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TIP36
  TIP36
  TIP36
 
TIP36
  TIP36
  TIP36
 
TIP36
  TIP36
 
 
List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
TIP36 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

TIP36 Transistor Datasheet. Parameters and Characteristics.

Type Designator: TIP36

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 90

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 25

Maksimalna temperatura (Tj), ¬įC: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of TIP36 transistor: TO218

TIP36 Equivalent Transistors - Cross-Reference Search

TIP36 PDF doc:

1.1. tip35c_tip36c.pdf Size:194K _st2

TIP36
TIP36
TIP35C TIP36C Complementary power transistors . Features ¶ Low collector-emitter saturation voltage ¶ Complementary NPN - PNP transistors Applications ¶ General purpose 3 2 ¶ Audio amplifier 1 TO-247 Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with ďbase islandĒ layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Table 1. Device summary Order code Marking Package Packaging TIP35C TIP35C TO-247 Tube TIP36C TIP36C September 2008 Rev 5 1/9 www.st.com 9 Electrical ratings TIP35C - TIP36C 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit NPN TIP35C PNP TIP36C VCBO Collector-base voltage (IE = 0) 100 V VCEO Collector-emitter voltage (IB = 0) 100 V VEBO Emitter-base voltage (IC = 0) 5 V IC Collector current 25 A ICM Collector peak current (tP < 5 ms) 50 A IB Base current 5 A Ptot Total dissipatio

1.2. tip35cp_tip36cp.pdf Size:196K _st2

TIP36
TIP36
TIP35CP TIP36CP Complementary power transistors . Features ¶ Low collector-emitter saturation voltage ¶ Complementary NPN-PNP transistors Applications ¶ General purpose 3 ¶ Audio amplifier 2 1 TO-3P Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with ďbase islandĒ layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Table 1. Device summary Order code Marking Package Packaging TIP35CP TIP35CP TO-3P Tube TIP36CP TIP36CP September 2008 Rev 2 1/9 www.st.com 9 Electrical ratings TIP35CP - TIP36CP 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit NPN TIP35CP PNP TIP36CP VCBO Collector-base voltage (IE = 0) 100 V VCEO Collector-emitter voltage (IB = 0) 100 V VEBO Emitter-base voltage (IC = 0) 5 V IC Collector current 25 A ICM Collector peak current (tP < 5 ms) 50 A IB Base current 5 A Ptot Total dissi

1.3. tip35a_tip35b_tip35c_tip36a_tip36b_tip36c.pdf Size:80K _onsemi

TIP36
TIP36
TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) TIP35B, TIP35C, TIP36B, and TIP36C are Preferred Devices Complementary Silicon High-Power Transistors http://onsemi.com Designed for general-purpose power amplifier and switching applications. 25 AMPERE Features COMPLEMENTARY SILICON ē 25 A Collector Current POWER TRANSISTORS ē Low Leakage Current - 60-100 VOLTS, 125 WATTS ICEO = 1.0 mA @ 30 and 60 V ē Excellent DC Gain - hFE = 40 Typ @ 15 A ē High Current Gain Bandwidth Product - ?hfe? = 3.0 min @ IC = 1.0 A, f = 1.0 MHz ē Pb-Free Packages are Available* SOT-93 (TO-218) MAXIMUM RATINGS CASE 340D STYLE 1 TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C Rating Symbol Unit Collector - Emitter Voltage VCEO 60 80 100 Vdc Collector - Base Voltage VCB 60 80 100 Vdc Emitter - Base Voltage VEB 5.0 Vdc MARKING DIAGRAM Collector Current IC Adc 25 - Continuous 40 - Peak (Note 1) Base Current - Continuous IB 5.0 Adc Total Power Dissipation PD 125 AYWWG

1.4. tip36-a-b-c.pdf Size:86K _bourns

TIP36
TIP36
TIP36, TIP36A, TIP36B, TIP36C PNP SILICON POWER TRANSISTORS ? Designed for Complementary Use with the SOT-93 PACKAGE (TOP VIEW) TIP35 Series ? 125 W at 25įC Case Temperature B 1 ? 25 A Continuous Collector Current C 2 ? 40 A Peak Collector Current ? Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25įC case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT TIP36 -80 TIP36A -100 Collector-base voltage (IE = 0) VCBO V TIP36B -120 TIP36C -140 TIP36 -40 TIP36A -60 Collector-emitter voltage (IB = 0) VCEO V TIP36B -80 TIP36C -100 Emitter-base voltage VEBO -5 V Continuous collector current IC -25 A Peak collector current (see Note 1) ICM -40 A Continuous base current IB -5 A Continuous device dissipation at (or below) 25įC case temperature (see Note 2) Ptot 125 W Continuous device dissipation at (or below) 25įC free air temperature (see Note 3) Ptot 3.5 W Uncla

1.5. tip35_tip36.pdf Size:154K _mospec

TIP36
TIP36
A A A

1.6. tip35f_tip36.pdf Size:67K _cdil

TIP36
TIP36
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS TIP35F, AF, BF, CF NPN TIP36F, AF, BF, CF PNP TO- 3PF Fully Isolated Plastic Package B C E For General Purpose Power Amplifier and Switching Applications. ABSOLUTE MAXIMUM RATINGS TIP35F TIP35AF TIP35BF TIP35CF DESCRIPTION SYMBOL UNIT TIP36F TIP36AF TIP36BF TIP36CF VCEO Collector Emitter Voltage 40 60 80 100 V VCBO Collector Base Voltage 40 60 80 100 V VEBO 5.0 Emitter Base Voltage V IC 25 Collector Current Continuous A ICM 40 Collector Current Peak A IB 5.0 Base Current Continuous A Collector Power Dissipation at Tc=25?C PC 125 W Operating and Storage Junction Tj, Tstg - 65 to +150 ?C Temperature Range THERMAL CHARACTERISTICS Rth (j-c) 1.0 Thermal Resistance, Junction to Case ?C/W ELECTRICAL CHARACTERISTICS (Tj=25?C unless specified otherwise) MIN TYP MAX DESCRIPTION SYMBOL TEST CONDITION UNIT *VCEO (sus) IC=30mA, IB=0 Collector Emitter

1.7. tip36ca.pdf Size:440K _kec

TIP36
TIP36
SEMICONDUCTOR TIP36CA TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B N FEATURES O K Recommended for 75W Audio Frequency DIM MILLIMETERS Amplifier Output Stage. _ A + 15.60 0.20 _ B 4.80 + 0.20 Complementary to TIP35CA. _ C 19.90 + 0.20 _ D 2.00 0.20 + Icmax:-25A. _ d + 1.00 0.20 _ E + 3.00 0.20 _ F 3.80 + 0.20 D _ G 3.50 + 0.20 E _ H 13.90 0.20 + _ I 12.76 + 0.20 M d _ J 23.40 + 0.20 MAXIMUM RATING (Ta=25 ) K 1.5+0.15-0.05 _ L 16.50 + 0.30 CHARACTERISTIC SYMBOL RATING UNIT _ P P M 1.40 + 0.20 T _ N 13.60 + 0.20 VCBO -100 V Collector-Base Voltage _ O 9.60 + 0.20 _ P 5.45 + 0.30 VCEO -100 V Collector-Emitter Voltage 1 2 3 Q _ 3.20 + 0.10 _ R 18.70 + 0.20 VEBO Emitter-Base Voltage -5 V T 0.60+0.15-0.05 1. BASE IC Collector Current -25 A 2. COLLECTOR (HEAT SINK) 3. EMITTER IB Base Current -5.0 A Collector Power Dissipation TO-3P(N)-E PC 125 W (Tc=25 ) Tj Junction Temp

1.8. tip36c.pdf Size:289K _kec

TIP36
TIP36
SEMICONDUCTOR TIP36C TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B K FEATURES Recommended for 75W Audio Frequency Amplifier Output Stage. DIM MILLIMETERS Complementary to TIP35C. A 15.9 MAX B 4.8 MAX Icmax:-25A. _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 G 3.3 MAX d H 9.0 MAXIMUM RATING (Ta=25 ) I 4.5 P PT J 2.0 M CHARACTERISTIC SYMBOL RATING UNIT K 1.8 MAX _ + L 20.5 0.5 VCBO -100 V Collector-Base Voltage M 2.8 _ P 5.45 + 0.2 VCEO -100 V Collector-Emitter Voltage 1 2 3 _ ?3.2 0.2 Q + T 0.6+0.3/-0.1 VEBO 1. BASE Emitter-Base Voltage -5 V 2. COLLECTOR IC Collector Current -25 A 3. EMITTER IB Base Current -5.0 A Collector Power Dissipation PC TO-3P(N) 125 W (Tc=25 ) Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-100V, IE=0 Collector Cut-off Current

1.9. tip36f.pdf Size:134K _inchange_semiconductor

TIP36
TIP36
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor TIP36F DESCRIPTION ·DC Current Gain- : hFE= 25(Min)@IC = -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -160V(Min) ·Complement to Type TIP35F ·Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= -1.0A APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -25 A ICM Collector Current-peak -40 A IBB Base Current -5 A PC Collector Power Dissipation@ TC=25? 125 W Junction Temperature 150 ? Tj Storage Temperature -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.0 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification i

1.10. tip36_36a_36b_36c.pdf Size:141K _inchange_semiconductor

TIP36
TIP36
Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-3PN package Ў¤ Complement to type TIP35/35A/35B/35C Ў¤ DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS Ў¤ Designed for use in general purpose power amplifier and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP36/36A/36B/36C Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO Collector-base voltage PARAMETER TIP36 TIP36A TIP36B VCEO CHA IN Collector current E SEM NG TIP36C TIP36 TIP36A Open base TIP36B TIP36C Open emitter DUC CON I CONDITIONS VALUE -40 TOR UNIT -60 V -80 -100 -40 -60 V -80 -100 Collector-emitter voltage VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Open collector -5 -25 -40 -5 V A A A W Ўж Ўж Collector current-peak Base current Collector power dissipation Junction tem

1.11. tip36e.pdf Size:227K _inchange_semiconductor

TIP36
TIP36
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor TIP36E DESCRIPTION ·DC Current Gain- : hFE= 25(Min)@IC = -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -140V(Min) ·Complement to Type TIP35E ·Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= -1.0A APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -25 A ICM Collector Current-peak -40 A IBB Base Current -5 A PC Collector Power Dissipation@ TC=25? 125 W Junction Temperature 150 ? Tj Storage Temperature -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.0 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product S

1.12. tip36d.pdf Size:227K _inchange_semiconductor

TIP36
TIP36
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor TIP36D DESCRIPTION ·DC Current Gain- : hFE= 25(Min)@IC = -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -120V(Min) ·Complement to Type TIP35D ·Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= -1.0A APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -25 A ICM Collector Current-peak -40 A IBB Base Current -5 A PC Collector Power Dissipation@ TC=25? 125 W Junction Temperature 150 ? Tj Storage Temperature -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.0 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product S

See also transistors datasheet: TIP34F , TIP35 , TIP35A , TIP35B , TIP35C , TIP35D , TIP35E , TIP35F , BEL187 , TIP36A , TIP36B , TIP36C , TIP36D , TIP36E , TIP36F , TIP41 , TIP41A .

Keywords

 TIP36 Datasheet  TIP36 Datenblatt  TIP36 RoHS  TIP36 Distributor
 TIP36 Application Notes  TIP36 Component  TIP36 Circuit  TIP36 Schematic
 TIP36 Equivalent  TIP36 Cross Reference  TIP36 Data Sheet  TIP36 Fiche Technique

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