. CDQ10053
CDQ10054 .. CIL769
CIL771 .. CMMT495
CMMT551 .. CS718A
CS720A .. CSB772E
CSB772P .. CSD1047OF
CSD1047YF .. CZD1952
CZD2983 .. D38L4
D38L4-6 .. D44TD3
D44TD4 .. DC5441
DC5442 .. DTA114YCA
DTA114YE .. DTC124XCA
DTC124XE .. DW7039
DW7050 .. ECG324
ECG325 .. ERS275
ERS301 .. F121
F121A .. FJP3305
FJP3307D .. FMMT4250
FMMT4250A .. FT2384
FT2551 .. FZTA14
FZTA42 .. GES3962
GES4058 .. GFT25R
GFT31 .. GT250/8C
GT250/8D .. HA7207
HA7501 .. HMBTH10
HMJE13001 .. HUN2237
HUN2238 .. JC501P
JC501Q .. KDY24
KDY25 .. KRA721E
KRA721F .. KRC651U
KRC652E .. KSA1625L
KSA1625M .. KSC2334-Y
KSC2335 .. KSD1588-O
KSD1588-R .. KSR1011
KSR1012 .. KT3140V
KT3142A .. KT603D
KT603E .. KT8110V
KT8112A .. KT838B
KT839A .. KTA1517
KTA1517S .. KTC5001L
KTC5027 .. MA0491
MA0492 .. ME8002
ME8003 .. MJ480
MJ481 .. MJE3312
MJE3370 .. MM3725
MM3726 .. MMBT4141
MMBT4142 .. MMUN2113LT1
MMUN2113LT2 .. MP3638
MP3638A .. MPQ4888
MPQ4889 .. MPS6602
MPS6651 .. MRF243
MRF244 .. MUN5311DW
MUN5311DW1 .. NA42WG
NA42WH .. NB121F
NB121FH .. NB312Z
NB313E .. NPS3564
NPS3565 .. NSS12100UW
NSS12100XV6T1G .. OC410
OC41N .. PBSS301ND
PBSS301NX .. PDTC144VU
PDTC144WE .. PN3725
PN3742 .. PZT195A
PZT2222A .. RN1113CT
RN1113FS .. RN2118MFV
RN2119MFV .. RS-2013
RS1049 .. SCE540
SCH2202 .. SFT317
SFT319 .. SQ2222A
SQ2222AF .. ST5771-2
ST6008 .. SUR539J
SUR540EF .. T2580
T2588 .. TI459
TI460 .. TIP642
TIP645 .. TN2907
TN2907A .. TP3827
TP3866 .. UMB1N
UMB2N .. UN6113
UN6114 .. ZDT694
ZDT749 .. ZTX321M
ZTX322 .. ZXTN2010A
ZXTN2010G .. ZXTPS720MC
 
TIP30 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

TIP30 Transistor Datasheet. Parameters and Characteristics.

Type Designator: TIP30

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 30

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 1

Maksimalna temperatura (Tj), Ā°C: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of TIP30 transistor: TO220

TIP30 Equivalent Transistors - Cross-Reference Search
Warning: file_get_contents(/var/www/admin/www/alltransistors.com/pdfdatasheet_fairchild_semi/text/tip30_tip30a_tip30b_tip30c.txt): failed to open stream: No such file or directory in /var/www/admin/www/alltransistors.com/transistor.php on line 134

TIP30 PDF doc:

1.1. tip3055r.pdf Size:104K _motorola

TIP30
TIP30
Order this document MOTOROLA by TIP3055/D SEMICONDUCTOR TECHNICAL DATA NPN TIP3055 Complementary Silicon Power PNP TIP2955 Transistors . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20–70 @ IC = 4.0 Adc 15 AMPERE • Collector–Emitter Saturation Voltage — VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc IIIIIIIIIIIIIIIIIIIIIII POWER TRANSISTORS • Excellent Safe Operating Area IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIII IIIII III COMPLEMENTARY IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII SILICON IIIII III IIIII III MAXIMUM RATINGS 60 VOLTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII IIIII III IIIII III IIIII III Rating Symbol Value Unit 90 WATTS IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII IIIII III IIIII III IIIII III IIIII III Collector–Emitter Voltage VCEO 60 Vdc IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII II

1.2. tip2955_tip3055.pdf Size:87K _st2

TIP30
TIP30
TIP2955 TIP3055 Complementary power transistors Features ¦ Low collector-emitter saturation voltage ¦ Complementary NPN - PNP transistors Applications ¦ General purpose ¦ Audio Amplifier 3 2 1 Description TO-247 The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Figure 1. Internal schematic diagrams Table 1. Device summary Order code Marking Package Packaging TIP2955 TIP2955 TO-247 tube TIP3055 TIP3055 March 2008 Rev 5 1/7 . www.st.com 7 Absolute maximun rating TIP2955 - TIP3055 1 Absolute maximun rating Table 2. Absolute maximum rating Symbol Parameter Value Unit NPN TIP3055 PNP TIP2955 VCBO Collector-emitter voltage (IE = 0) 100 V VCER Collector-emitter voltage (RBE = 100 ?) 70 V VCEO Collector-emitter voltage (IB = 0) 60 V VEBO Collector-base voltage (IC = 0) 7V IC Collector current 15 A IB Base current 7 A Ptot Total dissipation at Tc ?25°C 90 W Ts

1.3. tip29a-29c,tip30a-30c.pdf Size:51K _st2

TIP30
TIP30
TIP29A/29C TIP30A/30C ® COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The TIP29A and TIP29C are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in medium power linear and switching 3 2 applications. 1 The complementary PNP types are TIP30A and TIP30C respectively. TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN TIP29A TIP29C PNP TIP30A TIP30C VCBO Collector-Base Voltage (IE = 0) 60 100 V VCEO Collector-Emitter Voltage (IB = 0) 60 100 V VEBO Emitter-Base Voltage (IC = 0) 5 V I Collector Current 1 A C I Collector Peak Current 3 A CM I Base Current 0.4 A B Ptot Total Dissipation at Tcase ? 25 oC 30 W 2 W Tamb ? 25 oC o T Storage Temperature -65 to 150 C stg o Tj Max. Operating Junction Temperature 150 C For PNP types voltage and current values are negative.

1.4. tip30_tip30a_tip30b_tip30c.pdf Size:527K _fairchild_semi

TIP30
TIP30

1.5. tip30.pdf Size:49K _samsung

TIP30
TIP30
TIP30 SERIES (TIP30/30A/30B/30C) PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR TO-220 SWITCHING APPLICATIONS • Complement to TIP29/29A/29B/29C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage : TIP30 VCBO - 40 V : TIP30A - 60 V : TIP30B - 80 V : TIP30C - 100 V Collector Emitter Voltage : TIP30 VCEO - 40 V : TIP30A - 60 V : TIP30B - 80 V 1.Base 2.Collector 3.Emitter : TIP30C - 100 V Emitter-Base Voltage VEBO - 5 V Collector Current (DC) IC - 1 A Collector Current (Pulse) IC - 3 A Base Current IB - 0.4 A Collector Dissipation ( TC=25 ) PC 30 W Collector Dissipation ( TA=25 ) PC 2 W Junction Temperature TJ 150 Storage Temperature TSTG - 65 ~ 150 ELECTRICAL CHARACTERISTICS (TC =25 ) Characteristic Symbol Test Conditions Min Max Unit *Collector Emitter Sustaining Voltage : TIP30 BVCEO(sus) IC = -30mA, IB = 0 -40 V : TIP30A -60 V : TIP30B -80 V : TIP30C -100 V Collector Cutoff Current : TIP30/30A ICE

1.6. tip30-a-b-c.pdf Size:66K _central

TIP30
TIP30
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.7. tip29-a-b-c_tip30-a-b-c_to-220.pdf Size:247K _mcc

TIP30
TIP30
MCC Micro Commercial Components TM TIP29,A,B,C(NPN) 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 TIP30,A,B,C(PNP) Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates 1.0 Amp RoHS Compliant. See ordering information) Complementary • Marking: Type Number • Rth(jc) is 4.167OC/W, Rth(ja) is 62.5OC/W Silicon Power • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 Transistors Maximum Ratings Symbol Rating Rating Unit TIP29, TIP30 40 VCEO Collector-Emitter Voltage TIP29A, TIP30A 60 V TO-220 TIP29B, TIP30B 80 VCBO Collector-Base Voltage TIP29C, TIP30C 100 VEB Emitter-Base Voltage 5.0 V B C IC Collector Current- Continuous 1.0 S A F Peak(1) 3.0 IB Base Current-Continuous 0.4 A Q P Total power dissipation @T =25OC 30 W D C T Derate above 25OC 0.24 W/OC O A T , Junction Temperature -55 to +150 C J O TSTG Storage Temperature -55 to

1.8. tip29-a-b-c_tip30-a-b-c.pdf Size:83K _onsemi

TIP30
TIP30
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO-220 AB package. http://onsemi.com Features 1 AMPERE • Pb-Free Packages are Available* POWER TRANSISTORS COMPLEMENTARY SILICON 40, 60, 80, 100 VOLTS, 80 WATTS MARKING DIAGRAM 4 TO-220AB TIPxxxG CASE 221A AYWW STYLE 1 1 2 3 TIPxxx = Device Code: 29, 29A, 29B, 29C 30, 30A, 30B, 30C A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: November, 2007 - Rev. 9 TIP29B/D TIP29, A, B, C (

1.9. tip3055_tip2955.pdf Size:61K _onsemi

TIP30
TIP30
TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors Designed for general-purpose switching and amplifier applications. http://onsemi.com Features • DC Current Gain - 15 AMPERE hFE = 20 - 70 @ IC POWER TRANSISTORS = 4.0 Adc COMPLEMENTARY SILICON • Collector-Emitter Saturation Voltage - 60 VOLTS, 90 WATTS VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc • Excellent Safe Operating Area • Pb-Free Packages are Available* MAXIMUM RATINGS IIIIIIIIIIIIIIIIIII Rating Symbol Value Unit IIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III III SOT-93 (TO-218) CASE 340D Collector - Emitter Voltage VCEO 60 Vdc IIIIIIIIIIII IIII IIIIIIIIIIII IIII III III III III STYLE 1 Collector - Emitter Voltage VCER 70 Vdc IIIIIIIIIIII IIII IIIIIIIIIIII IIII III III III III Collector - Base Voltage VCB 100 Vdc IIIIIIIIIIII IIII IIIIIIIIIIII IIII III III III III Emitter - Base Voltage VEB 7.0 Vdc IIIIIIIIIIII IIII IIIIIIIIIIII IIII III III III III MARKING DIAGRAM Co

1.10. tip3055.pdf Size:82K _bourns

TIP30
TIP30
TIP3055 NPN SILICON POWER TRANSISTOR ? Designed for Complementary Use with the SOT-93 PACKAGE TIP2955 Series (TOP VIEW) ? 90 W at 25°C Case Temperature B 1 ? 15 A Continuous Collector Current C 2 ? Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT Collector-base voltage (IE = 0) VCBO 100 V Collector-emitter voltage (IB = 0) (see Note 1) VCER 70 V Emitter-base voltage VEBO 7V Continuous collector current IC 15 A Continuous base current IB 7A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 90 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 3.5 W Unclamped inductive load energy (see Note 4) ?LIC2 62.5 mJ Operating junction temperature range Tj -65 to +150 °C Storage temperature range Tstg -65 to +150 °C Lead temperature 3.2 mm fro

1.11. tip29_tip30.pdf Size:145K _mospec

TIP30
TIP30
A A A

1.12. tip2955_tip3055.pdf Size:107K _mospec

TIP30
TIP30
A A A

1.13. tip29_tip30_a_b_c.pdf Size:311K _cdil

TIP30
TIP30
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP29, A, B, C NPN TIP30, A, B, C PNP TO-220 Plastic Package Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers ABSOLUTE MAXIMUM RATINGS (Ta=25?C) TIP29 TIP29A TIP29B TIP29C DESCRIPTION SYMBOL UNIT TIP30 TIP30A TIP30B TIP30C VCEO Collector Emitter (sus) Voltage 40 60 80 100 V Collector Base Voltage VCBO 40 60 80 100 V Emitter Base Voltage VEBO 5.0 V Collector Current Continuous IC 1.0 A ICM Collector Current Peak 3.0 A IB Base Current 0.4 A Power Dissipation upto Tc=25?C PD 30 W Power Dissipation upto Ta=25?C PD 2.0 W Derate above 25?C 16 mW/?C Tstg Storage Temperature - 65 to +150 ?C Tj Junction Temperature 150 ?C THERMAL RESISTANCE Junction to Case Rth (j-c) 4.167 ?C/W Rth (j-a) Junction to Ambient in free air 6

1.14. tip2955f_tip3055f.pdf Size:290K _cdil

TIP30
TIP30
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS TIP2955F PNP TIP3055F NPN TO- 3P Fully Isolated Plastic Package B C E Designed for General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector-Emitter Voltage VCEO 60 V Collector-Emitter Voltage VCER 70 V Collector-Base Voltage VCB 100 V Emitter-Base Voltage VEB 7.0 V Collector Current - Continuous IC 15 A Base Current IB 7.0 A Total Power Dissipation upto Tc=25? C PD 90 W Derate above 25? C 0.72 W/ ?C Tj, Tstg Operating And Storage Junction - 65 to +150 ?C Temperature Range THERMAL RESISTANCE From Junction to case Rth (jc) 1.39 ?C/W Rth (ja) From Junction to Ambient 35.7 ?C/W ELECTRICAL CHARACTERISTICS (Tc=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector-Emitter Sustaining Voltage VCEO(sus) * IC = 30 mA, IB = 0 60 V Collector Cutoff Current ICE

1.15. tip30.pdf Size:82K _inchange_semiconductor

TIP30
TIP30
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP30 DESCRIPTION Ā·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min) Ā·Collector-Emitter Saturation Voltage- : VCE(sat) = -0.7V(Max.)@IC= -1.0A Ā·Complement to Type TIP29 APPLICATIONS Ā·Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-base Voltage -40 V VCEO Collector-emitter Voltage -40 V VEBO Emitter-base Voltage -5 V IC Collector Current-Continuous -1 A ICM Collector Current-Pulse -3 A IB Base Current -0.4 A Collector Power Dissipation PC 30 w TC=25? Tj Junction Temperature 150 ? Storage Ttemperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 4.17 ?/W Rth j-c Thermal Resistance,Junction to Ambient 62.5 ?/W Rth j-a isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Pr

1.16. tip30_30a_30b_30c.pdf Size:119K _inchange_semiconductor

TIP30
TIP30
Inchange Semiconductor Product Specification Silicon PNP Power Transistors TIP30/30A/30B/30C DESCRIPTION ŠˇĀ¤ With TO-220C package ŠˇĀ¤ Complement to type TIP29/29A/29B/29C APPLICATIONS ŠˇĀ¤ For use in general purpose power amplifer and switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION ŠˇĀ¤ Absolute maximum ratings(Ta=25ŠˇŠ¶ ) SYMBOL PARAMETER CONDITIONS TIP30 TIP30A TIP30B VCBO Collector-base voltage VCEO HAN INC Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Pulse Base current SEM GE Open emitter TIP30C TIP30 TIP30A Open base TIP30B TIP30C OND IC TOR UC VALUE -40 -60 -80 -100 -40 -60 UNIT V V -80 -100 VEBO IC ICM IB PC Tj Tstg Open collector -5 -1 -3 -0.4 V A A A w ŠˇŠ¶ ŠˇŠ¶ Collector power dissipation Junction temperature Storage temperature TC=25ŠˇŠ¶ 30 150 -65~150

1.17. tip3055.pdf Size:142K _inchange_semiconductor

TIP30
TIP30
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ŠˇĀ¤ With TO-3PN package ŠˇĀ¤ Complement to type TIP2955 ŠˇĀ¤ 90 W at 25Ā°C case temperature ŠˇĀ¤ 15 A continuous collector current APPLICATIONS ŠˇĀ¤ Designed for generalĀ­purpose switching and amplifier applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP3055 Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=ŠˇŠ¶ ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage PARAMETER INC Collector-emitter voltage Emitter-base voltage ANG H E SEM Open base Open emitter OND IC CONDITIONS TOR UC VALUE 100 60 7 15 7 UNIT V V V A A W ŠˇŠ¶ ŠˇŠ¶ Open collector Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25ŠˇŠ¶ 90 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to

See also transistors datasheet: TIP29 , TIP2955 , TIP29A , TIP29B , TIP29C , TIP29D , TIP29E , TIP29F , BD135 , TIP3054 , TIP3055 , TIP30A , TIP30B , TIP30C , TIP30D , TIP30E , TIP30F .

Keywords

 TIP30 Datasheet  TIP30 Datenblatt  TIP30 RoHS  TIP30 Distributor
 TIP30 Application Notes  TIP30 Component  TIP30 Circuit  TIP30 Schematic
 TIP30 Equivalent  TIP30 Cross Reference  TIP30 Data Sheet  TIP30 Fiche Technique

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com