TIP41C Transistor Datasheet. Parameters and Characteristics.

Type Designator: TIP41C

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 65

Maximum collector-base voltage |Ucb|, V: 140

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 6

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of TIP41C transistor: TO220

TIP41C Equivalent Transistors - Cross-Reference Search

TIP41C PDF document for downloads:

1.1. tip41c_tip42c.pdf Size:275K _st2

TIP41C TIP42C Complementary power transistors . Features ¦ Complementary PNP-NPN devices ¦ New enhanced series ¦ High switching speed ¦ hFE grouping ¦ hFE improved linearity 3 2 1 Applications TO-220 ¦ General purpose circuits ¦ Audio amplifier Figure 1. Internal schematic diagram ¦ Power linear and switching Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching applications. The complementary PNP type is TIP42C Table 1. Device summary Order code Marking Package Packaging TIP41C R TIP41C (Note 1 on page 4) TIP41C O TO-220 Tube TIP41C Y TIP42C R TIP42C (Note 1 on page 4) TIP42C O TO-220 Tube TIP42C Y November 2007 Rev 2 1/12 www.st.com 12 Contents TIP41C - TIP42C Contents 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . .

1.2. tip41_tip41a_tip41b_tip41c.pdf Size:527K _fairchild_semi

1.3. tip41_tip41a_tip41b_tip41c_to-220.pdf Size:248K _mcc

MCC Micro Commercial Components TM TIP41/41A/41B/41C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Silicon NPN • The complementary PNP types are the TIP42 respectively • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 Power Transistors • Marking : Part Number Absolute Maximum Ratings @ Ta = 25? (unless otherwise noted) Symbol Parameter Value Unit TO-220 VCBO 40 TIP41 B C Collector-base voltage 60 V TIP41A (Open emitter) 80 S F TIP41B 100 TIP41C VCEO Q 40 TIP41 T Collector-emitter voltage 60 V TIP41A (Open base) 80 TIP41B A 100 TIP41C U VEBO Emitter-base Voltage (Open collector) 5 V IC Collector Current 6 A 1 2 3 ICM Collector Current Pulse 10 A H IB Base Current 2 A Total Device Dissipation(Ta=25?) 2

1.4. tip41_tip41a_tip41b_tip41c_tip42_tip42a_tip42b_tip42c.pdf Size:93K _onsemi

TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. 6 AMPERE Features COMPLEMENTARY SILICON • ESD Ratings: Machine Model, C; > 400 V POWER TRANSISTORS Human Body Model, 3B; > 8000 V 40-60-80-100 VOLTS, • Epoxy Meets UL 94 V-0 @ 0.125 in 65 WATTS • Pb-Free Packages are Available* MAXIMUM RATINGS MARKING DIAGRAM Rating Symbol Value Unit Collector-Emitter Voltage TIP41, TIP42 VCEO 40 Vdc 4 TIP41A, TIP42A 60 TIP41B, TIP42B 80 TIP41C, TIP42C 100 Collector-Base Voltage TIP41, TIP42 VCB 40 Vdc TO-220AB TIP4xxG TIP41A, TIP42A 60 CASE 221A AYWW TIP41B, TIP42B 80 STYLE 1 TIP41C, TIP42C 100 1 2 3 Emitter-Base Voltage VEB 5.0 Vdc Collector Current- Continuous IC 6.0 Adc Peak 10 TIP4xx = Device Code Base Current IB 2.0 Adc xx = 1, 1A, 1B, 1C Total Power Dissipation @ TC = 25°C PD 65 W 2, 2A, 2B, 2C

1.5. tip41c.pdf Size:88K _utc

UTC TIP41C NPN EPITAXIAL PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP41C is a NPN expitaxial planar transistor, designed for using in general purpose amplifier and switching applications. 1 FEATURE *Complement to tip42C TO-220 1:BASE 2:COLLECTOR 3:EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Collector Base Voltage VCBO 100 V Collector to Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Collector Current(DC) Ic 6 A Collector Current(Pulse) Ic 10 A Base Current IB 2 A Collector Dissipation(Tc=25°C) Pc 65 W Collector Dissipation(Ta=25°C) Pc 2 W Junction Temperature Tj 150 °C Storage Temperature Tstg -65 ~ +150 °C ELECTRICAL CHARACTERISTICS(Tc=25°C) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Emitter Sustaining voltage(*) BVCEO IC=30mA,IB=0 100 V Collector cutoff Current ICEO VCE=60V,IB=0 0.7 mA Collector Cutoff Current ICES VCE=100V,VEB=0 400 µA Emitter Cutoff current IEBO VBE=5V,Ic=0 1 mA

1.6. tip41cf.pdf Size:436K _kec

SEMICONDUCTOR TIP41CF TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Complementary to TIP42CF. _ A 10.0 + 0.3 _ + B 15.0 0.3 E C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E ?3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + MAXIMUM RATING (Ta=25 ) H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L CHARACTERISTIC SYMBOL RATING UNIT R K _ 3.7 0.2 + L 1.2+0.25/-0.1 M VCBO Collector-Base Voltage 100 V 1.5+0.25/-0.1 M D D _ N 2.54 0.1 + VCEO Collector-Emitter Voltage 100 V _ P 6.8 0.1 + _ Q 4.5 0.2 + VEBO Emitter-Base Voltage 5 V _ + R 2.6 0.2 N N H S 0.5 Typ IC DC 6 Collector Current A ICP Pulse 10 1. BASE 1 2 3 IB Base Current 2 A 2. COLLECTOR 2 W Ta=25 3. EMITTER Collector Power PC Dissipation 25 W Tc=25 TO-220IS Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCEO(SUS

1.7. tip41c.pdf Size:67K _kec

SEMICONDUCTOR TIP41C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A R FEATURES S Complementary to TIP42C. P D DIM MILLIMETERS A 10.30 MAX B 15.30 MAX C 0.80 MAXIMUM RATING (Ta=25 ) _ + D ?3.60 0.20 T E 3.00 CHARACTERISTIC SYMBOL RATING UNIT F 6.70 MAX _ G 13.60 + 0.50 VCBO L Collector-Base Voltage 100 V H 5.60 MAX C C J 1.37 MAX VCEO Collector-Emitter Voltage 100 V K 0.50 L 1.50 MAX M M VEBO Emitter-Base Voltage 5 V M 2.54 K N 4.70 MAX IC DC 6 O 2.60 1 2 3 P 1.50 MAX Collector Current A J Q 1.50 ICP Pulse 10 _ 1. BASE R 9.50 + 0.20 _ S 8.00 + 0.20 IB Base Current 2 A 2. COLLECTOR (HEAT SINK) T 2.90 MAX 3. EMITTER Ta=25 2 W Collector Power PC Dissipation 65 W Tc=25 TO-220AB Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCEO(SUS) IC=30mA, IB=0 Collector Emitter Sustain

See also transistors datasheet: TIP36B , TIP36C , TIP36D , TIP36E , TIP36F , TIP41 , TIP41A , TIP41B , 2SC114 , TIP41D , TIP41E , TIP41F , TIP42 , TIP42A , TIP42B , TIP42C , TIP42D .

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