UN9117Q
Transistor Datasheet. Parameters and Characteristics. Type Designator: UN9117Q
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.125
Maximum collector-base voltage |Ucb|, V: 50
Maximum collector-emitter voltage |Uce|, V: 50
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 0.1
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 150
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 160
Noise Figure, dB: - Package of UN9117Q
transistor: SP0
UN9117Q
Equivalent Transistors - Cross-Reference Search UN9117Q
PDF document for downloads: PDF unavailable! See also transistors datasheet: UN9113
, UN9114
, UN9115Q
, UN9115R
, UN9115S
, UN9116Q
, UN9116R
, UN9116S
, BC237
, UN9117R
, UN9117S
, UN9118
, UN9119
, UN911AJ
, UN911BJ
, UN911CJ
, UN911D
. Keywords| UN9117Q
Datasheet | UN9117Q
Datenblatt | UN9117Q
RoHS | UN9117Q
Distributor | | UN9117Q
Application Notes | UN9117Q
Component | UN9117Q
Circuit | UN9117Q
Schematic | | UN9117Q
Equivalent | UN9117Q
Cross Reference | UN9117Q
Data Sheet | UN9117Q
Fiche Technique |
|