UMD6N Transistor Datasheet. Parameters and Characteristics.

Type Designator: UMD6N

Material of transistor: Si

Polarity: p*n

Maximum collector power dissipation (Pc), W: 0.1

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 140

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of UMD6N transistor: SO6

UMD6N Equivalent Transistors - Cross-Reference Search

UMD6N PDF document for downloads:

1.1. emd6_umd6n_imd6a.pdf Size:67K _rohm

EMD6 / UMD6N / IMD6A Transistors General purpose (dual digital transistors) EMD6 / UMD6N / IMD6A Features External dimensions (Units : mm) 1) Both the DTA143T chip and DTC143T chip in an EMT EMD6 or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3) (5) (2) automatic mounting machines. (6) (1) 1.2 1.6 3) Transistor elements are independent, eliminating interference. Each lead has same dimensions 4) Mounting cost and area can be cut in half. ROHM : EMT6 Abbreviated symbol : D6 Structure UMD6N A PNP and NPN digital transistor (each with a single built in resistor) 1.25 2.1 The following characteristics apply to both the DTr1 and DTr2, however, the � -� sign on DTr2 values for the PNP 0.1Min. type have been omitted. Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 Abbreviated symbol : D6 Equivalent circuit IMD6A EMD6 / UMD6N IMD6A (4) (5) (6) (3) (2) (1) R1 R1 DTr1 DTr1 DTr2 DTr2 R1=4.7k? R1

1.2. umd6n_imd6a_d6_sot23-6sot363.pdf Size:66K _rohm

Transistors General purpose (dual digital transistors) UMD6N / IMD6A FFeatures FExternal dimensions (Units: mm) 1) Both the DTA143T chip and DTC143T chip in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma- chines. 3) Transistor elements are indepen- dent, eliminating interference. 4) Mounting cost and area can be cut in half. FStructure A PNP and a NPN digital transistor (each with a single built in resistor) The following characteristics apply to both DTr1 and DTr2, however, the ��� sign on DTr2 values for the PNP type have been omitted. FAbsolute maximum ratings (Ta = 25_C) (96-467-AC143T) 532 Transistors UMD6N / IMD6A FElectrical characteristics (Ta = 25_C) FPackaging specifications FElectrical characteristic curves FDTr1 (NPN) 533 Transistors UMD6N / IMD6A DTr2 (PNP) 534

1.3. umd6n.pdf Size:67K _rohm

EMD6 / UMD6N / IMD6A Transistors General purpose (dual digital transistors) EMD6 / UMD6N / IMD6A Features External dimensions (Units : mm) 1) Both the DTA143T chip and DTC143T chip in an EMT EMD6 or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3) (5) (2) automatic mounting machines. (6) (1) 1.2 1.6 3) Transistor elements are independent, eliminating interference. Each lead has same dimensions 4) Mounting cost and area can be cut in half. ROHM : EMT6 Abbreviated symbol : D6 Structure UMD6N A PNP and NPN digital transistor (each with a single built in resistor) 1.25 2.1 The following characteristics apply to both the DTr1 and DTr2, however, the � -� sign on DTr2 values for the PNP 0.1Min. type have been omitted. Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 Abbreviated symbol : D6 Equivalent circuit IMD6A EMD6 / UMD6N IMD6A (4) (5) (6) (3) (2) (1) R1 R1 DTr1 DTr1 DTr2 DTr2 R1=4.7k? R1

1.4. umd6n.pdf Size:124K _secos

UMD6N Dual NPN+PNP Digital Transistors (Built-in Resistors) Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-363 ? DTA143T(PNP) and DTC143T(NPN) transistors are built-in a package. ? Transistor elements are independent, eliminating interference. A ? Mounting cost and area can be cut in half. E L B EQUIVALENT CIRCUIT ?? F C H J D G K Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.00 2.20 G 0.100 REF. B 2.15 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.15 D 0.90 1.10 K 8° E 1.20 1.40 L 0.650 TYP. MARKING:D6 F 0.15 0.35 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Value Unit Collector-base voltage V(BR)CBO 50 V Collector-emitter voltage V(BR)CEO 50 V Emitter-base voltage V(BR)EBO 5 V Collector current IC 100 mA Collector Power dissipation PC 150 mW Junction & Storage temperature TJ, TSTG 150, -55 ~ 150 ? ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERIS

1.5. umd6n.pdf Size:404K _htsemi

UMD6N DIGITAL TRANSISTOR (NPN+ PNP) SOT-363 FEATURES DTA143T(PNP) and DTC143T(NPN) transistors are built-in a package. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. 1 External circuit MARKING:D6 Absolute maximum ratings(Ta=25?) Parameter Symbol Limits Unit Collector-base voltage V(BR)CBO 50 V Collector-emitter voltage V(BR)CEO 50 V Emitter-base voltage V(BR)EBO 5 V Collector current IC 100 mA Collector Power dissipation PC 150 mW Junction temperature Tj 150 ? Storage temperature Tstg -55~150 ? Electrical characteristics (Ta=25?) Parameter Symbol Min. Typ Max. Unit Conditions Collector-base breakdown voltage V(BR)CBO 50 V IC=50?A Collector-emitter breakdown voltage V(BR)CEO 50 V IC=1mA Emitter-base breakdown voltage V(BR)EBO 5 V IE=50?A Collector cut-off current ICBO 0.5 ?A VCB=50V Emitter cut-off current IEBO 0.5 ?A VEB=4V Collector-emitter saturation voltage VCE(sat) 0.3 V IC=

See also transistors datasheet: UMC6N , UMC7N , UMD10N , UMD14N , UMD16N , UMD1N , UMD2N , UMD3N , BF199 , UMD8N , UMD9N , UMG11N , UMG12N , UMG13N , UMG1N , UMG2N , UMG3N .

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