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2N5306
  2N5306
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2N5306
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2N5306
  2N5306
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
2N5306 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N5306 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N5306

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.4

Maximum collector-base voltage |Ucb|, V: 25

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 12

Maximum collector current |Ic max|, A: 0.3

Maksimalna temperatura (Tj), °C: 125

Transition frequency (ft), MHz: 60

Collector capacitance (Cc), pF: 10

Forward current transfer ratio (hFE), min: 7000

Noise Figure, dB: -

Package of 2N5306 transistor: TO98-3

2N5306 Equivalent Transistors - Cross-Reference Search

2N5306 PDF doc:

1.1. 2n5306.pdf Size:56K _fairchild_semi

2N5306
2N5306
2N5306 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from process 05. See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings * TA=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 25 V VEBO Emitter-Base Voltage 12 V IC Collector Current - Continuous 1.2 A TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units Off

5.1. 2n5301_2n5302_2n5303.pdf Size:251K _motorola

2N5306
2N5306
Order this document MOTOROLA by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N5301 2N5302 High-Power NPN Silicon 2N5303 Transistors . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE High CollectorEmitter Sustaining Voltage POWER TRANSISTORS VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303) NPN SILICON Low CollectorEmitter Saturation Voltage 406080 VOLTS VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc (2N5301, 2N5302) 200 WATTS VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc (2N5303) Excellent Safe Operating Area 200 Watt dc Power Rating to 30 Vdc (2N5303) IIIIIIIIIIIIIIIIIIIIIII Complements to PNP 2N4398, 2N4399 and 2N5745 IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III III IIII IIII III *MAXIMUM RATINGS IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III III IIIIIIIIIII III III IIII IIII III Rating IIII IIII III Symbol 2N5301 2N5302 2N5303 Unit IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III III IIIIIIIIIII III III IIIIIIIIIII III

5.2. 2n5307.pdf Size:57K _fairchild_semi

2N5306
2N5306
2N5307 NPN General Purpose Amplifier This device designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from Process 05. See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 12 V IC Collector Current - Continuous 1.2 A TJ, TST Operating and Storage Junction Temperature Range -55 ~ +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 2002 Fairchild Semiconductor Corporation Rev. B, July 2002 2N5307 Electrical C

5.3. 2n5308.pdf Size:56K _fairchild_semi

2N5306
2N5306
2N5308 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from process 05. See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings * TA=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 12 V IC Collector Current - Continuous 1.2 A TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units Off

5.4. 2n5303.pdf Size:95K _central

2N5306
2N5306
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com

5.5. 2n5302.pdf Size:92K _onsemi

2N5306
2N5306
2N5302 High-Power NPN Silicon Transistor High-power NPN silicon transistors are for use in power amplifier and switching circuits applications. Features http://onsemi.com Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc 30 AMPERES Pb-Free Package is Available* POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS (Note 1) (TJ = 25C unless otherwise noted) IIIIIIIIIIIIIIIIIII 60 VOLTS, 200 WATTS Rating Symbol Value Unit IIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIII III Collector-Emitter Voltage VCEO 60 Vdc IIIIIIIIIII IIII IIIIIIIIIII IIII IIII III IIII III Collector-Base Voltage VCB 60 Vdc IIIIIIIIIII IIII IIIIIIIIIII IIII IIII III IIII III Collector Current - Continuous (Note 2) IC 30 Adc IIIIIIIIIII IIII IIIIIIIIIII IIII IIII III IIII III IIIIIIIIIII IIII IIII III Base Current IB 7.5 Adc IIIIIIIIIII IIII IIIIIIIIIII IIII IIII III IIII III Total Device Dissipation @ TC = 25_C PD 200 W IIIIIIIIIII IIII IIII III Dera

5.6. 2n5301-03.pdf Size:178K _mospec

2N5306
2N5306
A A A A

5.7. 2n5305.pdf Size:126K _no

2N5306
2N5306

5.8. 2n5301_2n5302_2n5303.pdf Size:119K _inchange_semiconductor

2N5306
2N5306
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type 2N4398/4399/5745 Ў¤ Low collector/saturation voltage Ў¤ Excellent safe operating area APPLICATIONS Ў¤ For use in power amplifier and switching circuits applications. PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N5301 2N5302 2N5303 Fig.1 simplified outline (TO-3) and symbol Collector Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO PARAMETER CONDITIONS 2N5301 2N5302 2N5303 Collector-base voltage VCEO Collector-emitter voltage INC NG S HA 2N5301 2N5302 2N5303 2N5303 OND MIC E Open emitter Open base Open collector TOR UC VALUE 40 60 80 40 60 80 5 30 UNIT V V VEBO IC IB PD Tj Tstg Emitter-base voltage 2N5301/5302 Collector current V A 20 7.5 TC=25Ўж 200 200 -65~200 Ўж Ўж A W Base current Total power dissipation Junction temperature Storage temperature THERMAL CHA

5.9. 2n5301.pdf Size:38K _inchange_semiconductor

2N5306
2N5306
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5301 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.75V(Max.)@ IC= 10A ·Wide Area of Safe Operation ·Complement to Type 2N4398 APPLICATIONS ·Designed for use in power amplifier and switching circuits applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 30 A C I Base Current-Continuous 7.5 A B P Collector Power Dissipation@T =25? 200 W C C TJ Junction Temperature 200 ? Tstg Storage Temperature -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance,Junction to Ambient 34 ?/W Rth j-c Thermal Resistance,Junction to Case 0.875 ?/W isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5301

See also transistors datasheet: 2N5298 , 2N53 , 2N530 , 2N5301 , 2N5302 , 2N5303 , 2N5304 , 2N5305 , BC547B , 2N5306A , 2N5307 , 2N5308 , 2N5308A , 2N5309 , 2N531 , 2N5310 , 2N5311 .

Keywords

 2N5306 Datasheet  2N5306 Datenblatt  2N5306 RoHS  2N5306 Distributor
 2N5306 Application Notes  2N5306 Component  2N5306 Circuit  2N5306 Schematic
 2N5306 Equivalent  2N5306 Cross Reference  2N5306 Data Sheet  2N5306 Fiche Technique

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