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TIP538 Transistor Datasheet. Parameters and Characteristics.

Type Designator: TIP538

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 220

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 200

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 15

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of TIP538 transistor: TO3

TIP538 Equivalent Transistors - Cross-Reference Search

TIP538 PDF doc:

5.1. tip51_tip52_tip53_tip54.pdf Size:127K _mospec

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5.2. tip53.pdf Size:223K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP53 DESCRIPTION ·DC Current Gain -hFE = 30~150@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) APPLICATIONS ·Designed for line operated audio output amplifier,and switching power supply drivers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3.0 A ICM Collector Current-Peak 5.0 A IBB Base Current 0.6 A Collector Power Dissipation PD TC=25? 100 W Tj Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.25 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP53 ELECTRICAL CHARACTERI

See also transistors datasheet: TIP530 , TIP531 , TIP532 , TIP533 , TIP534 , TIP535 , TIP536 , TIP537 , SS8050 , TIP539 , TIP54 , TIP541 , TIP542 , TIP543 , TIP5433 , TIP544 , TIP545 .

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