All Transistors Datasheet



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TIP32
  TIP32
  TIP32
 
TIP32
  TIP32
  TIP32
 
TIP32
  TIP32
 
 
List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
TIP32 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

TIP32 Transistor Datasheet. Parameters and Characteristics.

Type Designator: TIP32

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 40

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 3

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of TIP32 transistor: TO220

TIP32 Equivalent Transistors - Cross-Reference Search

TIP32 PDF doc:

1.1. tip32a.pdf Size:168K _st2

TIP32
TIP32
TIP32A Power transistor . Applications Linear and swithing industrial equipment Description The TIP32A is a silicon Epitaxial-base PNP power 3 2 transistor in Jedec TO-220 plastic package. It is 1 intented for use in medium power linear and switching applications. TO-220 The complementary NPN type is TIP31A. Internal schematic diagram Order codes Part number Marking Package Packing TIP32A TIP32A TO-220 Tube November 2006 Rev 2 1/8 www.st.com 8 Absolute maximum ratings TIP32A 1 Absolute maximum ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) -60 V VCEO Collector-emitter voltage (IB = 0) -60 V VEBO Emitte-base voltage (IC = 0) -5 V IC Collector current -3 A ICM Collector peak current (tP < 5ms) -5 A IB Base current -1 A Total dissipation at Tcase = 25C 40 W PTOT Tamb = 25C 2 W Tstg Storage temperature -65 to 150 C TJ Max. operating junction temperature 150 C 2/8 TIP32A Electrical c

1.2. tip32c.pdf Size:168K _st2

TIP32
TIP32
TIP32C Power transistor . Applications Linear and swithing industrial equipment Description The TIP32C is a silicon Epitaxial-base PNP power 3 2 transistor in Jedec TO-220 plastic package. It is 1 intented for use in medium power linear and switching applications. TO-220 The complementary NPN type is TIP31C. Internal schematic diagram Order codes Part number Marking Package Packing TIP32C TIP32C TO-220 Tube November 2006 Rev 2 1/8 www.st.com 8 Absolute maximum ratings TIP32C 1 Absolute maximum ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) -100 V VCEO Collector-emitter voltage (IB = 0) -100 V VEBO Emitte-base voltage (IC = 0) -5 V IC Collector current -3 A ICM Collector peak current (tP < 5ms) -5 A IB Base current -1 A Total dissipation at Tcase = 25C 40 W PTOT Tamb = 25C 2 W Tstg Storage temperature -65 to 150 C TJ Max. operating junction temperature 150 C 2/8 TIP32C Electrical

1.3. tip32abc.pdf Size:39K _fairchild_semi

TIP32
TIP32

1.4. tip32.pdf Size:37K _fairchild_semi

TIP32
TIP32
TIP32 Series(TIP32/32A/32B/32C) Medium Power Linear Switching Applications Complement to TIP31/31A/31B/31C TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : TIP32 - 40 V : TIP32A - 60 V : TIP32B - 80 V : TIP32C - 100 V VCEO Collector-Emitter Voltage : TIP32 - 40 V : TIP32A - 60 V : TIP32B - 80 V : TIP32C -100 V VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 3 A ICP Collector Current (Pulse) - 5 A IB Base Current - 3 A PC Collector Dissipation (TC=25C) 40 W PC Collector Dissipation (Ta=25C) 2 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage : TIP32 IC = - 30mA, IB = 0 -40 V : TIP32A -60 V : TIP32B -80 V : TIP32C -1

1.5. tip32_tip32a_tip32b_tip32c.pdf Size:527K _fairchild_semi

TIP32
TIP32

1.6. tip32.pdf Size:50K _samsung

TIP32
TIP32
TIP32 SERIES (TIP32/32A/32B/32C) PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR TO-220 SWITCHING APPLICATIONS Complement to TIP31/31A/31B/31C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage : TIP32 VCBO -40 V : TIP32A -60 V : TIP32B -80 V : TIP32C -100 V Collector Emitter Voltage : TIP32 VCEO -40 V : TIP32A -60 V : TIP32B -80 V 1.Base 2.Collector 3.Emitter : TIP32C -100 V Emitter-Base Voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Current (Pulse) IC -5 A Base Current IB -3 A Collector Dissipation ( TC=25 ) PC 40 W Collector Dissipation ( TA=25 ) PC 2 W Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 ELECTRICAL CHARACTERISTICS (TC=25 ) Characteristic Symbol Test Conditions Min Max Unit *Collector Emitter Sustaining Voltage : TIP32 BVCEO(sus) IC = - 30mA, IB = 0 -40 V : TIP32A -60 V : TIP32B -80 V : TIP32C -100 V Collector Cutoff Current : TIP32/32A ICEO VCE = - 30

1.7. tip32_a_b_c_to220.pdf Size:76K _mcc

TIP32
TIP32
MCC TM Micro Commercial Components TIP32/A/B/C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features TO-220 package Silicon PNP The complementary NPN types are the TIP31 respectively Case Material: Molded Plastic. ULFlammability Power Transistors Classification Rating 94V-0 Marking : Part Number Absolute Maximum Ratings @ Ta = 2 (unless otherwise noted) Symbol Parameter Value Unit VCBO TO-220 TIP32 -40 TIP32A Collector-base voltage V -60 B L TIP32B (Open emitter) -80 M TIP32C -100 C D VCE0 -40 TIP32 A Collector-emitter voltage V -60 K TIP32A (Open base) -80 E TIP32B -100 TIP32C VEBO Emitter-base Voltage -5 V (Open collector) F IC Collector Current -3 A G ICM Collector Current Pulse -5 A I IB Base Current -1 A J 1 2 3 2 W PC Total Device Dissipation(Ta=2 N Total Device Dissipation(Tc=2 40 W H H PIN 1. BASE TJ Junction Temperature 150

1.8. tip32_tip32a_tip32b_tip32c.pdf Size:209K _mcc

TIP32
TIP32
MCC TM Micro Commercial Components TIP32/32A/32B/32C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Silicon PNP The complementary NPN types are the TIP31 respectively Epoxy meets UL 94 V-0 flammability rating Power Transistors Moisure Sensitivity Level 1 Marking : Part Number Absolute Maximum Ratings @ Ta = 25? (unless otherwise noted) Symbol Parameter Value Unit VCBO TO-220 -40 TIP32 B C Collector-base voltage -60 V TIP32A (Open emitter) -80 S TIP32B F -100 TIP32C VCEO -40 Q TIP32 Collector-emitter voltage -60 V T TIP32A (Open base) -80 TIP32B A -100 TIP32C U VEBO Emitter-base Voltage (Open collector) -5 V 1 2 3 IC Collector Current -3 A ICM Collector Current Pulse A -5 H IB Base Current A -1 Total Device Dissi

1.9. tip31-a-b-c_tip32-a-b-c.pdf Size:126K _onsemi

TIP32
TIP32
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon http://onsemi.com Plastic Power Transistors Designed for use in general purpose amplifier and switching 3 AMPERE applications. POWER TRANSISTORS Features Collector-Emitter Saturation Voltage - COMPLEMENTARY SILICON VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc 40-60-80-100 VOLTS, Collector-Emitter Sustaining Voltage - 40 WATTS VCEO(sus) = 40 Vdc (Min) - TIP31, TIP32 = 60 Vdc (Min) - TIP31A, TIP32A = 80 Vdc (Min) - TIP31B, TIP32B MARKING = 100 Vdc (Min) - TIP31C, TIP32C DIAGRAM High Current Gain - Bandwidth Product 4 fT = 3.0 MHz (Min) @ IC = 500 mAdc Compact TO-220 AB Package Pb-Free Packages are Available* TO-220AB CASE 221A TIP3xxG MAXIMUM RATINGS STYLE 1 AYWW Rating Symbol Value Unit 1 PIN 1. BASE 2 IIIIIIIIIIII III IIII III 2. COLLECTOR 3 Collector - Emitter Voltage TIP31, TIP32 VCEO 40 Vdc 3. EMITTER IIIIIIIIIIII III 4. COLLECTOR IIII 60

1.10. tip32c.pdf Size:85K _utc

TIP32
TIP32
UTC TIP32C PNP EXPITAXIAL PLANAR TRANSISTOR PNP EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP32C is a PNP expitaxial planar transistor, designed for using in general purpose amplifier and switching applications. 1 FEATURE *Complement to tip31C TO-220 1:BASE 2:COLLECTOR 3:EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNITS Collector Base Voltage VCBO -100 V Collector to Emitter Voltage VCEO -100 V Emitter To Base Voltage VEBO -5 V Collector Current(DC) Ic -3 A Collector Current(Pulse) Ic -5 A Base Current IB -1 A Collector Dissipation(Tc=25C) Pc 40 W Collector Dissipation(Ta=25C) Pc 2 W Junction Temperature Tj 150 C Storage Temperature Tstg -65 ~ +150 C ELECTRICAL CHARACTERISTICS(Tc=25C) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector emitter Sustaining voltage(*) BVCEO IC=-30mA,IB=0 -100 V Collector Cutoff Current ICES VCE=-100V,VEB=0 -200 A Collector Cutoff Current ICEO VCE=-60V,IB=0 -0.3 mA Emitter Cutoff current IEBO

1.11. tip32.pdf Size:343K _secos

TIP32
TIP32
TIP32 / TIP32C PNP Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-220J ? Medium Power Linear Switching Applications Collector ?? ??? Base ?? Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Ratings Parameter Symbol Unit TIP32 TIP32C Collector - Base Voltage VCBO -40 -100 V Collector - Emitter Voltage VCEO -40 -100 V Emitter - Base Voltage VEBO -5 V A Collector Current -Continuous IC -3 Collector Power Dissipation PC 2 W Maximum Junction to Ambient R?JA 62.5 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 11-Jan-2012 Rev. B Page 1 of 3 TIP32 / TIP32C PNP Plastic-Encapsulate Transistor Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test

1.12. tip31_tip32.pdf Size:316K _cdil

TIP32
TIP32
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP31, A, B, C NPN TIP32, A, B, C PNP TO-220 Plastic Package Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers ABSOLUTE MAXIMUM RATINGS (Ta=25?C) TIP31 TIP31A TIP31B TIP31C DESCRIPTION SYMBOL UNIT TIP32 TIP32A TIP32B TIP32C VCEO Collector Emitter Voltage 40 60 80 100 V Collector Base Voltage VCBO 40 60 80 100 V Emitter Base Voltage VEBO 5 V Collector Current Continuous IC 3 A ICM Collector Current Peak 5 A IB Base Current 1 A Power Dissipation upto Tc=25?C PD 40 W Derate above 25?C 320 mW/?C Power Dissipation upto Ta=25?C PD 2 W Derate above 25?C 16 mW/?C Unclamped Inductive Load Energy *E 32 mJ Operating And Storage Junction Tj , Tstg - 65 to +150 ?C Temperature THERMAL RESISTANCE Junction to Case Rth (j-c) 3.1

1.13. tip32cf.pdf Size:436K _kec

TIP32
TIP32
SEMICONDUCTOR TIP32CF TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S _ Complementary to TIP31CF. A 10.0 + 0.3 _ + B 15.0 0.3 E C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E ?3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + MAXIMUM RATING (Ta=25 ) 0.5+0.1/-0.05 H _ + J 13.6 0.5 L L R K _ 3.7 0.2 CHARACTERISTIC SYMBOL RATING UNIT + L 1.2+0.25/-0.1 M 1.5+0.25/-0.1 M VCBO -100 V Collector-Base Voltage D D _ N 2.54 0.1 + _ P 6.8 0.1 + VCEO -100 V Collector-Emitter Voltage _ Q 4.5 0.2 + _ + R 2.6 0.2 VEBO Emitter-Base Voltage -5 V N N H S 0.5 Typ IC DC -3 Collector Current A ICP Pulse -5 1. BASE 1 2 3 IB Base Current -1 A 2. COLLECTOR 3. EMITTER 2 W Ta=25 Collector Power PC Dissipation 25 W Tc=25 TO-220IS Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCE

1.14. tip32c.pdf Size:68K _kec

TIP32
TIP32
SEMICONDUCTOR TIP32C TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A R FEATURES S Complementary to TIP31C. P D DIM MILLIMETERS A 10.30 MAX B 15.30 MAX C 0.80 MAXIMUM RATING (Ta=25 ) _ + D ?3.60 0.20 T E 3.00 CHARACTERISTIC SYMBOL RATING UNIT F 6.70 MAX _ G 13.60 + 0.50 L H 5.60 MAX VCBO -100 V Collector-Base Voltage C C J 1.37 MAX K 0.50 VCEO -100 V Collector-Emitter Voltage L 1.50 MAX M M M 2.54 VEBO Emitter-Base Voltage -5 V K N 4.70 MAX O 2.60 1 2 3 IC DC -3 P 1.50 MAX Collector Current A J Q 1.50 ICP Pulse -5 _ 1. BASE R 9.50 + 0.20 _ S 8.00 + 0.20 2. COLLECTOR (HEAT SINK) IB Base Current -1 A T 2.90 MAX 3. EMITTER 2 W Ta=25 Collector Power PC Dissipation 40 W Tc=25 TO-220AB Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCEO(SUS) IC=-30mA, IB=0 Collector Emitter

1.15. tip32f.pdf Size:232K _inchange_semiconductor

TIP32
TIP32
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP32F DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= -160V(Min) ·Complement to Type TIP31F APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Pulse -5 A IBB Base Current -1 A Collector Power Dissipation PC TC=25? 40 W Tj Junction Temperature 150 ? Storage Ttemperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 3.125 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP32F ELECTRICAL

1.16. tip32d.pdf Size:232K _inchange_semiconductor

TIP32
TIP32
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP32D DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= -120V(Min) ·Complement to Type TIP31D APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Pulse -5 A IBB Base Current -1 A Collector Power Dissipation PC TC=25? 40 W Tj Junction Temperature 150 ? Storage Ttemperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 3.125 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP32D ELECTRICAL

1.17. tip32_32a_32b_32c.pdf Size:149K _inchange_semiconductor

TIP32
TIP32
Inchange Semiconductor Product Specification Silicon PNP Power Transistors TIP32/32A/32B/32C DESCRIPTION Ў¤ With TO-220C package Ў¤ Complement to type TIP31/31A/31B/31C APPLICATIONS Ў¤ Medium power linear and switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO IN PARAMETER CONDITIONS TIP32 TIP32A Collector-base voltage VCEO Collector-emitter voltage HAN C SEM GE TIP32B TIP32C TIP32 TIP32A Open base TIP32B TIP32C Open emitter OND IC TOR UC VALUE -40 -60 -80 -100 -40 -60 UNIT V V -80 -100 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current (DC) Collector current-Pulse Base current Open collector -5 -3 -5 -1 V A A A W TC=25Ўж Collector power dissipation Ta=25Ўж Junction temperature Storage temperature 40 2 150 -65~150 Ўж Ўж

1.18. tip32e.pdf Size:232K _inchange_semiconductor

TIP32
TIP32
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP32E DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= -140V(Min) ·Complement to Type TIP31E APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Pulse -5 A IBB Base Current -1 A Collector Power Dissipation PC TC=25? 40 W Tj Junction Temperature 150 ? Storage Ttemperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 3.125 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP32E ELECTRICAL

1.19. tip32_abc.pdf Size:244K _lge

TIP32
TIP32
TIP32/32A/32B/32C TO-220 Transistor (PNP) TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Medium Power Linear Switching Applications Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter TIP32 TIP32A TIP32B TIP32C Units VCBO Collector-Base Voltage -40 -60 -80 -100 V VCEO Collector-Emitter Voltage -40 -60 -80 -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation 2 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -55to+150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage TIP32 -40 TIP32A -60 V(BR)CBO IC= -1mA, IE=0 V TIP32B -80 TIP32C -100 Collector-emitter breakdown voltage * TIP32 -40 TIP32A -60 V(BR)CEO IC= -30mA, IB=0 V TIP32B -80 TIP32C -100 Emitter-base breakdown voltage V(BR)EBO IE= -1mA, IC=0 -5 V

See also transistors datasheet: TIP30F , TIP31 , TIP31A , TIP31B , TIP31C , TIP31D , TIP31E , TIP31F , SS8050 , TIP32A , TIP32B , TIP32C , TIP32D , TIP32E , TIP32F , TIP33 , TIP33A .

Keywords

 TIP32 Datasheet  TIP32 Datenblatt  TIP32 RoHS  TIP32 Distributor
 TIP32 Application Notes  TIP32 Component  TIP32 Circuit  TIP32 Schematic
 TIP32 Equivalent  TIP32 Cross Reference  TIP32 Data Sheet  TIP32 Fiche Technique

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