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TIP31
  TIP31
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TIP31
  TIP31
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TIP31
  TIP31
 
 
List
100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
TIP31 All Transistors Datasheet. Power MOSFET, IGBT, IC, Triacs Database. Semiconductor Catalog
 

TIP31 Transistor Datasheet. Parameters and Characteristics.

Type Designator: TIP31

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 40

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 3

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of TIP31 transistor: TO220

TIP31 Equivalent Transistors - Cross-Reference Search

TIP31 PDF doc:

1.1. tip31are.pdf Size:196K _motorola

TIP31
TIP31
Order this document MOTOROLA by TIP31A/D SEMICONDUCTOR TECHNICAL DATA NPN TIP31A Complementary Silicon Plastic TIP31B* Power Transistors TIP31C* . . . designed for use in general purpose amplifier and switching applications. PNP CollectorEmitter Saturation Voltage VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc TIP32A CollectorEmitter Sustaining Voltage VCEO(sus) = 60 Vdc (Min) TIP31A, TIP32A TIP32B* VCEO(sus) = 80 Vdc (Min) TIP31B, TIP32B VCEO(sus) = 100 Vdc (Min) TIP31C, TIP32C High Current Gain Bandwidth Product TIP32C* IIIIIIIIIIIIIIIIIIIIIII fT = 3.0 MHz (Min) @ IC = 500 mAdc *Motorola Preferred Device Compact TO220 AB Package IIIIIIIIIIIIIIIIIIIIIII 3 AMPERE IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III III IIII IIII III POWER TRANSISTORS *MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III III IIIIIIIIIII III III IIII IIII III IIII IIII III COMPLEMENTARY TIP31A TIP318 TIP31C IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III III IIIIII

1.2. tip31,32.pdf Size:173K _st2

TIP31
TIP31
TIP31A/31C TIP32A/32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The TIP31A and TIP31C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are intented 3 for use in medium power linear and switching 2 1 applications. The complementary PNP types are TIP32A and TO-220 TIP32C respectively. Also TIP32B is a PNP type. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN TIP31A TIP31C PNP TIP32A TIP32B TIP32C V Collector-Base Voltage (I = 0) 60 80 100 V CBO E VCEO Collector-Emitter Voltage (IB = 0) 60 80 100 V VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 3 A ICM Collector Peak Current 5 A IB Base Current 1 A P Total Dissipation at Tcase ? 25 oC 40 W tot 2 W Tamb ? 25 oC o Tstg Storage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C For PNP types voltage and current values a

1.3. tip31a.pdf Size:135K _st2

TIP31
TIP31
TIP31A Power transistors General features New enhanced series High switching speed hFE improved linearity Applications 3 2 1 Linear and switching industrial application TO-220 Description The TIP31A is a base island technology NPN power transistor in TO-220 plastic package with better performances than the industry standard TIP31A that make this device suitable for audio, Internal schematic diagram power linear and switching applications. The PNP type is TIP32A. Order codes Part Number Marking Package Packing TIP31A TIP31A TO-220 Tube April 2006 Rev 1 1/10 www.st.com 10 Contents TIP31A Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curve) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Package mechanical data . .

1.4. tip31.pdf Size:39K _st2

TIP31
TIP31
TIP31A/31B/31C TIP32A/32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS n TIP31A, TIP31C, TIP32A,TIP32B, AND TIP32C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP31A, TIP31B and TIP31C are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications. 3 2 The complementary PNP types are TIP32A, 1 TIP32B and TIP32C. TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN TIP31A TIP31B TIP31C PNP TIP32A TIP32B TIP32C V Collector-Base Voltage (I = 0) 60 80 100 V CBO E V Collector-Emitter Voltage (I = 0) 60 80 100 V CEO B VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 3 A I Collector Peak Current 5 A CM I Base Current 1 A B P Total Dissipation at T ? 25 oC 40 W tot case Tamb ? 25 oC 2 W o Tstg Storage Temperature -65 to 150 C o T Max. Operating Junction Temperature 150 C j For PNP types voltage and current values

1.5. tip31c.pdf Size:136K _st2

TIP31
TIP31
TIP31C Power transistors General features New enhanced series High switching speed hFE improved linearity hFE Grouping 3 2 Applications 1 Linear and switching industrial application TO-220 Description The TIP31C is a base island technology NPN power transistor in TO-220 plastic package with Internal schematic diagram better performances than the industry standard TIP31C that make this device suitable for audio, power linear and switching applications. The PNP type is TIP32C. Order codes Part Number Marking Package Packing TIP31C R TIP31C TIP31C O TO-220 Tube Note: on page 4 TIP31C Y April 2006 Rev 1 1/10 www.st.com 10 Contents TIP31C Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curve) . . . . . . . . . . . . . . . . . . . . . .

1.6. tip31-32.pdf Size:75K _st2

TIP31
TIP31
TIP31A/31C TIP32A/32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 2 1 DESCRIPTION The TIP31A and TIP31C are silicon epitaxial-base NPN transistors in Jedec TO-220 TO-220 plastic package, intented for use in medium power linear and switching applications. TIP32B is PNP power transistor.The complementary PNP types for TIP31A and TIP31C are TIP32A and TIP32C. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN TIP31A TIP31C PNP* TIP32A TIP32B TIP32C V Collector-Base Voltage (I = 0) 60 80 100 V CBO E V Collector-Emitter Voltage (I = 0) 60 80 100 V CEO B VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 3 A I Collector Peak Current 5 A CM I Base Current 1 A B o Ptot Total Dissipation at Tcase ? 25 C 40 W o Tamb ? 25 C 2 W o Tstg Storage Temperature -65 to 150 C o T Max. Operating Junction Temperature 150 C j * For PNP

1.7. tip31.pdf Size:37K _fairchild_semi

TIP31
TIP31
TIP31 Series(TIP31/31A/31B/31C) Medium Power Linear Switching Applications Complementary to TIP32/32A/32B/32C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : TIP31 40 V : TIP31A 60 V : TIP31B 80 V : TIP31C 100 V VCEO Collector-Emitter Voltage : TIP31 40 V : TIP31A 60 V : TIP31B 80 V : TIP31C 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 3 A ICP Collector Current (Pulse) 5 A IB Base Current 1 A PC Collector Dissipation (TC=25C) 40 W PC Collector Dissipation (Ta=25C) 2 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage : TIP31 IC = 30mA, IB = 0 40 V : TIP31A 60 V : TIP31B 80 V : TIP31C 100 V ICEO Collector Cut-o

1.8. tip31abc.pdf Size:39K _fairchild_semi

TIP31
TIP31

1.9. tip31_tip31a_tip31b_tip31c.pdf Size:526K _fairchild_semi

TIP31
TIP31

1.10. tip31-a-b-c-to220.pdf Size:131K _mcc

TIP31
TIP31
MCC TM Micro Commercial Components TIP31/A/B/C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features TO-220 package Silicon NPN The complementary PNP types are the TIP32 respectively Case Material: Molded Plastic. ULFlammability Power Transistors Classification Rating 94V-0 Marking : Part Number Absolute Maximum Ratings @ Ta = 25? (unless otherwise noted) Symbol Parameter Value Unit TO-220AB VCBO TIP31 40 B L TIP31A Collector-base voltage V 60 M TIP31B (Open emitter) 80 TIP31C C 100 D VCE0 A 40 K TIP31 Collector-emitter voltage V 60 E TIP31A (Open base) 80 TIP31B 100 TIP31C VEBO Emitter-base Voltage F 5 V (Open collector) IC Collector Current 3 A G ICM Collector Current Pulse 5 A I J IB Base Current 1 A 1 2 3 N Total Device Dissipation(Ta=25?) 2 W PC H H PIN 1. BASE Total Device Dissipation(Tc=25?) 40 W PIN 2. COLLECTOR PIN 3. EMIT

1.11. tip31_tip31a_tip31b_tip31c_to-220.pdf Size:256K _mcc

TIP31
TIP31
MCC TM Micro Commercial Components TIP31/31A/31B/31C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Silicon NPN The complementary PNP types are the TIP32 respectively Epoxy meets UL 94 V-0 flammability rating Power Transistors Moisure Sensitivity Level 1 Marking : Part Number Absolute Maximum Ratings @ Ta = 25? (unless otherwise noted) Symbol Parameter Value Unit VCBO 40 TO-220AB TIP31 60 V TIP31A Collector-base voltage (Open emitter) B C 80 TIP31B 100 S TIP31C F VCEO 40 TIP31 60 V Q TIP31A Collector-emitter voltage (Open base) T 80 TIP31B 100 TIP31C A VEBO Emitter-base Voltage (Open collector) 5 V U IC Collector Current 3 A 1 2 3 ICM Collector Current Pulse 5 A IB Base Current 1 A H Total Device Dissipation(Ta=25?) W

1.12. tip31-a-b-c_tip32-a-b-c.pdf Size:126K _onsemi

TIP31
TIP31
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon http://onsemi.com Plastic Power Transistors Designed for use in general purpose amplifier and switching 3 AMPERE applications. POWER TRANSISTORS Features Collector-Emitter Saturation Voltage - COMPLEMENTARY SILICON VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc 40-60-80-100 VOLTS, Collector-Emitter Sustaining Voltage - 40 WATTS VCEO(sus) = 40 Vdc (Min) - TIP31, TIP32 = 60 Vdc (Min) - TIP31A, TIP32A = 80 Vdc (Min) - TIP31B, TIP32B MARKING = 100 Vdc (Min) - TIP31C, TIP32C DIAGRAM High Current Gain - Bandwidth Product 4 fT = 3.0 MHz (Min) @ IC = 500 mAdc Compact TO-220 AB Package Pb-Free Packages are Available* TO-220AB CASE 221A TIP3xxG MAXIMUM RATINGS STYLE 1 AYWW Rating Symbol Value Unit 1 PIN 1. BASE 2 IIIIIIIIIIII III IIII III 2. COLLECTOR 3 Collector - Emitter Voltage TIP31, TIP32 VCEO 40 Vdc 3. EMITTER IIIIIIIIIIII III 4. COLLECTOR IIII 60

1.13. tip31c.pdf Size:164K _utc

TIP31
TIP31
UNISONIC TECHNOLOGIES CO., LTD TIP31C NPN EXPITAXIAL TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP31C is a NPN epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. FEATURES * Complement to TIP32C. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 TIP31CL-TA3-T TIP31CG-TA3-T TO-220 B C E Tube TIP31CL-T60-K TIP31CG-T60-K TO-126 B C E Bulk TIP31CL-T6S-K TIP31CG-T6S-K TO-126S B C E Bulk TIP31CL-TN3-R TIP31CG-TN3-R TO-252 B C E Tape Reel www.unisonic.com.tw 1 of 3 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R203-010.E TIP31C NPN EXPITAXIAL TRANSISTOR ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V DC 3 A Collector Current IC Pulse 5 A Base Current IB 1 A TO-126S 10 W TO-126 Collector Dissipation (TC

1.14. tip31-a-b-c.pdf Size:85K _bourns

TIP31
TIP31
TIP31, TIP31A, TIP31B, TIP31C NPN SILICON POWER TRANSISTORS ? Designed for Complementary Use with the TIP32 Series TO-220 PACKAGE (TOP VIEW) ? 40 W at 25C Case Temperature ? 3 A Continuous Collector Current B 1 ? 5 A Peak Collector Current C 2 ? Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT TIP31 80 TIP31A 100 Collector-base voltage (IE = 0) VCBO V TIP31B 120 TIP31C 140 TIP31 40 TIP31A 60 Collector-emitter voltage (IB = 0) VCEO V TIP31B 80 TIP31C 100 Emitter-base voltage VEBO 5V Continuous collector current IC 3A Peak collector current (see Note 1) ICM 5A Continuous base current IB 1A Continuous device dissipation at (or below) 25C case temperature (see Note 2) Ptot 40 W Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Ptot 2W Unclamped inductive load energy

1.15. tip31.pdf Size:89K _secos

TIP31
TIP31
TIP31 / TIP31A / TIP31B / TIP31C NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-220J Medium Power Linear Switching Applications ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Ratings Parameter Symbol Unit TIP31 TIP31A TIP31B TIP31C Collector - Base Voltage V 40 60 80 100 V CBO Collector - Emitter Voltage V 40 60 80 100 V CEO Emitter - Base Voltage V 5 V EBO A Collector Current -Continuous I 3 C Cpllector Power Dissipation P 2 W C Maximum Junction to Ambient R 62.5 °C / W ?JA Junction, Storage Temperature T , T 150, -55~150 °C J STG http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 19-Sep-2011 Rev. A Page 1 of 2 TIP31 / TIP31A / TIP31B / TIP31C NPN Plastic-Encapsulate Transistor Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) P

1.16. tip31_tip32.pdf Size:316K _cdil

TIP31
TIP31
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP31, A, B, C NPN TIP32, A, B, C PNP TO-220 Plastic Package Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers ABSOLUTE MAXIMUM RATINGS (Ta=25?C) TIP31 TIP31A TIP31B TIP31C DESCRIPTION SYMBOL UNIT TIP32 TIP32A TIP32B TIP32C VCEO Collector Emitter Voltage 40 60 80 100 V Collector Base Voltage VCBO 40 60 80 100 V Emitter Base Voltage VEBO 5 V Collector Current Continuous IC 3 A ICM Collector Current Peak 5 A IB Base Current 1 A Power Dissipation upto Tc=25?C PD 40 W Derate above 25?C 320 mW/?C Power Dissipation upto Ta=25?C PD 2 W Derate above 25?C 16 mW/?C Unclamped Inductive Load Energy *E 32 mJ Operating And Storage Junction Tj , Tstg - 65 to +150 ?C Temperature THERMAL RESISTANCE Junction to Case Rth (j-c) 3.1

1.17. tip31c.pdf Size:68K _kec

TIP31
TIP31
SEMICONDUCTOR TIP31C TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A R FEATURES S Complementary to TIP32C. P D DIM MILLIMETERS A 10.30 MAX B 15.30 MAX C 0.80 MAXIMUM RATING (Ta=25 ) _ + D ?3.60 0.20 T E 3.00 CHARACTERISTIC SYMBOL RATING UNIT F 6.70 MAX _ G 13.60 + 0.50 L H 5.60 MAX VCBO Collector-Base Voltage 100 V C C J 1.37 MAX K 0.50 VCEO Collector-Emitter Voltage 100 V L 1.50 MAX M M M 2.54 VEBO Emitter-Base Voltage 5 V K N 4.70 MAX O 2.60 1 2 3 IC DC 3 P 1.50 MAX Collector Current A J Q 1.50 ICP Pulse 5 _ 1. BASE R 9.50 + 0.20 _ S 8.00 + 0.20 2. COLLECTOR (HEAT SINK) IB Base Current 1 A T 2.90 MAX 3. EMITTER 2 W Ta=25 Collector Power PC Dissipation 40 W Tc=25 TO-220AB Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCEO(SUS) IC=30mA, IB=0 Collector Emitter Sustain

1.18. tip31cf.pdf Size:436K _kec

TIP31
TIP31
SEMICONDUCTOR TIP31CF TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S _ Complementary to TIP32CF. A 10.0 + 0.3 _ + B 15.0 0.3 E C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E ?3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + MAXIMUM RATING (Ta=25 ) 0.5+0.1/-0.05 H _ + J 13.6 0.5 L L R K _ 3.7 0.2 CHARACTERISTIC SYMBOL RATING UNIT + L 1.2+0.25/-0.1 M 1.5+0.25/-0.1 M VCBO Collector-Base Voltage 100 V D D _ N 2.54 0.1 + _ P 6.8 0.1 + VCEO Collector-Emitter Voltage 100 V _ Q 4.5 0.2 + _ + R 2.6 0.2 VEBO Emitter-Base Voltage 5 V N N H S 0.5 Typ IC DC 3 Collector Current A ICP Pulse 5 1. BASE 1 2 3 IB Base Current 1 A 2. COLLECTOR 3. EMITTER 2 W Ta=25 Collector Power PC Dissipation 25 W Tc=25 TO-220IS Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCEO(SUS)

1.19. tip31e.pdf Size:231K _inchange_semiconductor

TIP31
TIP31
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP31E DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 140V(Min) ·Complement to Type TIP32E APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Pulse 5 A IBB Base Current 1 A Collector Power Dissipation PC TC=25? 40 W Tj Junction Temperature 150 ? Storage Ttemperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 3.125 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP31E ELECTRICAL CHARACT

1.20. tip31d.pdf Size:231K _inchange_semiconductor

TIP31
TIP31
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP31D DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 120V(Min) ·Complement to Type TIP32D APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Pulse 5 A IBB Base Current 1 A Collector Power Dissipation PC TC=25? 40 W Tj Junction Temperature 150 ? Storage Ttemperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 3.125 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP31D ELECTRICAL CHARACT

1.21. tip31_31a_31b_31c.pdf Size:149K _inchange_semiconductor

TIP31
TIP31
Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP31/31A/31B/31C DESCRIPTION Ў¤ With TO-220C package Ў¤ Complement to type TIP32/32A/32B/32C APPLICATIONS Ў¤ Medium power linear switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO Collector-base voltage PARAMETER CONDITIONS TIP31 TIP31A TIP31B VCEO IN Collector-emitter voltage ANG CH TIP31C TIP31 EMIC ES Open emitter Open base Open collector OND TOR UC 40 60 80 100 40 60 VALUE UNIT V TIP31A TIP31B TIP31C V 80 100 5 3 5 1 V A A A w VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current (DC) Collector current-Pulse Base current TC=25Ўж Collector power dissipation Ta=25Ўж Junction temperature Storage temperature 40 2 150 -65~150 Ўж Ўж

1.22. tip31f.pdf Size:231K _inchange_semiconductor

TIP31
TIP31
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP31F DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 160V(Min) ·Complement to Type TIP32F APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Pulse 5 A IBB Base Current 1 A Collector Power Dissipation PC TC=25? 40 W Tj Junction Temperature 150 ? Storage Ttemperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 3.125 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP31F ELECTRICAL CHARACT

1.23. tip31_abc.pdf Size:204K _lge

TIP31
TIP31
TIP31/31A/31B/31C TO-220 Transistor (NPN) TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Medium Power Linear Switching Applications Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter TIP31 TIP31A TIP31B TIP31C Units VCBO Collector-Base Voltage 40 60 80 100 V VCEO Collector-Emitter Voltage 40 60 80 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 2 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -55to+150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage TIP31 40 TIP31A 60 V(BR)CBO IC= 1mA, IE=0 V TIP31B 80 TIP31C 100 Collector-emitter breakdown voltage * TIP31 40 TIP31A 60 V(BR)CEO IC= 30mA, IB=0 V TIP31B 80 TIP31C 100 Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 5 V Collector cut-off curre

1.24. tip31ce3.pdf Size:149K _cystek

TIP31
TIP31
Spec. No. : C609E3 Issued Date : 2003.09.04 CYStech Electronics Corp. Revised Date : Page No. : 1/4 3A NPN Epitaxial Planar Power Transistor TIP31CE3 Description TIP31CE3 is designed for use in general purpose amplifier and switching applications. Features • Low collector-emitter saturation voltage, VCE(sat) = 1.2V(max) @ IC = 3A • High collector-emitter sustaining voltage, BVCEO(SUS) = 100V(min) • High current gain-bandwidth product , fT = 3MHz(min) @ IC = 500mA Symbol Outline TIP31CE3 TO-220AB B:Base C:Collector E:Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 3 A Collector Current (Pulse) ICP 5 (Note 1) Base Current IB 1 A Power Dissipation @ TA=25℃ PD 2 W Power Dissipation @ TC=25℃ PD 40 Thermal Resistance, Junction to Ambient RθJA 62.5 °C/W Thermal

1.25. tip31cj3.pdf Size:310K _cystek

TIP31
TIP31
Spec. No. : C609J3 Issued Date : 2014.06.06 CYStech Electronics Corp. Revised Date : Page No. : 1/6 3A NPN Epitaxial Planar Power Transistor TIP31CJ3 Description TIP31CJ3 is designed for use in general purpose amplifier and switching applications. Features • Low collector-emitter saturation voltage, VCE(sat) = 0.5V(max) @ IC = 3A • High collector-emitter sustaining voltage, BVCEO(SUS) = 100V(min) • High current gain-bandwidth product , fT = 3MHz(min) @ IC = 500mA • Pb-free lead plating and halogen-free package Symbol Outline TIP31CJ3 TO-252(DPAK) B:Base B C E C:Collector E:Emitter Ordering Information Device Package Shipping TO-252 TIP31CJ3-0-T3-G 2500 pcs / Tape & Reel (Pb-free lead plating and halogen-free package) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3:2500 pcs/tape & reel, 13” reel Product rank, zero for no rank products P

1.26. sttip31c.pdf Size:530K _semtech

TIP31
TIP31
ST TIP31C NPN Silicon Epitaxial Planar Transistor for power switching and amplifier applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 100 V Emitter Base Voltage VEBO 5 V Collector Current IC 3 A Collector Current (Pulse) ICP 5 A Base Current IB 1 A O Power Dissipation (Ta = 25 C) Ptot 2 W O Power Dissipation (Tc = 25 C) Ptot 40 W O Junction Temperature Tj 150 C O Storage Temperature Range Ts - 65 to + 150 C O Characteristics at Ta = 25 C Parameter Symbol Min. Max. Unit DC Current Gain at VCE = 4 V, IC = 1 A hFE 25 - - at VCE = 4 V, IC = 3 A hFE 10 50 - Collector Emitter Cutoff Current ICES - 0.2 mA at VCE = 100 V Collector Emitter Cutoff Current ICEO - 0.3 mA at VCE = 60 V Emitter Base Cutoff Current IEBO - 1 mA at VEB = 5 V Collector Emitter Sustaining Voltage VCEO(sus) 100 - V at IC = 30 mA Collector Emitter

See also transistors datasheet: TIP3054 , TIP3055 , TIP30A , TIP30B , TIP30C , TIP30D , TIP30E , TIP30F , 2N2219 , TIP31A , TIP31B , TIP31C , TIP31D , TIP31E , TIP31F , TIP32 , TIP32A .

Keywords

 TIP31 Datasheet  TIP31 Design TIP31 MOSFET TIP31 Power
 TIP31 RoHS Compliant TIP31 Service TIP31 Triacs TIP31 Semiconductor
 TIP31 Database TIP31 Innovation TIP31 IC TIP31 Electricity

 

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