TIP41 Transistor Datasheet. Parameters and Characteristics.

Type Designator: TIP41

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 65

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 6

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of TIP41 transistor: TO220

TIP41 Equivalent Transistors - Cross-Reference Search

TIP41 PDF document for downloads:

1.1. tip41are.pdf Size:222K _motorola

Order this document MOTOROLA by TIP41A/D SEMICONDUCTOR TECHNICAL DATA NPN TIP41A Complementary Silicon Plastic TIP41B* Power Transistors TIP41C* . . . designed for use in general purpose amplifier and switching applications. PNP • Collector–Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc TIP42A • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc (Min) — TIP41A, TIP42A TIP42B* VCEO(sus) = 80 Vdc (Min) — TIP41B, TIP42B VCEO(sus) = 100 Vdc (Min) — TIP41C, TIP42C • High Current Gain — Bandwidth Product TIP42C* IIIIIIIIIIIIIIIIIIIIIII fT = 3.0 MHz (Min) @ IC = 500 mAdc *Motorola Preferred Device • Compact TO–220 AB Package IIIIIIIIIIIIIIIIIIIIIII 6 AMPERE IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIII III III III POWER TRANSISTORS *MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIII IIIIIIIIIII IIII IIII III III III III III III COMPLEMENTARY TIP41AIII TIP41CIII TIP41B IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III

1.2. tip41-42c.pdf Size:66K _st2

TIP41A/41B/41C TIP42A/42B/42C COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP41A, TIP41B and TIP41C are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications. The complementary PNP types are TIP42A, TIP42B and TIP42C. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN TIP41A TIP41B TIP41C PNP TIP42A TIP42B TIP42C V Collector-Base Voltage (I = 0) 60 80 100 V CBO E VCEO Collector-Emitter Voltage (IB = 0) 60 80 100 V VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 6 A ICM Collector Peak Current 10 A I Base Current 3 A B P Total Dissipation at T ? 25 oC 65 W tot case Tamb ? 25 oC 2 W o Tstg Storage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C 1/4 October 1995 TIP41A/TIP41B/TIP41C/TIP42A/TIP42B/TIP42C THERMAL DATA o Rthj-case T

1.3. tip41.pdf Size:39K _st2

TIP41A/41B/41C TIP42A/42B/42C COMPLEMENTARY SILICON POWER TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP41A, TIP41B and TIP41C are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications. The complementary PNP types are TIP42A, TIP42B and TIP42C. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN TIP41A TIP41B TIP41C PNP TIP42A TIP42B TIP42C V Collector-Base Voltage (I = 0) 60 80 100 V CBO E VCEO Collector-Emitter Voltage (IB = 0) 60 80 100 V V Emitter-Base Voltage (I = 0) 5 V EBO C IC Collector Current 6 A ICM Collector Peak Current 10 A I Base Current 3 A B P Total Dissipation at T ? 25 oC 65 W tot case T ? 25 oC 2 W amb o Tstg Storage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C 1/4 October 1995 TIP41A/TIP41B/TIP41C/TIP42A/TIP42B/TIP42C THERMAL DATA o Rthj-ca s

1.4. tip41c_tip42c.pdf Size:275K _st2

TIP41C TIP42C Complementary power transistors . Features ¦ Complementary PNP-NPN devices ¦ New enhanced series ¦ High switching speed ¦ hFE grouping ¦ hFE improved linearity 3 2 1 Applications TO-220 ¦ General purpose circuits ¦ Audio amplifier Figure 1. Internal schematic diagram ¦ Power linear and switching Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching applications. The complementary PNP type is TIP42C Table 1. Device summary Order code Marking Package Packaging TIP41C R TIP41C (Note 1 on page 4) TIP41C O TO-220 Tube TIP41C Y TIP42C R TIP42C (Note 1 on page 4) TIP42C O TO-220 Tube TIP42C Y November 2007 Rev 2 1/12 www.st.com 12 Contents TIP41C - TIP42C Contents 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . .

1.5. tip41a_tip42a.pdf Size:205K _st2

TIP41A TIP42A COMPLEMENTARY SILICON POWER TRANSISTOR Features ¦ COMPLEMENTARY PNP-NPN DEVICES ¦ NEW ENHANCED SERIES ¦ HIGH SWITCHING SPEED ¦ hFE IMPROVED LINEARITY 3 2 Applications 1 ¦ GENERAL PURPOSE CIRCUITS TO-220 ¦ AUDIO AMPLIFIER ¦ POWER LINEAR AND SWITCHING Description Internal Schematic Diagram The TIP41A is a silicon base island technology NPN power transistor Jedec TO-220 plastic package with improved performances than the industry standard TIP41A that make this device suitable for audio, power linear and switching applications. The complementary PNP type is TIP42A. Order Codes Part Number Marking Package Packing TIP41A TIP41A TO-220 TUBE TIP42A TIP42A TO-220 TUBE rev.1 October 2005 1/10 www.st.com 10 1 Absolute Maximum Ratings TIP42A 1 Absolute Maximum Ratings Table 1. Absolute Maximum Ratings Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 60 V VCEO Collector-Emitter Voltage (IB = 0) 60 V VEBO Emitte-Base Voltage (

1.6. tip41_tip41a_tip41b_tip41c.pdf Size:527K _fairchild_semi

1.7. tip41abc.pdf Size:39K _fairchild_semi

1.8. tip41.pdf Size:50K _samsung

TIP41 SERIES (TIP41/41A/41B/41C) NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR TO-220 SWITCHING APPLICATIONS • Complement to TIP42/42A/42B/42C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage : TIP41 VCBO 40 V : TIP41A 60 V : TIP41B 80 V : TIP41C 100 V Collector Emitter Voltage : TIP41 VCEO 40 V : TIP41A 60 V : TIP41B 80 V 1.Base 2.Collector 3.Emitter : TIP41C 100 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 6 A Collector Current (Pulse) IC 10 A Base Current IB 2 A Collector Dissipation ( TC=25 ) PC 65 W Collector Dissipation ( TA=25 ) PC 2 W Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 ELECTRICAL CHARACTERISTICS (TC =25 ) Characteristic Symbol Test Conditions Min Max Unit *Collector Emitter Sustaining Voltage : TIP41 BVCEO(sus) IC = 30mA, IB = 0 40 V : TIP41A 60 V : TIP41B 80 V : TIP41C 100 V Collector Cutoff Current : TIP41/41A ICEO VCE = 30V, IB = 0 0.7 mA : TIP41B/

1.9. tip41-a-b-c.pdf Size:339K _central

TIP41 TIP41A TIP41B www.centralsemi.com TIP41C DESCRIPTION: NPN SILICON The CENTRAL SEMICONDUCTOR TIP41 SERIES POWER TRANSISTOR types are NPN Epitaxial-Base Silicon Power Transistors designed for power amplifier and high speed switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) SYMBOL TIP41 TIP41A TIP41B TIP41C UNITS Collector-Base Voltage VCBO 40 60 80 100 V Collector-Emitter Voltage VCEO 40 60 80 100 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 6.0 A Peak Collector Current ICM 10 A Continuous Base Current IB 2.0 A Power Dissipation PD 65 W Power Dissipation (TA=25°C) PD 2.0 W Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICEO VCE=30V (TIP41, TIP41A) 0.7 mA ICEO VCE=60V (TIP41B, TIP41C) 0.7 mA ICES VCE=Rated VCEO 0.4 mA IEBO VEB=5.0V 1.0 mA BVCEO IC=30mA (TIP41) 40 V BVCEO I

1.10. tip41_tip41a_tip41b_tip41c_to-220.pdf Size:248K _mcc

MCC Micro Commercial Components TM TIP41/41A/41B/41C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Silicon NPN • The complementary PNP types are the TIP42 respectively • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 Power Transistors • Marking : Part Number Absolute Maximum Ratings @ Ta = 25? (unless otherwise noted) Symbol Parameter Value Unit TO-220 VCBO 40 TIP41 B C Collector-base voltage 60 V TIP41A (Open emitter) 80 S F TIP41B 100 TIP41C VCEO Q 40 TIP41 T Collector-emitter voltage 60 V TIP41A (Open base) 80 TIP41B A 100 TIP41C U VEBO Emitter-base Voltage (Open collector) 5 V IC Collector Current 6 A 1 2 3 ICM Collector Current Pulse 10 A H IB Base Current 2 A Total Device Dissipation(Ta=25?) 2

1.11. tip41_tip41a_tip41b_tip41c_tip42_tip42a_tip42b_tip42c.pdf Size:93K _onsemi

TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. 6 AMPERE Features COMPLEMENTARY SILICON • ESD Ratings: Machine Model, C; > 400 V POWER TRANSISTORS Human Body Model, 3B; > 8000 V 40-60-80-100 VOLTS, • Epoxy Meets UL 94 V-0 @ 0.125 in 65 WATTS • Pb-Free Packages are Available* MAXIMUM RATINGS MARKING DIAGRAM Rating Symbol Value Unit Collector-Emitter Voltage TIP41, TIP42 VCEO 40 Vdc 4 TIP41A, TIP42A 60 TIP41B, TIP42B 80 TIP41C, TIP42C 100 Collector-Base Voltage TIP41, TIP42 VCB 40 Vdc TO-220AB TIP4xxG TIP41A, TIP42A 60 CASE 221A AYWW TIP41B, TIP42B 80 STYLE 1 TIP41C, TIP42C 100 1 2 3 Emitter-Base Voltage VEB 5.0 Vdc Collector Current- Continuous IC 6.0 Adc Peak 10 TIP4xx = Device Code Base Current IB 2.0 Adc xx = 1, 1A, 1B, 1C Total Power Dissipation @ TC = 25°C PD 65 W 2, 2A, 2B, 2C

1.12. tip41c.pdf Size:88K _utc

UTC TIP41C NPN EPITAXIAL PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP41C is a NPN expitaxial planar transistor, designed for using in general purpose amplifier and switching applications. 1 FEATURE *Complement to tip42C TO-220 1:BASE 2:COLLECTOR 3:EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Collector Base Voltage VCBO 100 V Collector to Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Collector Current(DC) Ic 6 A Collector Current(Pulse) Ic 10 A Base Current IB 2 A Collector Dissipation(Tc=25°C) Pc 65 W Collector Dissipation(Ta=25°C) Pc 2 W Junction Temperature Tj 150 °C Storage Temperature Tstg -65 ~ +150 °C ELECTRICAL CHARACTERISTICS(Tc=25°C) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Emitter Sustaining voltage(*) BVCEO IC=30mA,IB=0 100 V Collector cutoff Current ICEO VCE=60V,IB=0 0.7 mA Collector Cutoff Current ICES VCE=100V,VEB=0 400 µA Emitter Cutoff current IEBO VBE=5V,Ic=0 1 mA

1.13. tip41_tip42.pdf Size:189K _mospec

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1.14. tip41cf.pdf Size:436K _kec

SEMICONDUCTOR TIP41CF TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Complementary to TIP42CF. _ A 10.0 + 0.3 _ + B 15.0 0.3 E C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E ?3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + MAXIMUM RATING (Ta=25 ) H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L CHARACTERISTIC SYMBOL RATING UNIT R K _ 3.7 0.2 + L 1.2+0.25/-0.1 M VCBO Collector-Base Voltage 100 V 1.5+0.25/-0.1 M D D _ N 2.54 0.1 + VCEO Collector-Emitter Voltage 100 V _ P 6.8 0.1 + _ Q 4.5 0.2 + VEBO Emitter-Base Voltage 5 V _ + R 2.6 0.2 N N H S 0.5 Typ IC DC 6 Collector Current A ICP Pulse 10 1. BASE 1 2 3 IB Base Current 2 A 2. COLLECTOR 2 W Ta=25 3. EMITTER Collector Power PC Dissipation 25 W Tc=25 TO-220IS Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCEO(SUS

1.15. tip41c.pdf Size:67K _kec

SEMICONDUCTOR TIP41C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A R FEATURES S Complementary to TIP42C. P D DIM MILLIMETERS A 10.30 MAX B 15.30 MAX C 0.80 MAXIMUM RATING (Ta=25 ) _ + D ?3.60 0.20 T E 3.00 CHARACTERISTIC SYMBOL RATING UNIT F 6.70 MAX _ G 13.60 + 0.50 VCBO L Collector-Base Voltage 100 V H 5.60 MAX C C J 1.37 MAX VCEO Collector-Emitter Voltage 100 V K 0.50 L 1.50 MAX M M VEBO Emitter-Base Voltage 5 V M 2.54 K N 4.70 MAX IC DC 6 O 2.60 1 2 3 P 1.50 MAX Collector Current A J Q 1.50 ICP Pulse 10 _ 1. BASE R 9.50 + 0.20 _ S 8.00 + 0.20 IB Base Current 2 A 2. COLLECTOR (HEAT SINK) T 2.90 MAX 3. EMITTER Ta=25 2 W Collector Power PC Dissipation 65 W Tc=25 TO-220AB Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCEO(SUS) IC=30mA, IB=0 Collector Emitter Sustain

1.16. tip41_41a_41b_41c.pdf Size:180K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP41/41A/41B/41C DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- TIP41; 60V(Min)- TIP41A 80V(Min)- TIP41B; 100V(Min)- TIP41C ·Complement to Type TIP42/42A/42B/42C APPLICATIONS ·Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT TIP41 40 TIP41A 60 VCBO Collector-Base Voltage V TIP41B 80 TIP41C 100 TIP41 40 TIP41A 60 VCEO Collector-Emitter Voltage V TIP41B 80 TIP41C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IBB Base Current 2 A Collector Power Dissipation 65 TC=25? PC W Collector Power Dissipation 2 Ta=25? Tj Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconducto

1.17. tip41d_41e_41f.pdf Size:119K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP41D/41E/41F DESCRIPTION Ў¤ With TO-220C package Ў¤ Complement to type TIP42D/42E/42F APPLICATIONS Ў¤ For medium power linear switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Tc=25Ўж ) SYMBOL VCBO Collector-base voltage PARAMETER TIP41D TIP41E VCEO CHA IN E SEM NG TIP41F TIP41D TIP41E TIP41F Open base Open emitter OND IC CONDITIONS TOR UC VALUE 160 180 200 120 140 160 UNIT V Collector-emitter voltage V VEBO IC ICM IB Emitter-base voltage Collector current (DC) Collector current-Pulse Base current Open collector 5 6 10 3 V A A A TC=25Ўж PC Collector power dissipation Ta=25Ўж Tj Tstg Junction temperature Storage temperature 65 W 2 150 -65~150 Ўж Ўж

1.18. tip41_abc.pdf Size:203K _lge

TIP41/41A/41B/41C TO-220 Transistor (NPN) TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Medium Power Linear Switching Applications MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter TIP41 TIP41A TIP41B TIP41C Units VCBO Collector-Base Voltage 40 60 80 100 V VCEO Collector-Emitter Voltage 40 60 80 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 6 A PC Collector Power Dissipation 2 W TJ Junction Temperature 150 ? Tstg Storage Temperature Range -55to+150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage TIP41 40 TIP41A 60 V(BR)CBO IC= 1mA, IE=0 V TIP41B 80 TIP41C 100 Collector-emitter breakdown voltage TIP41 40 TIP41A 60 V(BR)CEO IC= 30mA, IB=0 V TIP41B 80 TIP41C 100 Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 5 V Collector cut-off curre

1.19. tip41.pdf Size:130K _wietron

TIP41 Series NPN Silicon Power Transistor P b Lead(Pb)-Free COLLECTOR 2 1 BASE 2 FEATURES: 3 1 * Medium Power Linear Switching Applications 1. BASE 2. COLLECTOR 3. EMITTER 3 TO-220 EMITTER MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter TIP41 TIP41A TIP41B TIP41C Units VCBO Collector-Base Voltage 60 V 40 80 100 VCEO Collector-Emitter Voltage 100 V 40 60 80 VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 6 A PC Collector Power Dissipation 2 W TJ Junction Temperature ? 150 Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT TIP41 40 TIP41A 60 V Collector-base breakdown voltage =0 V(BR)CBO IC=1mA, IE 80 TIP41B 100 TIP41C TIP41 40 TIP41A 60 V(BR)CEO Collector-emitter breakdown voltage IC=30mA, IB =0 V TIP41B 80 100 TIP41C Emitter-base breakdown voltage V(BR)EBO 5 IE= 1mA, IC V =0 TIP

See also transistors datasheet: TIP35F , TIP36 , TIP36A , TIP36B , TIP36C , TIP36D , TIP36E , TIP36F , AC188 , TIP41A , TIP41B , TIP41C , TIP41D , TIP41E , TIP41F , TIP42 , TIP42A .

Keywords