All Transistors Datasheet



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TIP32
  TIP32
  TIP32
 
TIP32
  TIP32
  TIP32
 
TIP32
  TIP32
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU508AW
BU508AX .. BUL57PI
BUL58A .. BUV28F
BUV28FI .. BUX76
BUX77 .. C744
C760 .. CEN-A44
CEN-A45 .. CJD175
CJD176 .. CMPT5179
CMPT5401 .. CS9013E
CS9013F .. CSB858B
CSB858C .. CSD1468R
CSD1468S .. CZT4033
CZT5338 .. D38W13
D38W14 .. D44VH7
D44VH8 .. DH3467CD
DH3467CN .. DTA115TEA
DTA115TKA .. DTC143T
DTC143TCA .. DXTA92
DXTN07100BP5 .. ECG342
ECG343 .. ES3124
ES3125 .. FA1F4Z
FA1L3M .. FJV3103R
FJV3104R .. FMMT489
FMMT4890 .. FT3641
FT3642 .. GBD266
GBD267 .. GES4249
GES4250 .. GFT44/15E
GFT44/30 .. GT2906
GT305A .. HA7530
HA7531 .. HN1A02F
HN1A07F .. HUN5213
HUN5214 .. JC556A
JC556B .. KF507
KF508 .. KRA726T
KRA726U .. KRC659E
KRC659F .. KSA614-O
KSA614-R .. KSC2518
KSC2518-O .. KSD1691-O
KSD1691-Q .. KSR2006
KSR2007 .. KT315A
KT315A-1 .. KT6103A
KT6104A .. KT8123A
KT8124A .. KT847B
KT848A .. KTA1659A
KTA1660 .. KTC802E
KTC8050 .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE3520
MJE3521 .. MM4010
MM4018 .. MMBT4401T
MMBT4401W .. MMUN2132
MMUN2132L .. MP37A
MP37B .. MPQ5140
MPQ5141 .. MPS751
MPS753 .. MRF342
MRF3866R2 .. MUN5334DW1
MUN5335DW .. NB011EJ
NB011EK .. NB122H
NB122HH .. NB322F
NB322H .. NPS3702
NPS3703 .. NSS30070MR6T1G
NSS30071MR6T1G .. OC450K
OC45N .. PBSS304NZ
PBSS304PD .. PEMB14
PEMB15 .. PN4124
PN4125 .. PZT6718
PZT751 .. RN1119MFV
RN1130MFV .. RN2316
RN2317 .. RS7641
RT141 .. SD338
SD339 .. SGS112
SGS115 .. SRA2201
SRA2201E .. STA124SF
STA3073F .. SUR561J
SUR566EF .. TA1628
TA1650A .. TI619
TI620 .. TIP75
TIP75A .. TN3253
TN3390 .. TP4140
TP4141 .. UMD16N
UMD1N .. UN6123
UN6124 .. ZT1480
ZT1481 .. ZTX331K
ZTX331M .. ZXTN25020DZ
ZXTN25040DFH .. ZXTPS720MC
 
TIP32 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

TIP32 Transistor Datasheet. Parameters and Characteristics.

Type Designator: TIP32

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 40

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 3

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of TIP32 transistor: TO220

TIP32 Equivalent Transistors - Cross-Reference Search

TIP32 PDF doc:

1.1. tip32a.pdf Size:168K _st2

TIP32
TIP32
TIP32A Power transistor . Applications Linear and swithing industrial equipment Description The TIP32A is a silicon Epitaxial-base PNP power 3 2 transistor in Jedec TO-220 plastic package. It is 1 intented for use in medium power linear and switching applications. TO-220 The complementary NPN type is TIP31A. Internal schematic diagram Order codes Part number Marking Package Packing TIP32A TIP32A TO-220 Tube November 2006 Rev 2 1/8 www.st.com 8 Absolute maximum ratings TIP32A 1 Absolute maximum ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) -60 V VCEO Collector-emitter voltage (IB = 0) -60 V VEBO Emitte-base voltage (IC = 0) -5 V IC Collector current -3 A ICM Collector peak current (tP < 5ms) -5 A IB Base current -1 A Total dissipation at Tcase = 25C 40 W PTOT Tamb = 25C 2 W Tstg Storage temperature -65 to 150 C TJ Max. operating junction temperature 150 C 2/8 TIP32A Electrical c

1.2. tip32c.pdf Size:168K _st2

TIP32
TIP32
TIP32C Power transistor . Applications Linear and swithing industrial equipment Description The TIP32C is a silicon Epitaxial-base PNP power 3 2 transistor in Jedec TO-220 plastic package. It is 1 intented for use in medium power linear and switching applications. TO-220 The complementary NPN type is TIP31C. Internal schematic diagram Order codes Part number Marking Package Packing TIP32C TIP32C TO-220 Tube November 2006 Rev 2 1/8 www.st.com 8 Absolute maximum ratings TIP32C 1 Absolute maximum ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) -100 V VCEO Collector-emitter voltage (IB = 0) -100 V VEBO Emitte-base voltage (IC = 0) -5 V IC Collector current -3 A ICM Collector peak current (tP < 5ms) -5 A IB Base current -1 A Total dissipation at Tcase = 25C 40 W PTOT Tamb = 25C 2 W Tstg Storage temperature -65 to 150 C TJ Max. operating junction temperature 150 C 2/8 TIP32C Electrical

1.3. tip32abc.pdf Size:39K _fairchild_semi

TIP32
TIP32

1.4. tip32.pdf Size:37K _fairchild_semi

TIP32
TIP32
TIP32 Series(TIP32/32A/32B/32C) Medium Power Linear Switching Applications Complement to TIP31/31A/31B/31C TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : TIP32 - 40 V : TIP32A - 60 V : TIP32B - 80 V : TIP32C - 100 V VCEO Collector-Emitter Voltage : TIP32 - 40 V : TIP32A - 60 V : TIP32B - 80 V : TIP32C -100 V VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 3 A ICP Collector Current (Pulse) - 5 A IB Base Current - 3 A PC Collector Dissipation (TC=25C) 40 W PC Collector Dissipation (Ta=25C) 2 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage : TIP32 IC = - 30mA, IB = 0 -40 V : TIP32A -60 V : TIP32B -80 V : TIP32C -1

1.5. tip32_tip32a_tip32b_tip32c.pdf Size:527K _fairchild_semi

TIP32
TIP32

1.6. tip32.pdf Size:50K _samsung

TIP32
TIP32
TIP32 SERIES (TIP32/32A/32B/32C) PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR TO-220 SWITCHING APPLICATIONS Complement to TIP31/31A/31B/31C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage : TIP32 VCBO -40 V : TIP32A -60 V : TIP32B -80 V : TIP32C -100 V Collector Emitter Voltage : TIP32 VCEO -40 V : TIP32A -60 V : TIP32B -80 V 1.Base 2.Collector 3.Emitter : TIP32C -100 V Emitter-Base Voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Current (Pulse) IC -5 A Base Current IB -3 A Collector Dissipation ( TC=25 ) PC 40 W Collector Dissipation ( TA=25 ) PC 2 W Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 ELECTRICAL CHARACTERISTICS (TC=25 ) Characteristic Symbol Test Conditions Min Max Unit *Collector Emitter Sustaining Voltage : TIP32 BVCEO(sus) IC = - 30mA, IB = 0 -40 V : TIP32A -60 V : TIP32B -80 V : TIP32C -100 V Collector Cutoff Current : TIP32/32A ICEO VCE = - 30

1.7. tip32_a_b_c_to220.pdf Size:76K _mcc

TIP32
TIP32
MCC TM Micro Commercial Components TIP32/A/B/C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features TO-220 package Silicon PNP The complementary NPN types are the TIP31 respectively Case Material: Molded Plastic. ULFlammability Power Transistors Classification Rating 94V-0 Marking : Part Number Absolute Maximum Ratings @ Ta = 2 (unless otherwise noted) Symbol Parameter Value Unit VCBO TO-220 TIP32 -40 TIP32A Collector-base voltage V -60 B L TIP32B (Open emitter) -80 M TIP32C -100 C D VCE0 -40 TIP32 A Collector-emitter voltage V -60 K TIP32A (Open base) -80 E TIP32B -100 TIP32C VEBO Emitter-base Voltage -5 V (Open collector) F IC Collector Current -3 A G ICM Collector Current Pulse -5 A I IB Base Current -1 A J 1 2 3 2 W PC Total Device Dissipation(Ta=2 N Total Device Dissipation(Tc=2 40 W H H PIN 1. BASE TJ Junction Temperature 150

1.8. tip32_tip32a_tip32b_tip32c.pdf Size:209K _mcc

TIP32
TIP32
MCC TM Micro Commercial Components TIP32/32A/32B/32C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Silicon PNP The complementary NPN types are the TIP31 respectively Epoxy meets UL 94 V-0 flammability rating Power Transistors Moisure Sensitivity Level 1 Marking : Part Number Absolute Maximum Ratings @ Ta = 25? (unless otherwise noted) Symbol Parameter Value Unit VCBO TO-220 -40 TIP32 B C Collector-base voltage -60 V TIP32A (Open emitter) -80 S TIP32B F -100 TIP32C VCEO -40 Q TIP32 Collector-emitter voltage -60 V T TIP32A (Open base) -80 TIP32B A -100 TIP32C U VEBO Emitter-base Voltage (Open collector) -5 V 1 2 3 IC Collector Current -3 A ICM Collector Current Pulse A -5 H IB Base Current A -1 Total Device Dissi

1.9. tip31-a-b-c_tip32-a-b-c.pdf Size:126K _onsemi

TIP32
TIP32
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon http://onsemi.com Plastic Power Transistors Designed for use in general purpose amplifier and switching 3 AMPERE applications. POWER TRANSISTORS Features Collector-Emitter Saturation Voltage - COMPLEMENTARY SILICON VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc 40-60-80-100 VOLTS, Collector-Emitter Sustaining Voltage - 40 WATTS VCEO(sus) = 40 Vdc (Min) - TIP31, TIP32 = 60 Vdc (Min) - TIP31A, TIP32A = 80 Vdc (Min) - TIP31B, TIP32B MARKING = 100 Vdc (Min) - TIP31C, TIP32C DIAGRAM High Current Gain - Bandwidth Product 4 fT = 3.0 MHz (Min) @ IC = 500 mAdc Compact TO-220 AB Package Pb-Free Packages are Available* TO-220AB CASE 221A TIP3xxG MAXIMUM RATINGS STYLE 1 AYWW Rating Symbol Value Unit 1 PIN 1. BASE 2 IIIIIIIIIIII III IIII III 2. COLLECTOR 3 Collector - Emitter Voltage TIP31, TIP32 VCEO 40 Vdc 3. EMITTER IIIIIIIIIIII III 4. COLLECTOR IIII 60

1.10. tip32c.pdf Size:138K _utc

TIP32
TIP32
UNISONIC TECHNOLOGIES CO.,LTD TIP32C PNP SILICON TRANSISTOR PNP EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP32C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. FEATURES * Complement to TIP31C ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 TIP32CL-TA3-T TIP32CG-TA3-T TO-220 B C E Tube TIP32CL-T60-K TIP32CG-T60-K TO-126 B C E Bulk TIP32CL-T6S-K TIP32CG-T6S-K TO-126S B C E Bulk TIP32CL-TN3-R TIP32CG-TN3-R TO-252 B C E Tape Reel www.unisonic.com.tw 1 of 3 Copyright © 2013 Unisonic Technologies Co.,LTD QW-R209-017,D TIP32C PNP SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (TA=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -100 V Emitter-Base Voltage VEBO -5 V DC IC -3 A Collector Current PULSE ICM -5 A Base Current IB -1 A TO-220 2 W Power Dissipation TO-126S/TO-126 PD 1.25 W TO-252 1 W Junction

1.11. tip32.pdf Size:343K _secos

TIP32
TIP32
TIP32 / TIP32C PNP Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-220J ? Medium Power Linear Switching Applications Collector ?? ??? Base ?? Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Ratings Parameter Symbol Unit TIP32 TIP32C Collector - Base Voltage VCBO -40 -100 V Collector - Emitter Voltage VCEO -40 -100 V Emitter - Base Voltage VEBO -5 V A Collector Current -Continuous IC -3 Collector Power Dissipation PC 2 W Maximum Junction to Ambient R?JA 62.5 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 11-Jan-2012 Rev. B Page 1 of 3 TIP32 / TIP32C PNP Plastic-Encapsulate Transistor Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test

1.12. tip31_tip32.pdf Size:316K _cdil

TIP32
TIP32
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP31, A, B, C NPN TIP32, A, B, C PNP TO-220 Plastic Package Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers ABSOLUTE MAXIMUM RATINGS (Ta=25?C) TIP31 TIP31A TIP31B TIP31C DESCRIPTION SYMBOL UNIT TIP32 TIP32A TIP32B TIP32C VCEO Collector Emitter Voltage 40 60 80 100 V Collector Base Voltage VCBO 40 60 80 100 V Emitter Base Voltage VEBO 5 V Collector Current Continuous IC 3 A ICM Collector Current Peak 5 A IB Base Current 1 A Power Dissipation upto Tc=25?C PD 40 W Derate above 25?C 320 mW/?C Power Dissipation upto Ta=25?C PD 2 W Derate above 25?C 16 mW/?C Unclamped Inductive Load Energy *E 32 mJ Operating And Storage Junction Tj , Tstg - 65 to +150 ?C Temperature THERMAL RESISTANCE Junction to Case Rth (j-c) 3.1

1.13. tip32cf.pdf Size:436K _kec

TIP32
TIP32
SEMICONDUCTOR TIP32CF TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S _ Complementary to TIP31CF. A 10.0 + 0.3 _ + B 15.0 0.3 E C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E ?3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + MAXIMUM RATING (Ta=25 ) 0.5+0.1/-0.05 H _ + J 13.6 0.5 L L R K _ 3.7 0.2 CHARACTERISTIC SYMBOL RATING UNIT + L 1.2+0.25/-0.1 M 1.5+0.25/-0.1 M VCBO -100 V Collector-Base Voltage D D _ N 2.54 0.1 + _ P 6.8 0.1 + VCEO -100 V Collector-Emitter Voltage _ Q 4.5 0.2 + _ + R 2.6 0.2 VEBO Emitter-Base Voltage -5 V N N H S 0.5 Typ IC DC -3 Collector Current A ICP Pulse -5 1. BASE 1 2 3 IB Base Current -1 A 2. COLLECTOR 3. EMITTER 2 W Ta=25 Collector Power PC Dissipation 25 W Tc=25 TO-220IS Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCE

1.14. tip32c.pdf Size:68K _kec

TIP32
TIP32
SEMICONDUCTOR TIP32C TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A R FEATURES S Complementary to TIP31C. P D DIM MILLIMETERS A 10.30 MAX B 15.30 MAX C 0.80 MAXIMUM RATING (Ta=25 ) _ + D ?3.60 0.20 T E 3.00 CHARACTERISTIC SYMBOL RATING UNIT F 6.70 MAX _ G 13.60 + 0.50 L H 5.60 MAX VCBO -100 V Collector-Base Voltage C C J 1.37 MAX K 0.50 VCEO -100 V Collector-Emitter Voltage L 1.50 MAX M M M 2.54 VEBO Emitter-Base Voltage -5 V K N 4.70 MAX O 2.60 1 2 3 IC DC -3 P 1.50 MAX Collector Current A J Q 1.50 ICP Pulse -5 _ 1. BASE R 9.50 + 0.20 _ S 8.00 + 0.20 2. COLLECTOR (HEAT SINK) IB Base Current -1 A T 2.90 MAX 3. EMITTER 2 W Ta=25 Collector Power PC Dissipation 40 W Tc=25 TO-220AB Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCEO(SUS) IC=-30mA, IB=0 Collector Emitter

1.15. tip32f.pdf Size:232K _inchange_semiconductor

TIP32
TIP32
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP32F DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= -160V(Min) ·Complement to Type TIP31F APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Pulse -5 A IBB Base Current -1 A Collector Power Dissipation PC TC=25? 40 W Tj Junction Temperature 150 ? Storage Ttemperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 3.125 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP32F ELECTRICAL

1.16. tip32d.pdf Size:232K _inchange_semiconductor

TIP32
TIP32
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP32D DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= -120V(Min) ·Complement to Type TIP31D APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Pulse -5 A IBB Base Current -1 A Collector Power Dissipation PC TC=25? 40 W Tj Junction Temperature 150 ? Storage Ttemperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 3.125 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP32D ELECTRICAL

1.17. tip32_32a_32b_32c.pdf Size:149K _inchange_semiconductor

TIP32
TIP32
Inchange Semiconductor Product Specification Silicon PNP Power Transistors TIP32/32A/32B/32C DESCRIPTION Ў¤ With TO-220C package Ў¤ Complement to type TIP31/31A/31B/31C APPLICATIONS Ў¤ Medium power linear and switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO IN PARAMETER CONDITIONS TIP32 TIP32A Collector-base voltage VCEO Collector-emitter voltage HAN C SEM GE TIP32B TIP32C TIP32 TIP32A Open base TIP32B TIP32C Open emitter OND IC TOR UC VALUE -40 -60 -80 -100 -40 -60 UNIT V V -80 -100 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current (DC) Collector current-Pulse Base current Open collector -5 -3 -5 -1 V A A A W TC=25Ўж Collector power dissipation Ta=25Ўж Junction temperature Storage temperature 40 2 150 -65~150 Ўж Ўж

1.18. tip32e.pdf Size:232K _inchange_semiconductor

TIP32
TIP32
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP32E DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= -140V(Min) ·Complement to Type TIP31E APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Pulse -5 A IBB Base Current -1 A Collector Power Dissipation PC TC=25? 40 W Tj Junction Temperature 150 ? Storage Ttemperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 3.125 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP32E ELECTRICAL

1.19. tip32_abc.pdf Size:244K _lge

TIP32
TIP32
TIP32/32A/32B/32C TO-220 Transistor (PNP) TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Medium Power Linear Switching Applications Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter TIP32 TIP32A TIP32B TIP32C Units VCBO Collector-Base Voltage -40 -60 -80 -100 V VCEO Collector-Emitter Voltage -40 -60 -80 -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation 2 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -55to+150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage TIP32 -40 TIP32A -60 V(BR)CBO IC= -1mA, IE=0 V TIP32B -80 TIP32C -100 Collector-emitter breakdown voltage * TIP32 -40 TIP32A -60 V(BR)CEO IC= -30mA, IB=0 V TIP32B -80 TIP32C -100 Emitter-base breakdown voltage V(BR)EBO IE= -1mA, IC=0 -5 V

See also transistors datasheet: TIP30F , TIP31 , TIP31A , TIP31B , TIP31C , TIP31D , TIP31E , TIP31F , SS8050 , TIP32A , TIP32B , TIP32C , TIP32D , TIP32E , TIP32F , TIP33 , TIP33A .

Keywords

 TIP32 Datasheet  TIP32 Datenblatt  TIP32 RoHS  TIP32 Distributor
 TIP32 Application Notes  TIP32 Component  TIP32 Circuit  TIP32 Schematic
 TIP32 Equivalent  TIP32 Cross Reference  TIP32 Data Sheet  TIP32 Fiche Technique

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