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TIP36 Transistor (IC) Datasheet. Cross Reference Search. TIP36 Equivalent

Type Designator: TIP36

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 90

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 25

Maksimalna temperatura (Tj), ¬įC: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of TIP36 transistor: TO218

TIP36 Transistor Equivalent Substitute - Cross-Reference Search

TIP36 PDF:

1.1. tip35c_tip36c.pdf Size:194K _st2

TIP36
TIP36

TIP35C TIP36C Complementary power transistors . Features ¶ Low collector-emitter saturation voltage ¶ Complementary NPN - PNP transistors Applications ¶ General purpose 3 2 ¶ Audio amplifier 1 TO-247 Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with ďbase islandĒ layout. The resulting transistors show exceptional high gai

1.2. tip35cp_tip36cp.pdf Size:196K _st2

TIP36
TIP36

TIP35CP TIP36CP Complementary power transistors . Features ¶ Low collector-emitter saturation voltage ¶ Complementary NPN-PNP transistors Applications ¶ General purpose 3 ¶ Audio amplifier 2 1 TO-3P Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with ďbase islandĒ layout. The resulting transistors show exceptional high gain

1.3. tip35a_tip35b_tip35c_tip36a_tip36b_tip36c.pdf Size:80K _onsemi

TIP36
TIP36

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) TIP35B, TIP35C, TIP36B, and TIP36C are Preferred Devices Complementary Silicon High-Power Transistors http://onsemi.com Designed for general-purpose power amplifier and switching applications. 25 AMPERE Features COMPLEMENTARY SILICON ē 25 A Collector Current POWER TRANSISTORS ē Low Leakage Current - 60-100 VOLTS, 125 WATTS

1.4. tip36c.pdf Size:170K _utc

TIP36
TIP36

UNISONIC TECHNOLOGIES CO., LTD TIP36C PNP SILICON TRANSISTOR HIGH POWER TRANSISTORS ? DESCRIPTION The UTC TIP36C is a PNP Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP35C. ? INTERNAL SCHEMATIC DIAGRAM C (2) (1) B E (3) ? ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Ha

1.5. tip36-a-b-c.pdf Size:86K _bourns

TIP36
TIP36

TIP36, TIP36A, TIP36B, TIP36C PNP SILICON POWER TRANSISTORS ? Designed for Complementary Use with the SOT-93 PACKAGE (TOP VIEW) TIP35 Series ? 125 W at 25įC Case Temperature B 1 ? 25 A Continuous Collector Current C 2 ? 40 A Peak Collector Current ? Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings

1.6. tip35_tip36.pdf Size:154K _mospec

TIP36
TIP36

A A A

1.7. tip35f_tip36.pdf Size:67K _cdil

TIP36
TIP36

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS TIP35F, AF, BF, CF NPN TIP36F, AF, BF, CF PNP TO- 3PF Fully Isolated Plastic Package B C E For General Purpose Power Amplifier and Switching Applications. ABSOLUTE MAXIMUM RATINGS TIP35F TIP35AF TIP35BF TIP35CF DESCRIPTION SYMBOL UNIT TIP36F TIP36AF TIP36BF TIP36CF VCEO Co

1.8. tip36ca.pdf Size:440K _kec

TIP36
TIP36

SEMICONDUCTOR TIP36CA TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B N FEATURES O K Recommended for 75W Audio Frequency DIM MILLIMETERS Amplifier Output Stage. _ A + 15.60 0.20 _ B 4.80 + 0.20 Complementary to TIP35CA. _ C 19.90 + 0.20 _ D 2.00 0.20 + Icmax:-25A. _ d + 1.00 0.20 _ E + 3.00 0.20 _ F 3.80 + 0.20 D _ G 3.50 + 0

1.9. tip36c.pdf Size:289K _kec

TIP36
TIP36

SEMICONDUCTOR TIP36C TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B K FEATURES Recommended for 75W Audio Frequency Amplifier Output Stage. DIM MILLIMETERS Complementary to TIP35C. A 15.9 MAX B 4.8 MAX Icmax:-25A. _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 G 3.3 MAX d H 9.0 MAXIMUM RATING (Ta=25 ) I 4.5 P PT J 2.0 M

1.10. tip36f.pdf Size:134K _inchange_semiconductor

TIP36
TIP36

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor TIP36F DESCRIPTION ·DC Current Gain- : hFE= 25(Min)@IC = -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -160V(Min) ·Complement to Type TIP35F ·Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= -1.0A APPLICATIONS ·Designed for use in general purpose power amplifier and switch

1.11. tip36e.pdf Size:227K _inchange_semiconductor

TIP36
TIP36

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor TIP36E DESCRIPTION ·DC Current Gain- : hFE= 25(Min)@IC = -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -140V(Min) ·Complement to Type TIP35E ·Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= -1.0A APPLICATIONS ·Designed for use in general purpose power amplifier and switch

1.12. tip36d.pdf Size:227K _inchange_semiconductor

TIP36
TIP36

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor TIP36D DESCRIPTION ·DC Current Gain- : hFE= 25(Min)@IC = -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -120V(Min) ·Complement to Type TIP35D ·Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= -1.0A APPLICATIONS ·Designed for use in general purpose power amplifier and switch

1.13. tip36_36a_36b_36c.pdf Size:141K _inchange_semiconductor

TIP36
TIP36

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-3PN package Ў¤ Complement to type TIP35/35A/35B/35C Ў¤ DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS Ў¤ Designed for use in general purpose power amplifier and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP36/36A/36B/3

See also transistors datasheet: TIP34F , TIP35 , TIP35A , TIP35B , TIP35C , TIP35D , TIP35E , TIP35F , BEL187 , TIP36A , TIP36B , TIP36C , TIP36D , TIP36E , TIP36F , TIP41 , TIP41A .

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