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2N5306
  2N5306
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2N5306
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2N5306
  2N5306
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU214
BU215 .. BUF410AI
BUF410FI .. BUS22BF
BUS22C .. BUW81A
BUW84 .. BUY83
BUY84 .. CD9013J
CD9014 .. CIL157
CIL157A .. CL166A
CL166B .. CPS2540B
CPS2545B .. CSA968
CSA968A .. CSC2688BPL
CSC2688G .. CTP1108
CTP1109 .. D29J6
D29J7 .. D42CU5
D42CU6 .. D64VP4
D64VP5 .. DT400-300
DT400-400 .. DTC015EM
DTC015EUB .. DTL3501
DTL3502 .. ECG2332
ECG2334 .. ED1602C
ED1602D .. ET206
ET359 .. FE4021
FE4022 .. FMG12
FMG13 .. FPC644
FPC828 .. FXT555SM
FXT557 .. GE55821
GE56551 .. GET3
GET3013 .. GSDS50018
GSDS50020 .. GT43
GT44 .. HEPS3035
HEPS3047 .. HSE131
HSE133 .. IMX2
IMX3 .. K2107
K2107A .. KRA161F
KRA163F .. KRC117
KRC117M .. KRC868E
KRC868U .. KSB772-R
KSB772-Y .. KSC5020-R
KSC5020-Y .. KSE13004
KSE13005 .. KT210B
KT210V .. KT347B
KT347V .. KT644G
KT644V .. KT817G9
KT817V .. KT916B
KT918A .. KTC3103A1
KTC3103B1 .. KTX311T
KTX312T .. MD1131F
MD1132 .. MJ14002
MJ14003 .. MJE13003HT
MJE13003HV .. MJF18008
MJF2955 .. MMBT1015
MMBT123S .. MMBTA56L
MMBTA56LT1 .. MP1550A
MP1551 .. MP800
MP801 .. MPS3866
MPS3900 .. MPSW55
MPSW56 .. MT3002
MT3011 .. NA21ZX
NA21ZY .. NB021FZ
NB021H .. NB213YY
NB213Z .. NKT242L
NKT243 .. NR431DF
NR431DG .. NTE2542
NTE2543 .. P217A
P217B .. PDTA114YT
PDTA114YU .. PMD1702K
PMD1703K .. PTB20030
PTB20031 .. RCA8766D
RCA8766E .. RN1908FE
RN1908FS .. RN2962FE
RN2962FS .. S629T
S630T .. SE8520
SE8521 .. SM3174
SM3176 .. SRC1206UF
SRC1207 .. STD826
STD830CP40 .. T1344
T1346 .. TBF869
TBF870 .. TIP32F
TIP33 .. TIX620
TIX621 .. TN5143
TN5172 .. TR21
TR236 .. UN1224
UN1518 .. UPT211
UPT212 .. ZTX107CL
ZTX107CM .. ZTX549
ZTX550 .. ZXTPS720MC
 
2N5306 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N5306 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N5306

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.4

Maximum collector-base voltage |Ucb|, V: 25

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 12

Maximum collector current |Ic max|, A: 0.3

Maksimalna temperatura (Tj), °C: 125

Transition frequency (ft), MHz: 60

Collector capacitance (Cc), pF: 10

Forward current transfer ratio (hFE), min: 7000

Noise Figure, dB: -

Package of 2N5306 transistor: TO98-3

2N5306 Equivalent Transistors - Cross-Reference Search

2N5306 PDF doc:

1.1. 2n5306.pdf Size:56K _fairchild_semi

2N5306
2N5306
2N5306 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from process 05. See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings * TA=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 25 V VEBO Emitter-Base Voltage 12 V IC Collector Current - Continuous 1.2 A TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units Off

5.1. 2n5301_2n5302_2n5303.pdf Size:251K _motorola

2N5306
2N5306
Order this document MOTOROLA by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N5301 2N5302 High-Power NPN Silicon 2N5303 Transistors . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE High CollectorEmitter Sustaining Voltage POWER TRANSISTORS VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303) NPN SILICON Low CollectorEmitter Saturation Voltage 406080 VOLTS VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc (2N5301, 2N5302) 200 WATTS VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc (2N5303) Excellent Safe Operating Area 200 Watt dc Power Rating to 30 Vdc (2N5303) IIIIIIIIIIIIIIIIIIIIIII Complements to PNP 2N4398, 2N4399 and 2N5745 IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III III IIII IIII III *MAXIMUM RATINGS IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III III IIIIIIIIIII III III IIII IIII III Rating IIII IIII III Symbol 2N5301 2N5302 2N5303 Unit IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III III IIIIIIIIIII III III IIIIIIIIIII III

5.2. 2n5307.pdf Size:57K _fairchild_semi

2N5306
2N5306
2N5307 NPN General Purpose Amplifier This device designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from Process 05. See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 12 V IC Collector Current - Continuous 1.2 A TJ, TST Operating and Storage Junction Temperature Range -55 ~ +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 2002 Fairchild Semiconductor Corporation Rev. B, July 2002 2N5307 Electrical C

5.3. 2n5308.pdf Size:56K _fairchild_semi

2N5306
2N5306
2N5308 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from process 05. See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings * TA=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 12 V IC Collector Current - Continuous 1.2 A TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units Off

5.4. 2n5303.pdf Size:95K _central

2N5306
2N5306
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com

5.5. 2n5302.pdf Size:92K _onsemi

2N5306
2N5306
2N5302 High-Power NPN Silicon Transistor High-power NPN silicon transistors are for use in power amplifier and switching circuits applications. Features http://onsemi.com Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc 30 AMPERES Pb-Free Package is Available* POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS (Note 1) (TJ = 25C unless otherwise noted) IIIIIIIIIIIIIIIIIII 60 VOLTS, 200 WATTS Rating Symbol Value Unit IIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIII III Collector-Emitter Voltage VCEO 60 Vdc IIIIIIIIIII IIII IIIIIIIIIII IIII IIII III IIII III Collector-Base Voltage VCB 60 Vdc IIIIIIIIIII IIII IIIIIIIIIII IIII IIII III IIII III Collector Current - Continuous (Note 2) IC 30 Adc IIIIIIIIIII IIII IIIIIIIIIII IIII IIII III IIII III IIIIIIIIIII IIII IIII III Base Current IB 7.5 Adc IIIIIIIIIII IIII IIIIIIIIIII IIII IIII III IIII III Total Device Dissipation @ TC = 25_C PD 200 W IIIIIIIIIII IIII IIII III Dera

5.6. 2n5301-03.pdf Size:178K _mospec

2N5306
2N5306
A A A A

5.7. 2n5305.pdf Size:126K _no

2N5306
2N5306

5.8. 2n5301_2n5302_2n5303.pdf Size:119K _inchange_semiconductor

2N5306
2N5306
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type 2N4398/4399/5745 Ў¤ Low collector/saturation voltage Ў¤ Excellent safe operating area APPLICATIONS Ў¤ For use in power amplifier and switching circuits applications. PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N5301 2N5302 2N5303 Fig.1 simplified outline (TO-3) and symbol Collector Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO PARAMETER CONDITIONS 2N5301 2N5302 2N5303 Collector-base voltage VCEO Collector-emitter voltage INC NG S HA 2N5301 2N5302 2N5303 2N5303 OND MIC E Open emitter Open base Open collector TOR UC VALUE 40 60 80 40 60 80 5 30 UNIT V V VEBO IC IB PD Tj Tstg Emitter-base voltage 2N5301/5302 Collector current V A 20 7.5 TC=25Ўж 200 200 -65~200 Ўж Ўж A W Base current Total power dissipation Junction temperature Storage temperature THERMAL CHA

5.9. 2n5301.pdf Size:38K _inchange_semiconductor

2N5306
2N5306
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5301 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.75V(Max.)@ IC= 10A ·Wide Area of Safe Operation ·Complement to Type 2N4398 APPLICATIONS ·Designed for use in power amplifier and switching circuits applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 30 A C I Base Current-Continuous 7.5 A B P Collector Power Dissipation@T =25? 200 W C C TJ Junction Temperature 200 ? Tstg Storage Temperature -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance,Junction to Ambient 34 ?/W Rth j-c Thermal Resistance,Junction to Case 0.875 ?/W isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5301

See also transistors datasheet: 2N5298 , 2N53 , 2N530 , 2N5301 , 2N5302 , 2N5303 , 2N5304 , 2N5305 , BC547B , 2N5306A , 2N5307 , 2N5308 , 2N5308A , 2N5309 , 2N531 , 2N5310 , 2N5311 .

Keywords

 2N5306 Datasheet  2N5306 Datenblatt  2N5306 RoHS  2N5306 Distributor
 2N5306 Application Notes  2N5306 Component  2N5306 Circuit  2N5306 Schematic
 2N5306 Equivalent  2N5306 Cross Reference  2N5306 Data Sheet  2N5306 Fiche Technique

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