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TIP41C
  TIP41C
  TIP41C
 
TIP41C
  TIP41C
  TIP41C
 
TIP41C
  TIP41C
 
 
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SCE309 .. SFT288
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ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
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TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
TIP41C All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

TIP41C Transistor Datasheet. Parameters and Characteristics.

Type Designator: TIP41C

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 65

Maximum collector-base voltage |Ucb|, V: 140

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 6

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of TIP41C transistor: TO220

TIP41C Equivalent Transistors - Cross-Reference Search

TIP41C PDF doc:

1.1. tip41c_tip42c.pdf Size:275K _st2

TIP41C
TIP41C
TIP41C TIP42C Complementary power transistors . Features Complementary PNP-NPN devices New enhanced series High switching speed hFE grouping hFE improved linearity 3 2 1 Applications TO-220 General purpose circuits Audio amplifier Figure 1. Internal schematic diagram Power linear and switching Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching applications. The complementary PNP type is TIP42C Table 1. Device summary Order code Marking Package Packaging TIP41C R TIP41C (Note 1 on page 4) TIP41C O TO-220 Tube TIP41C Y TIP42C R TIP42C (Note 1 on page 4) TIP42C O TO-220 Tube TIP42C Y November 2007 Rev 2 1/12 www.st.com 12 Contents TIP41C - TIP42C Contents 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . .

1.2. tip41_tip41a_tip41b_tip41c.pdf Size:527K _fairchild_semi

TIP41C
TIP41C

1.3. tip41_tip41a_tip41b_tip41c_to-220.pdf Size:248K _mcc

TIP41C
TIP41C
MCC Micro Commercial Components TM TIP41/41A/41B/41C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Silicon NPN The complementary PNP types are the TIP42 respectively Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Power Transistors Marking : Part Number Absolute Maximum Ratings @ Ta = 25? (unless otherwise noted) Symbol Parameter Value Unit TO-220 VCBO 40 TIP41 B C Collector-base voltage 60 V TIP41A (Open emitter) 80 S F TIP41B 100 TIP41C VCEO Q 40 TIP41 T Collector-emitter voltage 60 V TIP41A (Open base) 80 TIP41B A 100 TIP41C U VEBO Emitter-base Voltage (Open collector) 5 V IC Collector Current 6 A 1 2 3 ICM Collector Current Pulse 10 A H IB Base Current 2 A Total Device Dissipation(Ta=25?) 2

1.4. tip41_tip41a_tip41b_tip41c_tip42_tip42a_tip42b_tip42c.pdf Size:93K _onsemi

TIP41C
TIP41C
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. 6 AMPERE Features COMPLEMENTARY SILICON ESD Ratings: Machine Model, C; > 400 V POWER TRANSISTORS Human Body Model, 3B; > 8000 V 40-60-80-100 VOLTS, Epoxy Meets UL 94 V-0 @ 0.125 in 65 WATTS Pb-Free Packages are Available* MAXIMUM RATINGS MARKING DIAGRAM Rating Symbol Value Unit Collector-Emitter Voltage TIP41, TIP42 VCEO 40 Vdc 4 TIP41A, TIP42A 60 TIP41B, TIP42B 80 TIP41C, TIP42C 100 Collector-Base Voltage TIP41, TIP42 VCB 40 Vdc TO-220AB TIP4xxG TIP41A, TIP42A 60 CASE 221A AYWW TIP41B, TIP42B 80 STYLE 1 TIP41C, TIP42C 100 1 2 3 Emitter-Base Voltage VEB 5.0 Vdc Collector Current- Continuous IC 6.0 Adc Peak 10 TIP4xx = Device Code Base Current IB 2.0 Adc xx = 1, 1A, 1B, 1C Total Power Dissipation @ TC = 25C PD 65 W 2, 2A, 2B, 2C

1.5. tip41c.pdf Size:215K _utc

TIP41C
TIP41C
UNISONIC TECHNOLOGIES CO., LTD TIP41C NPN PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR ? DESCRIPTION The UTC TIP41C is a NPN expitaxial planar transistor, designed for using in general purpose amplifier and switching applications. ? FEATURE * Complement to TIP42C ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 TIP41CL-x-TA3-T TIP41CG-x-TA3-T TO-220 B C E Tube TIP41CL-x-TF3-T TIP41CG-x-TF3-T TO-220F B C E Tube TIP41CL-x-TN3-T TIP41CG-x-TN3-T TO-252 B C E Tube TIP41CL-x-TN3-R TIP41CG-x-TN3-R TO-252 B C E Tape Reel www.unisonic.com.tw 1 of 4 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R203-008.G TIP41C NPN PLANAR TRANSISTOR ? MARKING INFORMATION PACKAGE MARKING TO-220/TO-220F TO-252 UNISONIC TECHNOLOGIES CO., LTD 2 of 4 www.unisonic.com.tw QW-R203-008.G TIP41C NPN PLANAR TRANSISTOR ? ABSOLUTE MAXIMUM RATINGS (TC=25?C, unless otherwise specified) PARAMETER SYMBOL RATING

1.6. tip41c.pdf Size:67K _kec

TIP41C
TIP41C
SEMICONDUCTOR TIP41C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A R FEATURES S Complementary to TIP42C. P D DIM MILLIMETERS A 10.30 MAX B 15.30 MAX C 0.80 MAXIMUM RATING (Ta=25 ) _ + D ?3.60 0.20 T E 3.00 CHARACTERISTIC SYMBOL RATING UNIT F 6.70 MAX _ G 13.60 + 0.50 VCBO L Collector-Base Voltage 100 V H 5.60 MAX C C J 1.37 MAX VCEO Collector-Emitter Voltage 100 V K 0.50 L 1.50 MAX M M VEBO Emitter-Base Voltage 5 V M 2.54 K N 4.70 MAX IC DC 6 O 2.60 1 2 3 P 1.50 MAX Collector Current A J Q 1.50 ICP Pulse 10 _ 1. BASE R 9.50 + 0.20 _ S 8.00 + 0.20 IB Base Current 2 A 2. COLLECTOR (HEAT SINK) T 2.90 MAX 3. EMITTER Ta=25 2 W Collector Power PC Dissipation 65 W Tc=25 TO-220AB Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCEO(SUS) IC=30mA, IB=0 Collector Emitter Sustain

1.7. tip41cf.pdf Size:436K _kec

TIP41C
TIP41C
SEMICONDUCTOR TIP41CF TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Complementary to TIP42CF. _ A 10.0 + 0.3 _ + B 15.0 0.3 E C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E ?3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + MAXIMUM RATING (Ta=25 ) H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L CHARACTERISTIC SYMBOL RATING UNIT R K _ 3.7 0.2 + L 1.2+0.25/-0.1 M VCBO Collector-Base Voltage 100 V 1.5+0.25/-0.1 M D D _ N 2.54 0.1 + VCEO Collector-Emitter Voltage 100 V _ P 6.8 0.1 + _ Q 4.5 0.2 + VEBO Emitter-Base Voltage 5 V _ + R 2.6 0.2 N N H S 0.5 Typ IC DC 6 Collector Current A ICP Pulse 10 1. BASE 1 2 3 IB Base Current 2 A 2. COLLECTOR 2 W Ta=25 3. EMITTER Collector Power PC Dissipation 25 W Tc=25 TO-220IS Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCEO(SUS

1.8. htip41c.pdf Size:42K _hsmc

TIP41C
TIP41C
Spec. No. : HE6707 HI-SINCERITY Issued Date : 1993.01.13 Revised Date : 2004.11.19 MICROELECTRONICS CORP. Page No. : 1/4 HTIP41C NPN EPITAXIAL PLANAR TRANSISTOR Description The HTIP41C is designed for use in general purpose amplifier and switching applications. TO-220 Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TC=25°C) .................................................................................................................... 65 W Total Power Dissipation (TA=25°C) .....................................................................................................................

1.9. tip41c.pdf Size:204K _semtech

TIP41C
TIP41C
TIP41C NPN Silicon Epitaxial Planar Transistor for power switching and amplifier applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 100 V Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 5 V Emitter Base Voltage VEBO 6 A Collector Current IC 10 A Collector Current (Pulse) ICP 2 A Base Current IB O 2 W Power Dissipation (Ta = 25 C) Ptot O Power Dissipation (Tc = 25 C) Ptot 65 W O Junction Temperature Tj 150 C O Storage Temperature Range Tstg - 65 to + 150 C O Characteristics at Ta = 25 C Parameter Symbol Min. Max. Unit DC Current Gain at VCE = 4 V, IC = 0.3 A hFE 30 - - at VCE = 4 V, IC = 3 A hFE 15 75 - Collector Emitter Cutoff Current ICES - 0.4 mA at VCE = 100 V Collector Emitter Cutoff Current ICEO - 0.7 mA at VCE = 60 V Emitter Base Cutoff Current IEBO - 1 mA at VEB = 5 V Collector Emitter Breakdown Voltage V(BR)CEO 100 - V at IC = 30 mA Co

See also transistors datasheet: TIP36B , TIP36C , TIP36D , TIP36E , TIP36F , TIP41 , TIP41A , TIP41B , 2N4403 , TIP41D , TIP41E , TIP41F , TIP42 , TIP42A , TIP42B , TIP42C , TIP42D .

Keywords

 TIP41C Datasheet  TIP41C Datenblatt  TIP41C RoHS  TIP41C Distributor
 TIP41C Application Notes  TIP41C Component  TIP41C Circuit  TIP41C Schematic
 TIP41C Equivalent  TIP41C Cross Reference  TIP41C Data Sheet  TIP41C Fiche Technique

 

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