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BLT81 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BLT81

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 2

Maximum collector-base voltage |Ucb|, V: 20

Maximum collector-emitter voltage |Uce|, V: 9.5

Maximum emitter-base voltage |Ueb|, V: 2.5

Maximum collector current |Ic max|, A: 0.5

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF: 2.7

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of BLT81 transistor: SOT223

BLT81 Equivalent Transistors - Cross-Reference Search

BLT81 PDF document for downloads:

1.1. blt81.pdf Size:81K _philips

DISCRETE SEMICONDUCTORS DATA SHEET BLT81 UHF power transistor 1996 May 09 Product specification Supersedes data of November 1992 Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. handbook, halfpage 4 APPLICATIONS c • Hand-held radio equipment in the 900 MHz communication band. b DESCRIPTION e NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. 1 2 3 MAM043 - 1 PINNING - SOT223 Top view PIN SYMBOL DESCRIPTION 1 e emitter 2 b base 3 e emitter Fig.1 Simplified outline and symbol. 4 c collector QUICK REFERENCE DATA RF performance at Ts ? 60 °C in a common emitter test circuit (see Fig.7). f VCE PL Gp ?C MODE OF OPERATION (MHz) (V) (W) (dB) (%) 7.5 1.2 ?6 ?60 CW, class-B narrow band 900 6 1.2 typ. 6.5 typ. 77 1996 May 09 2 Philips Semiconductors Product specification UHF power transistor BLT81 LIMITING VALUES

See also transistors datasheet: BLS3135-50 , BLS3135-65 , BLT13 , BLT52 , BLT53 , BLT61 , BLT70 , BLT71/8 , C103 , BLT82 , BLT94 , BLU11/SL , BLU56 , BLU86 , BLV12 , BLV193 , BLV194 .

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