UN211M Transistor Datasheet. Parameters and Characteristics.

Type Designator: UN211M

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 80

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 80

Noise Figure, dB: -

Package of UN211M transistor: SOT23

UN211M Equivalent Transistors - Cross-Reference Search

UN211M PDF document for downloads:

5.1. mun2111t1rev5.pdf Size:236K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MUN2111T1/D Bias Resistor Transistor MUN2111T1 PNP Silicon Surface Mount Transistor with SERIES Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components PNP SILICON by integrating them into a single device. The use of a BRT can reduce both system BIAS RESISTOR cost and board space. The device is housed in the SC–59 package which is designed TRANSISTOR for low power surface mount applications. • Simplifies Circuit Design • Reduces Board Space PIN3 • Reduces Component Count COLLECTOR (OUTPUT) • The SC–59 package can be soldered using wave or reflow. 3 The modifie

5.2. mmun2111lt1rev0d.pdf Size:188K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMUN2111LT1/D Bias Resistor Transistor MMUN2111LT1 PNP Silicon Surface Mount Transistor with SERIES Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components PNP SILICON by integrating them into a single device. The use of a BRT can reduce both system BIAS RESISTOR cost and board space. The device is housed in the SOT-23 package which is TRANSISTOR designed for low power surface mount applications. • Simplifies Circuit Design PIN 3 • Reduces Board Space COLLECTOR • Reduces Component Count (OUTPUT) 3 • The SOT-23 package can be soldered using wave or R1 reflow.

5.3. mmun2111.pdf Size:267K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMUN2111LT1/D Bias Resistor Transistor MMUN2111LT1 PNP Silicon Surface Mount Transistor with SERIES Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components PNP SILICON by integrating them into a single device. The use of a BRT can reduce both system BIAS RESISTOR cost and board space. The device is housed in the SOT-23 package which is TRANSISTOR designed for low power surface mount applications. • Simplifies Circuit Design PIN 3 • Reduces Board Space COLLECTOR • Reduces Component Count (OUTPUT) 3 • The SOT-23 package can be soldered using wave or R1 reflow.

5.4. mun2111t1-d.pdf Size:111K _onsemi

MUN2111T1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http://onsemi.com device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a PIN 3 monolithic bias network consisting of two resistors; a series base COLLECTOR resistor and a base-emitter resistor. The BRT eliminates these (OUTPUT) individual components by integrating them into a single device. The R1 use of a BRT can reduce both system cost and board space. The device is housed in the SC-59 package which is designed for low power PIN 2 R2 surface mount applications. BASE (INPUT) Features PIN 1 EMITTER • Simplifies Circuit Design (GROUND) • Reduces Board Space • Reduces Component Count 3 • Moisture Sensitivity Level: 1 • ESD Rating - Human Body Model: Class 1 2 - Machine Model: Class B 1 •

5.5. mmun2111lt1.pdf Size:190K _onsemi

MMUN2111LT1G Series Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http://onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter PIN 3 resistor. The BRT eliminates these individual components by COLLECTOR PIN 1 R1 (OUTPUT) integrating them into a single device. The use of a BRT can reduce BASE both system cost and board space. The device is housed in the SOT-23 (INPUT) R2 package which is designed for low power surface mount applications. PIN 2 EMITTER Features (GROUND) • Simplifies Circuit Design • Reduces Board Space 3 MARKING • Reduces Component Count DIAGRAM • The SOT-23 package can be soldered using wave or reflow. The 1 2 modified gull-winged leads absorb ther

5.6. mun2111t1_6a-lsot346.pdf Size:130K _onsemi

MUN2111T1 Series Preferred Device Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http://onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network PIN 3 consisting of two resistors; a series base resistor and a base–emitter COLLECTOR resistor. The BRT eliminates these individual components by (OUTPUT) integrating them into a single device. The use of a BRT can reduce R1 both system cost and board space. The device is housed in the SC–59 package which is designed for low power surface mount applications. PIN 1 R2 BASE (INPUT) • Simplifies Circuit Design PIN 2 • Reduces Board Space EMITTER • Reduces Component Count (GROUND) • The SC–59 package can be soldered using wave or reflow. The modified gull–winged leads absorb thermal stress during MARKI

5.7. mmun2111.pdf Size:199K _wietron

MMUN2111 Series Bias Resistor Transistor COLLECTOR 3 3 PNP Silicon R 1 1 BASE R 2 1 2 2 EMITTER SOT-23 ( T =25 C unless otherwise noted) Maximum Ratings A Rating Symbol Value Unit Collector-Emitter Voltage V 50 CEO Vdc Vdc Collector-Base Voltage VCBO 50 Collector Current-Continuous IC mAdc 100 Thermal Characteristics Max Unit Characteristics Symbol Total Device Dissipation FR-5 Board PD 246 (1) mW (1)TA=25 C 400 (2) Derate above 25 C (1) 1.5 mW/ C 2.0 (2) R ?JA Thermal Resistance, Junction to Ambient 508 C/W 311 TJ,Tstg Junction and Storage, Temperature Range -55 to +150 C 1.FR-4 @ minimum pad 2.FR-4 @ 1.0 1.0 inch Pad Device Marking and Resistor Values Device Marking R1(K) R2(K) Device Marking R1(K) R2(K) 10 MMUN2111 A6A 10 A6G 1.0 1.0 MMUN2130 MMUN2112 A6B 22 22 MMUN2131 A6H 2.2 2.2 MMUN2113 47 47 A6J 4.7 A6C MMUN2132 4.7 10 MMUN2114 A6D 47 A6K 4.7 MMUN2133 47 10 MMUN2115 A6E A6L 22 MMUN2134 47 MMUN2116 4.7 A6F W E I T R

See also transistors datasheet: UN2117R , UN2117S , UN2118 , UN2119 , UN211D , UN211E , UN211F , UN211H , BC547 , UN211N , UN211T , UN211V , UN211Z , UN2121 , UN2122 , UN2123 , UN2124 .

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