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2N5306 Transistor (IC) Datasheet. Cross Reference Search. 2N5306 Equivalent

Type Designator: 2N5306

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.4

Maximum collector-base voltage |Ucb|, V: 25

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 12

Maximum collector current |Ic max|, A: 0.3

Maksimalna temperatura (Tj), Ā°C: 125

Transition frequency (ft), MHz: 60

Collector capacitance (Cc), pF: 10

Forward current transfer ratio (hFE), min: 7000

Noise Figure, dB: -

Package of 2N5306 transistor: TO98-3

2N5306 Transistor Equivalent Substitute - Cross-Reference Search

2N5306 PDF:

1.1. 2n5306.pdf Size:56K _fairchild_semi

2N5306
2N5306

2N5306 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings * TA=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage

5.1. 2n5301_2n5302_2n5303.pdf Size:251K _motorola

2N5306
2N5306

Order this document MOTOROLA by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N5301 2N5302 High-Power NPN Silicon 2N5303 Transistors . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE • High Collector–Emitter Sustaining Voltage — POWER TRANSISTORS VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303) NPN SILICON • Low Collector–Emitter Saturation Voltage —

5.2. 2n5308.pdf Size:56K _fairchild_semi

2N5306
2N5306

2N5308 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings * TA=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage

5.3. 2n5307.pdf Size:57K _fairchild_semi

2N5306
2N5306

2N5307 NPN General Purpose Amplifier • This device designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from Process 05. • See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltag

5.4. 2n5303.pdf Size:95K _central

2N5306
2N5306

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com

5.5. 2n5302.pdf Size:92K _onsemi

2N5306
2N5306

2N5302 High-Power NPN Silicon Transistor High-power NPN silicon transistors are for use in power amplifier and switching circuits applications. Features http://onsemi.com • Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc 30 AMPERES • Pb-Free Package is Available* POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS (Note 1) (TJ = 25°C unless otherwise noted)

5.6. 2n5301-03.pdf Size:178K _mospec

2N5306
2N5306

A A A A

5.7. 2n5305.pdf Size:126K _no

2N5306
2N5306

5.8. 2n5301.pdf Size:38K _inchange_semiconductor

2N5306
2N5306

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5301 DESCRIPTION Ā·Low Collector Saturation Voltage- : VCE(sat)= 0.75V(Max.)@ IC= 10A Ā·Wide Area of Safe Operation Ā·Complement to Type 2N4398 APPLICATIONS Ā·Designed for use in power amplifier and switching circuits applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNI

5.9. 2n5301_2n5302_2n5303.pdf Size:119K _inchange_semiconductor

2N5306
2N5306

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ŠˇĀ¤ With TO-3 package ŠˇĀ¤ Complement to type 2N4398/4399/5745 ŠˇĀ¤ Low collector/saturation voltage ŠˇĀ¤ Excellent safe operating area APPLICATIONS ŠˇĀ¤ For use in power amplifier and switching circuits applications. PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N5301 2N5302 2N5303 Fig.1 simplified

See also transistors datasheet: 2N5298 , 2N53 , 2N530 , 2N5301 , 2N5302 , 2N5303 , 2N5304 , 2N5305 , BC547B , 2N5306A , 2N5307 , 2N5308 , 2N5308A , 2N5309 , 2N531 , 2N5310 , 2N5311 .

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