ZXTP25020DFL Transistor Datasheet. Parameters and Characteristics.

Type Designator: ZXTP25020DFL

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.35

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 20

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 1.5

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz: 290

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 300

Noise Figure, dB: -

Package of ZXTP25020DFL transistor: SOT23

ZXTP25020DFL Equivalent Transistors - Cross-Reference Search

ZXTP25020DFL PDF document for downloads:

1.1. zxtp25020dfh.pdf Size:516K _diodes

ZXTP25020DFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -4V IC(cont) = 4A VCE(sat) < 60 mV @ 1A RCE(sat) = 39 m PD = 1.25W Complementary part number ZXTN25020DFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally B suited to applications where space is at a premium. Features E • High power dissipation SOT23 package • High peak current • High gain • Low saturation voltage E Applications C • MOSFET gate drivers • Power switches B • Motor control Pinout - top view Ordering information Device Reel size Tape width Quantity per reel (inches) (mm) ZXTP25020DFHTA 7 8 3000 Device marking 1A3 Issue 1 - July 2006 1 www.zetex.com © Zetex Semiconductors plc 2006 ZXTP25020DFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -25 V Coll

1.2. zxtp25020dg.pdf Size:335K _diodes

ZXTP25020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC(cont) = 6A VCE(sat) < -65mV @ -1A RCE(sat) = 42m PD = 3.0W Complementary part number ZXTN25020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. B Features • High peak current E • Low saturation voltage • High gain • High power dissipation Applications E • Load switch • Motor drive C C • Disconnect switch • Regulator circuit B Pinout - top view Ordering information Device Reel size Tape width Quantity (inches) (mm) per reel ZXTP25020DGTA 7 12 1000 Device marking • ZXTP25 020D Issue 1- December 2007 1 www.zetex.com © Zetex Semiconductors plc 2007 ZXTP25020DG Absolute maximum ratings Parameter Symbol Limit Unit Collector-Base voltage BVCBO -25 V Collector-Emitter voltage BVCEO -20 V Emi

1.3. zxtp25020bfh.pdf Size:379K _diodes

ZXTP25020BFH 20V, SOT23, PNP medium power transistor Summary BVCEX > -40V BVCEO > -20V BVECO > -7V IC(cont) = -4A RCE(sat) = 32 m VCE(sat) < -60mV @ 1A PD = 1.25W Complementary part number ZXTN25020BFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally B suited to applications where space is at a premium. Features • High power dissipation SOT23 package E • High peak current • Low saturation voltage • 40V forward blocking voltage • 7V reverse blocking voltage E Applications • MOSFET and IGBT gate driving C • DC - DC converters • Motor drive B • High side driver Pinout - top view • Battery charging Ordering information Device Reel size Tape width Quantity per reel (inches) (mm) ZXTP25020BFHTA 7 8 3,000 Device marking 1A9 Issue 2 - March 2008 1 www.zetex.com © Zetex Semiconductors pl

1.4. zxtp25020cfh.pdf Size:376K _diodes

ZXTP25020CFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC(cont) = -4A RCE(sat) = 34m VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25020CFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally B suited to applications where space is at a premium. Features E • High power dissipation SOT23 package • High peak current • Low saturation voltage • 7V reverse blocking voltage Applications E • MOSFET and IGBT gate driving • DC - DC converters C • Motor drive B • High side driver Pinout - top view Ordering information Device Reel size Tape width Quantity per reel (inches) (mm) ZXTP25020CFHTA 7 8 3,000 Device marking 1B2 Issue 3 - March 2008 1 www.zetex.com © Zetex Semiconductors plc 2008 ZXTP25020CFH Absolute maximum ratings Parameter Symbo

1.5. zxtp25020dz.pdf Size:391K _diodes

ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC(cont) = 5A VCE(sat) < -65mV @ -1A RCE(sat) = 39m PD = 2.4W Complementary part number ZXTN25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management B functions Features • High peak current E • Low saturation voltage • High gain • SOT89 package Applications E • DC-DC converters • Load switch C C • Motor drive • Disconnect switch B • MOSFET and IGBT gate drive Pinout - top view Ordering information Device Reel size Tape width Quantity (inches) (mm) per reel ZXTP25020DZTA 7 12 1000 Device marking • 1L5 Issue 1- December 2007 1 www.zetex.com © Zetex Semiconductors plc 2007 ZXTP25020DZ Absolute maximum ratings Parameter Symbol Limit Unit Collector-Base voltage VCBO -25 V Collector-Emitter voltage VCEO -

1.6. zxtp25020dfl.pdf Size:459K _diodes

ZXTP25020DFL 20V, SOT23, PNP low power transistor Summary BVCEO > -20V BVECO > -4V IC(cont) = 1.5A VCE(sat) < 85 mV @ 1A RCE(sat) = 54m PD = 350mW Complementary part number ZXTN25020DFL Description C Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. B Features • High peak current E • Low saturation voltage Applications E • DC-DC converters • MOSFET and IGBT gate driving C B Pinout - top view Ordering information Device Reel size Tape width Quantity per reel (inches) (mm) ZXTP25020DFLTA 7 8 3000 Device marking 1F2 Issue 1 - January 2007 1 www.zetex.com © Zetex Semiconductors plc 2007 ZXTP25020DFL Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -25 V Collector-emitter voltage (forward blocking) VCEO -20 V Emitter-collector voltage (reverse blocking) VECO -4 V Emitter-base voltage VEBO -7 V Continuous collector

1.7. zxtp25020cff.pdf Size:438K _diodes

ZXTP25020CFF 20V, SOT23F, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC(cont) = -4.5A RCE(sat) = 41m VCE(sat) < -65mV @ 1A PD = 1.5W Description C Advanced process capability and packaging maximise the power handling and performance of this small outline transistor. The reverse blocking capability of the transistor can often result in the elimination of B a series connected Schottky diode commonly required with either bipolar transistors or MOSFETs when used in battery charging applications. Features E • 20V PNP • Very low saturation voltage E • 7V reverse blocking capability • High pulse current C • Low profile SOT23F package B Applications Pinout - top view • Mobile phone charging circuits • Disconnect switch in portable products • High side driving • Motor control • DC-DC convertors • MOSFET and IGBT gate driving Ordering information Device Reel size Tape width Quantity (inches) (mm) per reel ZXTP25020CFFTA 7 8 3000 Device

See also transistors datasheet: ZXTP23015CFH , ZXTP25012EFH , ZXTP25012EZ , ZXTP25015DFH , ZXTP25020BFH , ZXTP25020CFF , ZXTP25020CFH , ZXTP25020DFH , BC557 , ZXTP25020DG , ZXTP25020DZ , ZXTP26020DMF , ZXTP717MA , ZXTP718MA , ZXTP749F , 2DA1774Q , 2DA1774QLP .

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