All Transistors Datasheet

Order this document MOTOROLA by TIP31A/D SEMICONDUCTOR TECHNICAL DATA NPN TIP31A Complementary Silicon Plastic TIP31B* Power Transistors TIP31C* . . . designed for use in general purpose amplifier and switching applications. PNP � Collector�Emitter Saturation Voltage � VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc TIP32A � Collector�Emitter Sustaining Voltage � VCEO(sus) = 60 Vdc (Min) � TIP31A, TIP32A TIP32B* VCEO(sus) = 80 Vdc (Min) � TIP31B, TIP32B VCEO(sus) = 100 Vdc (Min) � TIP31C, TIP32C � High Current Gain � Bandwidth Product TIP32C* IIIIIIIIIIIIIIIIIIIIIII fT = 3.0 MHz (Min) @ IC = 500 mAdc *Motorola Preferred Device � Compact TO�220 AB Package IIIIIIIIIIIIIIIIIIIIIII 3 AMPERE IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III III IIII IIII III POWER TRANSISTORS *MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III III IIIIIIIIIII III III IIII IIII III IIII IIII III COMPLEMENTARY TIP31A TIP318 TIP31C IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III III IIIIII

1.2. tip31-32.pdf Size:75K _st2

TIP31A/31C TIP32A/32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 2 1 DESCRIPTION The TIP31A and TIP31C are silicon epitaxial-base NPN transistors in Jedec TO-220 TO-220 plastic package, intented for use in medium power linear and switching applications. TIP32B is PNP power transistor.The complementary PNP types for TIP31A and TIP31C are TIP32A and TIP32C. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN TIP31A TIP31C PNP* TIP32A TIP32B TIP32C V Collector-Base Voltage (I = 0) 60 80 100 V CBO E V Collector-Emitter Voltage (I = 0) 60 80 100 V CEO B VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 3 A I Collector Peak Current 5 A CM I Base Current 1 A B o Ptot Total Dissipation at Tcase ? 25 C 40 W o Tamb ? 25 C 2 W o Tstg Storage Temperature -65 to 150 C o T Max. Operating Junction Temperature 150 C j * For PNP

1.3. tip31,32.pdf Size:173K _st2

TIP31A/31C TIP32A/32B/32C � COMPLEMENTARY SILICON POWER TRANSISTORS APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The TIP31A and TIP31C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are intented 3 for use in medium power linear and switching 2 1 applications. The complementary PNP types are TIP32A and TO-220 TIP32C respectively. Also TIP32B is a PNP type. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN TIP31A TIP31C PNP TIP32A TIP32B TIP32C V Collector-Base Voltage (I = 0) 60 80 100 V CBO E VCEO Collector-Emitter Voltage (IB = 0) 60 80 100 V VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 3 A ICM Collector Peak Current 5 A IB Base Current 1 A P Total Dissipation at Tcase ? 25 oC 40 W tot 2 W Tamb ? 25 oC o Tstg Storage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C For PNP types voltage and current values a

1.4. tip31.pdf Size:39K _st2

TIP31A/31B/31C TIP32A/32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS n TIP31A, TIP31C, TIP32A,TIP32B, AND TIP32C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP31A, TIP31B and TIP31C are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications. 3 2 The complementary PNP types are TIP32A, 1 TIP32B and TIP32C. TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN TIP31A TIP31B TIP31C PNP TIP32A TIP32B TIP32C V Collector-Base Voltage (I = 0) 60 80 100 V CBO E V Collector-Emitter Voltage (I = 0) 60 80 100 V CEO B VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 3 A I Collector Peak Current 5 A CM I Base Current 1 A B P Total Dissipation at T ? 25 oC 40 W tot case Tamb ? 25 oC 2 W o Tstg Storage Temperature -65 to 150 C o T Max. Operating Junction Temperature 150 C j For PNP types voltage and current values

1.5. tip31a.pdf Size:135K _st2

TIP31A Power transistors General features � New enhanced series � High switching speed � hFE improved linearity Applications 3 2 1 � Linear and switching industrial application TO-220 Description The TIP31A is a base island technology NPN power transistor in TO-220 plastic package with better performances than the industry standard TIP31A that make this device suitable for audio, Internal schematic diagram power linear and switching applications. The PNP type is TIP32A. Order codes Part Number Marking Package Packing TIP31A TIP31A TO-220 Tube April 2006 Rev 1 1/10 www.st.com 10 Contents TIP31A Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curve) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Package mechanical data . .

1.6. tip31c.pdf Size:136K _st2

TIP31C Power transistors General features � New enhanced series � High switching speed � hFE improved linearity � hFE Grouping 3 2 Applications 1 � Linear and switching industrial application TO-220 Description The TIP31C is a base island technology NPN power transistor in TO-220 plastic package with Internal schematic diagram better performances than the industry standard TIP31C that make this device suitable for audio, power linear and switching applications. The PNP type is TIP32C. Order codes Part Number Marking Package Packing TIP31C R TIP31C TIP31C O TO-220 Tube Note: on page 4 TIP31C Y April 2006 Rev 1 1/10 www.st.com 10 Contents TIP31C Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curve) . . . . . . . . . . . . . . . . . . . . . .

1.7. tip31_tip31a_tip31b_tip31c.pdf Size:526K _fairchild_semi

1.8. tip31.pdf Size:37K _fairchild_semi

TIP31 Series(TIP31/31A/31B/31C) Medium Power Linear Switching Applications � Complementary to TIP32/32A/32B/32C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25�C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : TIP31 40 V : TIP31A 60 V : TIP31B 80 V : TIP31C 100 V VCEO Collector-Emitter Voltage : TIP31 40 V : TIP31A 60 V : TIP31B 80 V : TIP31C 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 3 A ICP Collector Current (Pulse) 5 A IB Base Current 1 A PC Collector Dissipation (TC=25�C) 40 W PC Collector Dissipation (Ta=25�C) 2 W TJ Junction Temperature 150 �C TSTG Storage Temperature - 65 ~ 150 �C Electrical Characteristics TC=25�C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage : TIP31 IC = 30mA, IB = 0 40 V : TIP31A 60 V : TIP31B 80 V : TIP31C 100 V ICEO Collector Cut-o

1.9. tip31abc.pdf Size:39K _fairchild_semi

1.10. tip31-a-b-c-to220.pdf Size:131K _mcc

MCC TM Micro Commercial Components TIP31/A/B/C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features � TO-220 package Silicon NPN � The complementary PNP types are the TIP32 respectively � Case Material: Molded Plastic. ULFlammability Power Transistors Classification Rating 94V-0 � Marking : Part Number Absolute Maximum Ratings @ Ta = 25? (unless otherwise noted) Symbol Parameter Value Unit TO-220AB VCBO TIP31 40 B L TIP31A Collector-base voltage V 60 M TIP31B (Open emitter) 80 TIP31C C 100 D VCE0 A 40 K TIP31 Collector-emitter voltage V 60 E TIP31A (Open base) 80 TIP31B 100 TIP31C VEBO Emitter-base Voltage F 5 V (Open collector) IC Collector Current 3 A G ICM Collector Current Pulse 5 A I J IB Base Current 1 A 1 2 3 N Total Device Dissipation(Ta=25?) 2 W PC H H PIN 1. BASE Total Device Dissipation(Tc=25?) 40 W PIN 2. COLLECTOR PIN 3. EMIT

1.11. tip31_tip31a_tip31b_tip31c_to-220.pdf Size:256K _mcc

MCC TM Micro Commercial Components TIP31/31A/31B/31C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features � Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Silicon NPN � The complementary PNP types are the TIP32 respectively � Epoxy meets UL 94 V-0 flammability rating Power Transistors � Moisure Sensitivity Level 1 � Marking : Part Number Absolute Maximum Ratings @ Ta = 25? (unless otherwise noted) Symbol Parameter Value Unit VCBO 40 TO-220AB TIP31 60 V TIP31A Collector-base voltage (Open emitter) B C 80 TIP31B 100 S TIP31C F VCEO 40 TIP31 60 V Q TIP31A Collector-emitter voltage (Open base) T 80 TIP31B 100 TIP31C A VEBO Emitter-base Voltage (Open collector) 5 V U IC Collector Current 3 A 1 2 3 ICM Collector Current Pulse 5 A IB Base Current 1 A H Total Device Dissipation(Ta=25?) W

1.12. tip31-a-b-c_tip32-a-b-c.pdf Size:126K _onsemi

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon http://onsemi.com Plastic Power Transistors Designed for use in general purpose amplifier and switching 3 AMPERE applications. POWER TRANSISTORS Features � Collector-Emitter Saturation Voltage - COMPLEMENTARY SILICON VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc 40-60-80-100 VOLTS, � Collector-Emitter Sustaining Voltage - 40 WATTS VCEO(sus) = 40 Vdc (Min) - TIP31, TIP32 = 60 Vdc (Min) - TIP31A, TIP32A = 80 Vdc (Min) - TIP31B, TIP32B MARKING = 100 Vdc (Min) - TIP31C, TIP32C DIAGRAM � High Current Gain - Bandwidth Product 4 fT = 3.0 MHz (Min) @ IC = 500 mAdc � Compact TO-220 AB Package � Pb-Free Packages are Available* TO-220AB CASE 221A TIP3xxG MAXIMUM RATINGS STYLE 1 AYWW Rating Symbol Value Unit 1 PIN 1. BASE 2 IIIIIIIIIIII III IIII III 2. COLLECTOR 3 Collector - Emitter Voltage TIP31, TIP32 VCEO 40 Vdc 3. EMITTER IIIIIIIIIIII III 4. COLLECTOR IIII 60

1.13. tip31c.pdf Size:89K _utc

UTC TIP31C NPN EXPITAXIAL PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP31C is a NPN expitaxial planar transistor, designed for using in general purpose amplifier and switching applications. 1 FEATURE *Complement to tip32C TO-220 1:BASE 2:COLLECTOR 3:EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Collector Base Voltage VCBO 100 V Collector to Emitter Voltage VCEO 100 V Emitter To Base Voltage VEBO 5 V Collector Current(DC) IC 3 A Collector Current(Pulse) IC 5 A Base Current IB 1 A Collector Dissipation(Tc=25�C) Pc 40 W Collector Dissipation(Ta=25�C) Pc 2 W Junction Temperature Tj 150 �C Storage Temperature Tstg -65 ~ +150 �C ELECTRICAL CHARACTERISTICS(Tc=25�C) PARAMATER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Emitter Sustaining Voltage(*) BVCEO IC=30mA,IB=0 100 V Collect Cutoff Current ICES VCB=100V,VEB=0 200 �A Collector Cutoff Current ICEO VCE=60V,IB=0 0.3 mA Emitter Cutoff Current IEBO VBE=5V,Ic=0 1 m

1.14. tip31-a-b-c.pdf Size:85K _bourns

TIP31, TIP31A, TIP31B, TIP31C NPN SILICON POWER TRANSISTORS ? Designed for Complementary Use with the TIP32 Series TO-220 PACKAGE (TOP VIEW) ? 40 W at 25�C Case Temperature ? 3 A Continuous Collector Current B 1 ? 5 A Peak Collector Current C 2 ? Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25�C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT TIP31 80 TIP31A 100 Collector-base voltage (IE = 0) VCBO V TIP31B 120 TIP31C 140 TIP31 40 TIP31A 60 Collector-emitter voltage (IB = 0) VCEO V TIP31B 80 TIP31C 100 Emitter-base voltage VEBO 5V Continuous collector current IC 3A Peak collector current (see Note 1) ICM 5A Continuous base current IB 1A Continuous device dissipation at (or below) 25�C case temperature (see Note 2) Ptot 40 W Continuous device dissipation at (or below) 25�C free air temperature (see Note 3) Ptot 2W Unclamped inductive load energy

1.15. tip31.pdf Size:89K _secos

TIP31 / TIP31A / TIP31B / TIP31C NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-220J Medium Power Linear Switching Applications ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Ratings Parameter Symbol Unit TIP31 TIP31A TIP31B TIP31C Collector - Base Voltage V 40 60 80 100 V CBO Collector - Emitter Voltage V 40 60 80 100 V CEO Emitter - Base Voltage V 5 V EBO A Collector Current -Continuous I 3 C Cpllector Power Dissipation P 2 W C Maximum Junction to Ambient R 62.5 °C / W ?JA Junction, Storage Temperature T , T 150, -55~150 °C J STG http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 19-Sep-2011 Rev. A Page 1 of 2 TIP31 / TIP31A / TIP31B / TIP31C NPN Plastic-Encapsulate Transistor Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) P

1.16. tip31cf.pdf Size:436K _kec

SEMICONDUCTOR TIP31CF TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S _ Complementary to TIP32CF. A 10.0 + 0.3 _ + B 15.0 0.3 E C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E ?3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + MAXIMUM RATING (Ta=25 ) 0.5+0.1/-0.05 H _ + J 13.6 0.5 L L R K _ 3.7 0.2 CHARACTERISTIC SYMBOL RATING UNIT + L 1.2+0.25/-0.1 M 1.5+0.25/-0.1 M VCBO Collector-Base Voltage 100 V D D _ N 2.54 0.1 + _ P 6.8 0.1 + VCEO Collector-Emitter Voltage 100 V _ Q 4.5 0.2 + _ + R 2.6 0.2 VEBO Emitter-Base Voltage 5 V N N H S 0.5 Typ IC DC 3 Collector Current A ICP Pulse 5 1. BASE 1 2 3 IB Base Current 1 A 2. COLLECTOR 3. EMITTER 2 W Ta=25 Collector Power PC Dissipation 25 W Tc=25 TO-220IS Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCEO(SUS)

1.17. tip31c.pdf Size:68K _kec

SEMICONDUCTOR TIP31C TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A R FEATURES S Complementary to TIP32C. P D DIM MILLIMETERS A 10.30 MAX B 15.30 MAX C 0.80 MAXIMUM RATING (Ta=25 ) _ + D ?3.60 0.20 T E 3.00 CHARACTERISTIC SYMBOL RATING UNIT F 6.70 MAX _ G 13.60 + 0.50 L H 5.60 MAX VCBO Collector-Base Voltage 100 V C C J 1.37 MAX K 0.50 VCEO Collector-Emitter Voltage 100 V L 1.50 MAX M M M 2.54 VEBO Emitter-Base Voltage 5 V K N 4.70 MAX O 2.60 1 2 3 IC DC 3 P 1.50 MAX Collector Current A J Q 1.50 ICP Pulse 5 _ 1. BASE R 9.50 + 0.20 _ S 8.00 + 0.20 2. COLLECTOR (HEAT SINK) IB Base Current 1 A T 2.90 MAX 3. EMITTER 2 W Ta=25 Collector Power PC Dissipation 40 W Tc=25 TO-220AB Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCEO(SUS) IC=30mA, IB=0 Collector Emitter Sustain

1.18. tip31d.pdf Size:231K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP31D DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 120V(Min) ·Complement to Type TIP32D APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Pulse 5 A IBB Base Current 1 A Collector Power Dissipation PC TC=25? 40 W Tj Junction Temperature 150 ? Storage Ttemperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 3.125 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP31D ELECTRICAL CHARACT

1.19. tip31f.pdf Size:231K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP31F DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 160V(Min) ·Complement to Type TIP32F APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Pulse 5 A IBB Base Current 1 A Collector Power Dissipation PC TC=25? 40 W Tj Junction Temperature 150 ? Storage Ttemperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 3.125 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP31F ELECTRICAL CHARACT

1.20. tip31e.pdf Size:231K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP31E DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 140V(Min) ·Complement to Type TIP32E APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Pulse 5 A IBB Base Current 1 A Collector Power Dissipation PC TC=25? 40 W Tj Junction Temperature 150 ? Storage Ttemperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 3.125 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP31E ELECTRICAL CHARACT

1.21. tip31_31a_31b_31c.pdf Size:149K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP31/31A/31B/31C DESCRIPTION Ў¤ With TO-220C package Ў¤ Complement to type TIP32/32A/32B/32C APPLICATIONS Ў¤ Medium power linear switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO Collector-base voltage PARAMETER CONDITIONS TIP31 TIP31A TIP31B VCEO IN Collector-emitter voltage ANG CH TIP31C TIP31 EMIC ES Open emitter Open base Open collector OND TOR UC 40 60 80 100 40 60 VALUE UNIT V TIP31A TIP31B TIP31C V 80 100 5 3 5 1 V A A A w VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current (DC) Collector current-Pulse Base current TC=25Ўж Collector power dissipation Ta=25Ўж Junction temperature Storage temperature 40 2 150 -65~150 Ўж Ўж

1.22. tip31_abc.pdf Size:204K _lge

TIP31/31A/31B/31C TO-220 Transistor (NPN) TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Medium Power Linear Switching Applications Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter TIP31 TIP31A TIP31B TIP31C Units VCBO Collector-Base Voltage 40 60 80 100 V VCEO Collector-Emitter Voltage 40 60 80 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 2 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -55to+150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage TIP31 40 TIP31A 60 V(BR)CBO IC= 1mA, IE=0 V TIP31B 80 TIP31C 100 Collector-emitter breakdown voltage * TIP31 40 TIP31A 60 V(BR)CEO IC= 30mA, IB=0 V TIP31B 80 TIP31C 100 Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 5 V Collector cut-off curre

See also transistors datasheet: TIP3054 , TIP3055 , TIP30A , TIP30B , TIP30C , TIP30D , TIP30E , TIP30F , SS8050 , TIP31A , TIP31B , TIP31C , TIP31D , TIP31E , TIP31F , TIP32 , TIP32A .

Keywords

TIP31 Datasheet	TIP31 Datenblatt	TIP31 RoHS	TIP31 Distributor
TIP31 Application Notes	TIP31 Component	TIP31 Circuit	TIP31 Schematic
TIP31 Equivalent	TIP31 Cross Reference	TIP31 Data Sheet	TIP31 Fiche Technique


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