UMZ1N Transistor Datasheet. Parameters and Characteristics.

Type Designator: UMZ1N

Material of transistor: Si

Polarity: p*n

Maximum collector power dissipation (Pc), W: 0.1

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.15

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 140

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 120

Noise Figure, dB: -

Package of UMZ1N transistor: SO6

UMZ1N Equivalent Transistors - Cross-Reference Search

UMZ1N PDF document for downloads:

1.1. umz1n.pdf Size:95K _rohm

EMZ1 / UMZ1N / IMZ1A Transistors General purpose transistor (dual transistors) EMZ1 / UMZ1N / IMZ1A Features External dimensions (Unit : mm) 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMZ1 EMT or UMT or SMT package. (4) (3) 2) Mounting possible with EMT3 or UMT3 or SMT3 (5) (2) (6) (1) 1.2 automatic mounting machines. 1.6 3) Transistor elements are independent, eliminating Each lead has same dimensions interference. 4) Mounting cost and area can be cut in half. ROHM : EMT6 Abbreviated symbol : Z1 UMZ1N Structure NPN / PNP epitaxial planar silicon transistor 1.25 2.1 Equivalent circuit 0.1Min. Each lead has same dimensions EMZ1 / UMZ1N IMZ1A (3) (2) (1) (4) (5) (6) ROHM : UMT6 EIAJ : SC-88 Abbreviated symbol : Z1 Tr1 Tr1 Tr2 Tr2 IMZ1A (4) (5) (6) (3) (2) (1) 1.6 2.8 Absolute maximum ratings (Ta = 25�C) 0.3to0.6 Limits Each lead has same dimensions Parameter Symbol Unit Tr1 Tr2 ROHM : SMT6 EIAJ : SC-74 Collector-

1.2. emz1_umz1n_imz1a.pdf Size:95K _rohm

EMZ1 / UMZ1N / IMZ1A Transistors General purpose transistor (dual transistors) EMZ1 / UMZ1N / IMZ1A Features External dimensions (Unit : mm) 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMZ1 EMT or UMT or SMT package. (4) (3) 2) Mounting possible with EMT3 or UMT3 or SMT3 (5) (2) (6) (1) 1.2 automatic mounting machines. 1.6 3) Transistor elements are independent, eliminating Each lead has same dimensions interference. 4) Mounting cost and area can be cut in half. ROHM : EMT6 Abbreviated symbol : Z1 UMZ1N Structure NPN / PNP epitaxial planar silicon transistor 1.25 2.1 Equivalent circuit 0.1Min. Each lead has same dimensions EMZ1 / UMZ1N IMZ1A (3) (2) (1) (4) (5) (6) ROHM : UMT6 EIAJ : SC-88 Abbreviated symbol : Z1 Tr1 Tr1 Tr2 Tr2 IMZ1A (4) (5) (6) (3) (2) (1) 1.6 2.8 Absolute maximum ratings (Ta = 25�C) 0.3to0.6 Limits Each lead has same dimensions Parameter Symbol Unit Tr1 Tr2 ROHM : SMT6 EIAJ : SC-74 Collector-

1.3. umz1nt1g.pdf Size:99K _onsemi

UMZ1NT1G Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com Features � High Voltage and High Current: VCEO = 50 V, IC = 200 mA (6) (5) (4) � High hFE: hFE = 200X400 � Moisture Sensitivity Level: 1 Q1 Q2 � ESD Rating - Human Body Model: 3A ESD Rating - Machine Model: C � These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS (1) (2) (3) Compliant MAXIMUM RATINGS (TA = 25�C) Rating Symbol Value Unit 1 Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc SC-88 CASE 419B Emitter-Base Voltage V(BR)EBO 7.0 Vdc Collector Current - Continuous IC 200 mAdc THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation PD 187 (Note 1) mW TA = 25�C 256 (Note 2) Derate above 25�C 1.5 (Note 1) mW/�C 3Z M G 2.0 (Note 2) G Thermal Resistance, Junction-to-Ambient RqJA 670 (Note 1) �C/W 490 (Note 2) 1 Characteristic (Both Junctio

1.4. umz1n.pdf Size:1132K _secos

UMZ1N 0.15 W, ±150 mA, ±60 V ± ± ± ± ± ± Silicon Epitaxial Planar Elektronische Bauelemente Power Management (Dual Transistors) RoHS Compliant Product SOT-363 A suffix of “-C” specifies halogen & lead-free A FEATURES E L 2SA1037AK and 2SC2412K are housed independently in a package. Transistor elements independent, eliminating interference. Mounting cost and area can be cut in half. B MARKING AND EQUIVALENT CIRCUIT F C H 6 5 4 3 2 1 J D G K C B E Z1 Millimeter Millimeter REF. REF. TR2 TR1 Min. Max. Min. Max. A 2.00 2.20 G 0.100 REF. 1 2 3 B 2.15 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.15 4 5 6 D 0.90 1.10 K 8° E B C E 1.20 1.40 L 0.650 TYP. F 0.15 0.35 TR1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 7 V Collector Current – Continuous IC 0.15 A Collec

See also transistors datasheet: UMW8N , UMX1N , UMX2N , UMX3N , UMX4N , UMX5N , UMY1N , UMY3N , 2N2219 , UMZ2N , UN1110Q , UN1110R , UN1110S , UN1111 , UN1112 , UN1113 , UN1114 .

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