TIP36B Transistor Datasheet. Parameters and Characteristics.

Type Designator: TIP36B

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 90

Maximum collector-base voltage |Ucb|, V: 120

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 25

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of TIP36B transistor: TO218

TIP36B Equivalent Transistors - Cross-Reference Search

TIP36B PDF document for downloads:

1.1. tip35a_tip35b_tip35c_tip36a_tip36b_tip36c.pdf Size:80K _onsemi

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) TIP35B, TIP35C, TIP36B, and TIP36C are Preferred Devices Complementary Silicon High-Power Transistors http://onsemi.com Designed for general-purpose power amplifier and switching applications. 25 AMPERE Features COMPLEMENTARY SILICON • 25 A Collector Current POWER TRANSISTORS • Low Leakage Current - 60-100 VOLTS, 125 WATTS ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain - hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product - ?hfe? = 3.0 min @ IC = 1.0 A, f = 1.0 MHz • Pb-Free Packages are Available* SOT-93 (TO-218) MAXIMUM RATINGS CASE 340D STYLE 1 TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C Rating Symbol Unit Collector - Emitter Voltage VCEO 60 80 100 Vdc Collector - Base Voltage VCB 60 80 100 Vdc Emitter - Base Voltage VEB 5.0 Vdc MARKING DIAGRAM Collector Current IC Adc 25 - Continuous 40 - Peak (Note 1) Base Current - Continuous IB 5.0 Adc Total Power Dissipation PD 125 AYWWG

5.1. tip35c_tip36c.pdf Size:194K _st2

TIP35C TIP36C Complementary power transistors . Features ¦ Low collector-emitter saturation voltage ¦ Complementary NPN - PNP transistors Applications ¦ General purpose 3 2 ¦ Audio amplifier 1 TO-247 Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Table 1. Device summary Order code Marking Package Packaging TIP35C TIP35C TO-247 Tube TIP36C TIP36C September 2008 Rev 5 1/9 www.st.com 9 Electrical ratings TIP35C - TIP36C 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit NPN TIP35C PNP TIP36C VCBO Collector-base voltage (IE = 0) 100 V VCEO Collector-emitter voltage (IB = 0) 100 V VEBO Emitter-base voltage (IC = 0) 5 V IC Collector current 25 A ICM Collector peak current (tP < 5 ms) 50 A IB Base current 5 A Ptot Total dissipatio

5.2. tip35cp_tip36cp.pdf Size:196K _st2

TIP35CP TIP36CP Complementary power transistors . Features ¦ Low collector-emitter saturation voltage ¦ Complementary NPN-PNP transistors Applications ¦ General purpose 3 ¦ Audio amplifier 2 1 TO-3P Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Table 1. Device summary Order code Marking Package Packaging TIP35CP TIP35CP TO-3P Tube TIP36CP TIP36CP September 2008 Rev 2 1/9 www.st.com 9 Electrical ratings TIP35CP - TIP36CP 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit NPN TIP35CP PNP TIP36CP VCBO Collector-base voltage (IE = 0) 100 V VCEO Collector-emitter voltage (IB = 0) 100 V VEBO Emitter-base voltage (IC = 0) 5 V IC Collector current 25 A ICM Collector peak current (tP < 5 ms) 50 A IB Base current 5 A Ptot Total dissi

5.3. tip36-a-b-c.pdf Size:86K _bourns

TIP36, TIP36A, TIP36B, TIP36C PNP SILICON POWER TRANSISTORS ? Designed for Complementary Use with the SOT-93 PACKAGE (TOP VIEW) TIP35 Series ? 125 W at 25°C Case Temperature B 1 ? 25 A Continuous Collector Current C 2 ? 40 A Peak Collector Current ? Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT TIP36 -80 TIP36A -100 Collector-base voltage (IE = 0) VCBO V TIP36B -120 TIP36C -140 TIP36 -40 TIP36A -60 Collector-emitter voltage (IB = 0) VCEO V TIP36B -80 TIP36C -100 Emitter-base voltage VEBO -5 V Continuous collector current IC -25 A Peak collector current (see Note 1) ICM -40 A Continuous base current IB -5 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 125 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 3.5 W Uncla

5.4. tip35_tip36.pdf Size:154K _mospec

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5.5. tip36c.pdf Size:289K _kec

SEMICONDUCTOR TIP36C TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B K FEATURES Recommended for 75W Audio Frequency Amplifier Output Stage. DIM MILLIMETERS Complementary to TIP35C. A 15.9 MAX B 4.8 MAX Icmax:-25A. _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 G 3.3 MAX d H 9.0 MAXIMUM RATING (Ta=25 ) I 4.5 P PT J 2.0 M CHARACTERISTIC SYMBOL RATING UNIT K 1.8 MAX _ + L 20.5 0.5 VCBO -100 V Collector-Base Voltage M 2.8 _ P 5.45 + 0.2 VCEO -100 V Collector-Emitter Voltage 1 2 3 _ ?3.2 0.2 Q + T 0.6+0.3/-0.1 VEBO 1. BASE Emitter-Base Voltage -5 V 2. COLLECTOR IC Collector Current -25 A 3. EMITTER IB Base Current -5.0 A Collector Power Dissipation PC TO-3P(N) 125 W (Tc=25 ) Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-100V, IE=0 Collector Cut-off Current

5.6. tip36ca.pdf Size:440K _kec

SEMICONDUCTOR TIP36CA TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B N FEATURES O K Recommended for 75W Audio Frequency DIM MILLIMETERS Amplifier Output Stage. _ A + 15.60 0.20 _ B 4.80 + 0.20 Complementary to TIP35CA. _ C 19.90 + 0.20 _ D 2.00 0.20 + Icmax:-25A. _ d + 1.00 0.20 _ E + 3.00 0.20 _ F 3.80 + 0.20 D _ G 3.50 + 0.20 E _ H 13.90 0.20 + _ I 12.76 + 0.20 M d _ J 23.40 + 0.20 MAXIMUM RATING (Ta=25 ) K 1.5+0.15-0.05 _ L 16.50 + 0.30 CHARACTERISTIC SYMBOL RATING UNIT _ P P M 1.40 + 0.20 T _ N 13.60 + 0.20 VCBO -100 V Collector-Base Voltage _ O 9.60 + 0.20 _ P 5.45 + 0.30 VCEO -100 V Collector-Emitter Voltage 1 2 3 Q _ 3.20 + 0.10 _ R 18.70 + 0.20 VEBO Emitter-Base Voltage -5 V T 0.60+0.15-0.05 1. BASE IC Collector Current -25 A 2. COLLECTOR (HEAT SINK) 3. EMITTER IB Base Current -5.0 A Collector Power Dissipation TO-3P(N)-E PC 125 W (Tc=25 ) Tj Junction Temp

5.7. tip36f.pdf Size:134K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor TIP36F DESCRIPTION ·DC Current Gain- : hFE= 25(Min)@IC = -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -160V(Min) ·Complement to Type TIP35F ·Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= -1.0A APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -25 A ICM Collector Current-peak -40 A IBB Base Current -5 A PC Collector Power Dissipation@ TC=25? 125 W Junction Temperature 150 ? Tj Storage Temperature -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.0 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification i

5.8. tip36_36a_36b_36c.pdf Size:141K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-3PN package Ў¤ Complement to type TIP35/35A/35B/35C Ў¤ DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS Ў¤ Designed for use in general purpose power amplifier and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP36/36A/36B/36C Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO Collector-base voltage PARAMETER TIP36 TIP36A TIP36B VCEO CHA IN Collector current E SEM NG TIP36C TIP36 TIP36A Open base TIP36B TIP36C Open emitter DUC CON I CONDITIONS VALUE -40 TOR UNIT -60 V -80 -100 -40 -60 V -80 -100 Collector-emitter voltage VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Open collector -5 -25 -40 -5 V A A A W Ўж Ўж Collector current-peak Base current Collector power dissipation Junction tem

5.9. tip36d.pdf Size:227K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor TIP36D DESCRIPTION ·DC Current Gain- : hFE= 25(Min)@IC = -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -120V(Min) ·Complement to Type TIP35D ·Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= -1.0A APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -25 A ICM Collector Current-peak -40 A IBB Base Current -5 A PC Collector Power Dissipation@ TC=25? 125 W Junction Temperature 150 ? Tj Storage Temperature -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.0 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product S

5.10. tip36e.pdf Size:227K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor TIP36E DESCRIPTION ·DC Current Gain- : hFE= 25(Min)@IC = -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -140V(Min) ·Complement to Type TIP35E ·Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= -1.0A APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -25 A ICM Collector Current-peak -40 A IBB Base Current -5 A PC Collector Power Dissipation@ TC=25? 125 W Junction Temperature 150 ? Tj Storage Temperature -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.0 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product S

See also transistors datasheet: TIP35A , TIP35B , TIP35C , TIP35D , TIP35E , TIP35F , TIP36 , TIP36A , 2N5133 , TIP36C , TIP36D , TIP36E , TIP36F , TIP41 , TIP41A , TIP41B , TIP41C .

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