UMB1N Transistor Datasheet. Parameters and Characteristics.

Type Designator: UMB1N

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.1

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 140

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 56

Noise Figure, dB: -

Package of UMB1N transistor: SO6

UMB1N Equivalent Transistors - Cross-Reference Search

UMB1N PDF document for downloads:

1.1. umb1n_imb1a_b1_sot363_sot23-6.pdf Size:62K _rohm

UMA1N / UMB1N / UMB5N / FMA1A / IMB1A / IMB5A Transistors General purpose (dual digital transistors) UMA1N / UMB1N / UMB5N / FMA1A / IMB1A / IMB5A External dimensions (Units : mm) Features 1) Two DTA124E chips in a UMT or SMT package. UMA1N 1.25 Absolute maximum ratings (Ta = 25°C) 2.1 Parameter Symbol Limits Unit Supply voltage VCC -50 V 0.1Min. -40 Input voltage VIN V ROHM : UMT5 10 Each lead has same dimensions EIAJ : SC-88A Output current IO -100 mA UMA1N, UMB1N, UMB5N 150(TOTAL) ?1 Power dissipation Pd mW FMA1A, IMB1A, IMB5A 300(TOTAL) ?2 UMB1N, UMB5N Junction temperature Tj 150 °C Storage temperature Tstg -55 ? +150 °C 1 120mW per element must not be exceeded. ? ?2 200mW per element must not be exceeded. 1.25 2.1 Package, marking, and packaging specifications 0.1Min. ROHM : UMT6 Part No. UMA1N UMB1N UMB5N FMA1A IMB1A IMB5A Each lead has same dimensions EIAJ : SC-88 Package UMT5 UMT6 UMT6 SMT5 SMT6 SMT6 Marking A1 B1 B5 A1 B1 B5 Code TR T

See also transistors datasheet: UMA5N , UMA6N , UMA7N , UMA8N , UMA9N , UMB10N , UMB11N , UMB16N , 2N3773 , UMB2N , UMB3N , UMB4N , UMB5N , UMB6N , UMB7N , UMB8N , UMB9N .

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