ZTX109B Transistor Datasheet. Parameters and Characteristics.

Type Designator: ZTX109B

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.3

Maximum collector-base voltage |Ucb|, V: 45

Maximum collector-emitter voltage |Uce|, V: 30

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 125

Transition frequency (ft), MHz: 150

Collector capacitance (Cc), pF: 5

Forward current transfer ratio (hFE), min: 240

Noise Figure, dB: -

Package of ZTX109B transistor: TO226

ZTX109B Equivalent Transistors - Cross-Reference Search

ZTX109B PDF document for downloads:

5.1. ztx1056a.pdf Size:124K _diodes

NPN SILICON PLANAR MEDIUM POWER ZTX1056A HIGH GAIN TRANSISTOR ISSUE 3 – JANUARY 1995 T V V i I i V I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I I Di i i T ° i T T T ° Ii i Ii e d, applied or pply of any ZTX1056A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). T I T IT DITI II V V I µ V I II i V V I µ V I II i V V I V I II i V V V I µ V V V I i V 8 8 V I µ V I II I V V i I V V II i I V V II i V V I I i V I V I I V I I V I I i V V I I i V I i T V 8 V I V V V I i I V V T i I V V I V V I V V I V V I V V T i i T I V V i V V i i Ti I I V V I I ± V V I i i I i µ D I ? ZTX1056A TYPICAL CHARACTERISTICS . 8 8 I I ° ° I I ° I I ° I I V I II I II VCE(sat) v IC VCE(sat) v IC I I V V 8 I II I II V hFE v IC VBE(sat) v Ic i I I T T V V 8

5.2. ztx1049a.pdf Size:82K _diodes

ZTX1049A NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FEATURES • VCEV = 80V • Very low saturation voltages • High gain • 20 amps pulse current APPLICATIONS • LCD backlight converters E-Line • Emergency lighting • DC-DC converters PINOUT SIDE VIEW ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5V Peak Pulse Current ICM 20 A Continuous Collector Current IC 4A Base Current IB 500 mA Power Dissipation at Tamb=25°C Ptot 1W Operating and Storage Temperature Tj:Tstg -55 to +200 °C Range ISSUE 3 - JUNE 2007 SEMICONDUCTORS 1 ZTX1049A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS Collector-Base Breakdown V(BR)CBO 80 120 V IC=100µA Voltage Collector-Emitter VCES 80 120 V IC=100µA Breakdown Voltage Collector-Emitter VCEO 25 30 V IC=10mA Breakdown Voltage Collector-Emitter VCEV 80 120

5.3. ztx1048a.pdf Size:112K _diodes

Si i O A A Di O ZT 0 8A Hi H Ai T A SiSTO iSS A Y T V V V V i V I i i I I TI D Ii i i in D D TO o a i I A SO T A i ATi S T T 8 IT II V I V V II i V I V V i V I V V I I i II I I Di i i T ° i T T T ° Ii i Ii e d, applied or pply of any ZT 0 8A T i A HA A T iSTi S a Ta unI o h i a T 8 T IT DITI I T II V 8 V I µ V I II i V 8 V I µ V I II i V V I V I II i V V 8 V I µ V V V I i V 8 V I µ V I II I V V i I V V II i I V V II i i V V I I V I V I I V I I V I I i V 8 V I I i V I i T V 8 V I V V V I i 8 I V V T i I V V I V V I V V 8 I V V T i i T I V V i 8 V V I I V V i i Ti 8 I I ± V V 8 ZT 0 8A TY i A HA A T iSTi S 8 8 ° I I I I I I I I -55°C +25°C +100°C +175°C I II I II a i a i V V I I 8 I II I II h i a i i I I T T 100 V V 10 8 DC 1s 1 100ms 10ms 1ms 100us 0.1 V V 0.01 10mV 10

5.4. ztx1055a.pdf Size:129K _diodes

NPN SILICON PLANAR MEDIUM POWER ZTX1055A HIGH GAIN TRANSISTOR ISSUE 3 – JANUARY 1995 T V V i I V i V I I TI i i i i i i D i E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I I Di i i T ° i T T T ° Ii i Ii e d, applied or pply of any ZTX1055A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). T I T IT DITI II V 8 V I µ V I II i V 8 V I µ V I II i V V I V I II i V V 8 V I µ V V V I i V 8 8 V I µ V I II I V V i I V V II i I V V II i V V I I i V I V I I V I I i V V I I i V I i T V 8 V I V V V I i I V V T i I V V I V V I V V T i i T I V V i V V i i Ti I I V V I I ± V V I i i I i µ D I ? ZTX1055A . TYPICAL CHARACTERISTICS 8 8 I I ° I I I I I I V I II I II VCE(sat) v IC VCE(sat) v IC I I V V 8 I II I II V hFE v IC VBE(sat) v Ic i I I T T V V V

5.5. ztx1047a.pdf Size:110K _diodes

Si i O A A Di O ZT 0 A Hi H Ai T A SiSTO iSS A A Y T V i V I i i i I TI D D I i i in TO o a i I A SO T A i ATi S T T IT II V I V V II i V I V V i V I V V I I i II I I Di i i T ° i T T T ° Ii i Ii e d, applied or pply of any ZT 0 A T i A HA A T iSTi S a Ta unI o h i a T I T IT DITI II V V I µ V I II i V V I µ V I II i V V I V I II i V V V I µ V V V I i V 8 V I µ V I II I V V i I V V II i I V V II i i V V I I V I V I I 8 V I I V I I i V 8 V I I i V I i T V 8 V I V V V I i 8 I V V T i I V V 8 I V V I V V I V V T i i T I V V i 8 V V I I V V i i Ti 8 I I ± V V I i i I i µ D I ? ZT 0 A TY i A HA A T iSTi S 8 ° I I 8 I I I I -55°C I I +25°C +100°C +175°C I II I II a i a i V V I I 8 I II I II h i a i i I I T T V V 8 DC 1s 100ms V 10ms 1ms 100us V V V V I II V II V I on i Sa O a in A a

5.6. ztx1051a.pdf Size:115K _diodes

NPN SILICON PLANAR MEDIUM POWER ZTX1051A HIGH GAIN TRANSISTOR ISSUE 3 – FEBRUARY 95 T V V V i V I i i I I i I TI i i i i E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I I Di i i T ° i T T T ° Ii i Ii e d, applied or pply of any ZTX1051A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). T I T IT DITI II V V I µ V I II i V V I µ V I II i V V I V I II i V V V I µ V V V I i V 8 8 V I µ V I II I V V i I V V II i I V V II i i V V I I V I V I I V I I i V V I I i V I i T V 8 V I V V V I i I V V T i I V V I V V I V V T i i T I V V i V V I I V V i i Ti I I ± V V I i i I i µ D I ? ZTX1051A TYPICAL CHARACTERISTICS . 8 8 ° I I I I I I -55°C I I +25°C +100°C +175°C I II I II VCE(sat) v IC VCE(sat) v IC V V I I 8 I II I II hFE v IC VBE(sat) v Ic i I I T T

5.7. ztx1053a.pdf Size:136K _diodes

NPN SILICON PLANAR MEDIUM POWER ZTX1053A HIGH GAIN TRANSISTOR ISSUE 3– JANUARY 1995 T V V i I V i V I I TI i i i i i D D E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T T IT II V I V V II i V I V V i V I V V I I i II I I Di i i T ° i T T T ° Ii i Ii e d, applied or pply of any ZTX1053A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). T I T IT DITI II V V I µ V I II i V V I µ V I II i V V I V I II i V V V I µ V V V I i V 8 8 V I µ V I II I V V i I V V II i I V V II i i V V I I V I V I I 8 V I I i V V I I i V I i T V 8 V I V V V I i I V V T i I V V I V V I V V T i i T I V V i V V I I V V i i Ti I I ± V V I i i I i µ D I ? ZTX1053A TYPICAL CHARACTERISTICS . 8 8 ° I I -55°C +25°C I I +100°C I I +175°C I I I II I II VCE(sat) v IC VCE(sat) v IC I I V V 8 I II I II hFE v IC VBE(sat) v Ic i I

See also transistors datasheet: ZTX108BM , ZTX108CK , ZTX108CL , ZTX108CM , ZTX108K , ZTX108L , ZTX108M , ZTX109 , 2SC1815 , ZTX109BK , ZTX109BL , ZTX109BM , ZTX109C , ZTX109CK , ZTX109CL , ZTX109CM , ZTX109K .

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