TIP513 Transistor Datasheet. Parameters and Characteristics.

Type Designator: TIP513

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 30

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 150

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 5

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of TIP513 transistor: TO59

TIP513 Equivalent Transistors - Cross-Reference Search

TIP513 PDF document for downloads:

5.1. tip51_tip52_tip53_tip54.pdf Size:127K _mospec

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5.2. tip51.pdf Size:222K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP51 DESCRIPTION ·DC Current Gain -hFE = 30~150@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) APPLICATIONS ·Designed for line operated audio output amplifier,and switching power supply drivers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3.0 A ICM Collector Current-Peak 5.0 A IBB Base Current 0.6 A Collector Power Dissipation PD TC=25? 100 W Tj Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.25 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP51 ELECTRICAL CHARACTERI

5.3. tip514.pdf Size:282K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor TIP514 DESCRIPTION ·Continuous Collector Current-IC= -5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Collector Power Dissipation- : PC= 20W @TC? 100? APPLICATIONS ·Designed for power amplifier and high speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -7.5 A IBB Base Current-Continuous -2 A Collector Power Dissipation 2 @Ta= 25? PC W Collector Power Dissipation 20 @TC?100? TJ Junction Temperature 200 ? Storage Temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 5.0 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn  INCHANGE Semiconductor isc Product

See also transistors datasheet: TIP506 , TIP507 , TIP508 , TIP509 , TIP51 , TIP510 , TIP511 , TIP512 , BC147 , TIP514 , TIP515 , TIP516 , TIP517 , TIP518 , TIP519 , TIP52 , TIP520 .

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