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ZTX510L Transistor Datasheet. Parameters and Characteristics.

Type Designator: ZTX510L

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.3

Maximum collector-base voltage |Ucb|, V: 12

Maximum collector-emitter voltage |Uce|, V: 12

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 0.2

Maximum junction temperature (Tj), °C: 125

Transition frequency (ft), MHz: 400

Collector capacitance (Cc), pF: 6

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of ZTX510L transistor: TO226

ZTX510L Equivalent Transistors - Cross-Reference Search

ZTX510L PDF doc:

4.1. ztx510.pdf Size:51K _diodes

PNP SILICON PLANAR HIGH SPEED 0 ZTX510 SWITCHING TRANSISTOR ISSUE 2 – MARCH 94 T V I V T mA E-Line mA TO92 Compatible 5mA ABSOLUTE MAXIMUM RATINGS. T V IT -4 -5 II V I V V II i V I V V i V I V V I i II I Di i i T ° i T T T ° ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). T I T IT DITI II V V I µ V I II i V V I i i V I -1.1 II I µ V V II i V V I I i V I V I I V I I i V 8 V I I i V I 8 V I I V I I i I V V T i I V V I V V T i i T I V V i V V I i i V V i i Ti I I I I i i I i µ D I ? 8 ZTX510 TYPICAL CHARACTERISTICS 1000 IB=-5.0mA -250 IB=-4.5mA IB=-4.0mA 800 IB=-3.5mA -200 IB=-3.0mA IB=-2.5mA VCB=-5V 600 f=100MHz -150 IB=-2.0mA IB=-1.5mA 400 -100 IB=-1.0mA IB=-0.5mA 200 -50 0 0 0 -10 -20 -30 -40 -50 0 -1 -2 -3 -4 -5 IC - (mA) VCE(sat) - (Volts) IC v fT VCE(sat) v IC -20 -100 IB=-10mA IB=-8mA IB=-100µA to 0µA in 10µA steps IB=-6mA -16 -80 IB=-4mA IB=-2mA IB=-100µA

See also transistors datasheet: ZTX503L , ZTX503M , ZTX504 , ZTX504K , ZTX504L , ZTX504M , ZTX510 , ZTX510K , AD161 , ZTX510M , ZTX530 , ZTX530K , ZTX530M , ZTX531 , ZTX531K , ZTX531L , ZTX531M .

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