| |
BC857BLP
Transistor Datasheet. Parameters and Characteristics. Type Designator: BC857BLP
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.25
Maximum collector-base voltage |Ucb|, V: 0
Maximum collector-emitter voltage |Uce|, V: 45
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 0.1
Maximum junction temperature (Tj), ยฐC:
Transition frequency (ft), MHz: 100
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 220
Noise Figure, dB: - Package of BC857BLP
transistor: X1-DFN1006-3
BC857BLP
Equivalent Transistors - Cross-Reference Search BC857BLP
PDF document for downloads:
1.1. bc857blp4.pdf  Size:139K _diodes  |
 | BC857BLP4
45V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features Mechanical Data
Epitaxial Die Construction Case: DFN1006H4-3
Ultra-Small Leadless Surface Mount Package Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
Ultra-low Profile (0.40mm max)
Moisture Sensitivity: Level 1 per J-STD-020
Complementary NPN Type Available (BC847BLP4)
Terminals: Finish ? NiPdAu over Copper leadframe. Solderable
Lead Free, RoHS Compliant (Note 1)
per MIL-STD-202, Method 208
Halogen and Antimony Free "Green" Device (Note 2)
Weight: 0.0008 grams (approximate)
C
DFN1006H4-3
B
B
C
E
E
Bottom View Device Symbol Top View
Device Schematic
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
BC857BLP4-7 F2 7 8 3,000
BC857BLP4-7B F2 7 8 10,000
Notes: 1. No purposefully added lead.
2. Diodes Inc's "Green" policy can be found on our website at ht |
1.2. bc857blp.pdf Size:90K _diodes  |
 | BC857BLP
50V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features Mechanical Data
Epitaxial Die Construction Case: DFN1006-3
Complementary NPN Type Available (BC847BLP) Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
Ultra-Small Leadless Surface Mount Package
Moisture Sensitivity: Level 1 per J-STD-020
Lead Free, RoHS Compliant (Note 1)
Terminals: Finish ? NiPdAu over Copper leadframe. Solderable
Halogen and Antimony Free "Green" Device (Note 2)
per MIL-STD-202, Method 208
Qualified to AEC-Q101 Standards for High Reliability
Weight: 0.0009 grams
DFN1006-3
C
B
B
C
E
E
Bottom View Device Symbol Top View
Pin-Out
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
BC857BLP-7 3W 7 8mm 3,000
BC857BLP-7B 3W 7 8mm 10,000
Notes: 1. No purposefully added lead.
2. Halogen and Antimony Free. Diodes Inc's "Green" policy can be found |
4.1. bc857bs.pdf Size:111K _philips  |
 | DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
MBD128
BC857BS
PNP general purpose double
transistor
Product data sheet 1999 Apr 26
Supersedes data of 1997 Jul 09
NXP Semiconductors Product data sheet
PNP general purpose double transistor BC857BS
FEATURES PINNING
Low collector capacitance
PIN DESCRIPTION
Low collector-emitter saturation voltage
1, 4 emitter TR1; TR2
Closely matched current gain
2, 5 base TR1; TR2
Reduces number of components and boardspace
6, 3 collector TR1; TR2
No mutual interference between the transistors.
APPLICATIONS
6 5 4
handbook, halfpage
General purpose switching and amplification.
6 5 4
TR2
DESCRIPTION
TR1
PNP double transistor in an SC-88; SOT363 plastic
1 2 3
package. NPN complement: BC847BS.
1 2 3
Top view MAM339
MARKING
Fig.1 Simplified outline (SC-88; SOT363)
TYPE NUMBER MARKING CODE
and symbol.
BC857BS 3Ft
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
S |
4.2. bc857bs_2.pdf Size:51K _philips  |
 | DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
MBD128
BC857BS
PNP general purpose double
transistor
1999 Apr 26
Product specification
Supersedes data of 1997 Jul 09
Philips Semiconductors Product specification
PNP general purpose double transistor BC857BS
FEATURES PINNING
Low collector capacitance
PIN DESCRIPTION
Low collector-emitter saturation voltage
1, 4 emitter TR1; TR2
Closely matched current gain
2, 5 base TR1; TR2
Reduces number of components and boardspace
6, 3 collector TR1; TR2
No mutual interference between the transistors.
APPLICATIONS
6 5 4
handbook, halfpage
General purpose switching and amplification.
6 5 4
TR2
DESCRIPTION
TR1
PNP double transistor in an SC-88; SOT363 plastic
1 2 3
package. NPN complement: BC847BS.
1 2 3
Top view MAM339
MARKING
Fig.1 Simplified outline (SC-88; SOT363)
TYPE NUMBER MARKING CODE
and symbol.
BC857BS 3Ft
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134 |
4.3. bc857bv.pdf Size:121K _philips  |
 | DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
BC857BV
PNP general purpose double
transistor
Product data sheet 2001 Nov 07
Supersedes data of 2001 Aug 10
NXP Semiconductors Product data sheet
PNP general purpose double transistor BC857BV
FEATURES PINNING
300 mW total power dissipation
PIN DESCRIPTION
Very small 1.6 mm ? 1.2 mm ? 0.55 mm ultra thin
1, 4 emitter TR1; TR2
package
2, 5 base TR1; TR2
Excellent coplanarity due to straight leads
6, 3 collector TR1; TR2
Improved thermal behaviour due to flat leads
Reduces number of components as replacement of two
SC-75/SC-89 packaged BISS transistors
Reduces required board space
Reduces pick and place costs.
6 5 4
6 5 4
APPLICATIONS
TR2
General purpose switching and amplification.
TR1
DESCRIPTION
1 2 3
1 2 3
PNP double transistor in a SOT666 plastic package.
Top view MAM450
NPN complement: BC847BV.
MARKING
TYPE NUMBER MARKING CODE
Fig.1 Simplified outline (SOT666) and symbol.
BC857BV |
4.4. bc857bw.pdf Size:41K _st  |
 | BC857BW
ฎ
SMALL SIGNAL PNP TRANSISTOR
PRELIMINARY DATA
Type Marking
BC857BW 3FW
SILICON EPITAXIAL PLANAR PNP
TRANSISTOR
MINIATURE SOT-323 PLASTIC PACKAGE
FOR SURFACE MOUNTING CIRCUITS
TAPE AND REEL PACKING
THE NPN COMPLEMENTARY TYPE IS
BC847BW
APPLICATIONS
SOT-323
WELL SUITABLE FOR PORTABLE
EQUIPMENT
SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) -50 V
V Collector-Emitter Voltage (I = 0) -45 V
CEO B
VEBO Emitter-Base Voltage (IC = 0) -5 V
IC Collector Current -100 mA
ICM Collector Peak Current -200 mA
Ptot Total Dissipation at TC = 25 oC 200 mW
o
T Storage Temperature -65 to 150 C
stg
o
Tj Max. Operating Junction Temperature 150 C
1/4
June 2002
BC857BW
THERMAL DATA
o
Rthj-amb Thermal Resistance Junction-Ambient Max 625 C/W
Device mounted on a PCB area of 1 cm2.
ELECTRICAL CHARACTERISTICS (T = |
4.5. bc857b.pdf Size:57K _st  |
 | BC857B
ฎ
SMALL SIGNAL PNP TRANSISTOR
PRELIMINARY DATA
Type Marking
BC857B 3F
SILICON EPITAXIAL PLANAR PNP
TRANSISTOR
MINIATURE SOT-23 PLASTIC PACKAGE
FOR SURFACE MOUNTING CIRCUITS
TAPE AND REEL PACKING
THE NPN COMPLEMENTARY TYPE IS
BC847B
APPLICATIONS
SOT-23
WELL SUITABLE FOR PORTABLE
EQUIPMENT
SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) -50 V
V Collector-Emitter Voltage (I = 0) -45 V
CEO B
VEBO Emitter-Base Voltage (IC = 0) -5 V
IC Collector Current -100 mA
ICM Collector Peak Current -200 mA
Ptot Total Dissipation at TC = 25 oC 250 mW
o
T Storage Temperature -65 to 150 C
stg
o
Tj Max. Operating Junction Temperature 150 C
1/4
June 2002
BC857B
THERMAL DATA
o
Rthj-amb Thermal Resistance Junction-Ambient Max 500 C/W
Device mounted on a PCB area of 1 cm2.
ELECTRICAL CHARACTERISTICS (T = 25 oC u |
4.6. bc857b.pdf Size:988K _rohm  |
 | PNP small signal transistor
BC857B
?Features ?Dimensions (Unit : mm)
1) Ideal for switching and AF amplifier applications.
BC857B
2) High current gain.
2.9 0.95
0.4
0.45
(3)
?Packaging specifications
Package Taping
(2) (1)
Type Code T116
0.95 0.95
0.15
1.9
Basic ordering unit (pieces) 3000
(1)Emitter
BC857B
(2)Base
Each lead has same dimensions
(3)Collector
Abbreviated symbol : G3F
?Absolute maximum ratings (Ta=25?C)
Parameter Symbol Limits Unit
Collector-base voltage VCBO -50 V
Collector-emitter voltage VCEO -45 V
Emitter-base voltage VEBO -5 V
Collector current IC -0.1 A
0.20 W
Collector power dissipation PC
0.35 W
?
Junction temperature Tj 150 ฐC
Storage temperature Tstg -65 to 150 ฐC
Mounted on a 7?5?0.6 mm CERAMIC SUBSTRATE
?
?Electrical characteristics (Ta=25?C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-emitter breakdown voltage BVCEO -45 - - V IC= -1mA
Collector-base breakdown voltage BVCBO -50 - - V IC= -50ตA
Em |
4.7. bc857b(rohm).pdf Size:25K _rohm _0001.jpg) |
_0002.jpg) | Transistors BC857B
(SPEC-A32)
607
|
4.8. bc857bs.pdf Size:106K _diodes  |
 | BC857BS
DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
Ideally Suited for Automated Insertion
SOT-363
A
For Switching and AF Amplifier Applications
Ultra-Small Surface Mount Package Dim Min Max
Lead Free/RoHS Compliant (Note 2)
A 0.10 0.30
"Green" Device (Note 4 and 5)
B C
B 1.15 1.35
C 2.00 2.20
Mechanical Data
D 0.65 Nominal
Case: SOT-363
H
F 0.30 0.40
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 K
M H 1.80 2.20
Moisture Sensitivity: Level 1 per J-STD-020C
J ? 0.10
Terminals: Solderable per MIL-STD-202, Method 208
J
D F L K 0.90 1.00
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe). L 0.25 0.40
C2 B1 E1
Terminal Connections: See Diagram
M 0.10 0.25
Marking: K3W (See Page 3)
? 0ฐ 8ฐ
Ordering Information (See Page 3)
All Dimensions in mm
Weight: 0.006 grams
E2 B2 C1
TOP VIEW
Maximum Ratings @TA = 25ฐC unless otherwise specified
|
4.9. bc857bv.pdf Size:106K _diodes  |
 | BC857BV
PNP DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Please click here to visit our online spice models database.
Features Mechanical Data
Epitaxial Die Construction Case: SOT-563
Complementary PNP Type Available (BC847BV) Case Material: Molded Plastic, Green Molding Compound,
Note 6. UL Flammability Classification Rating 94V-0
Ultra-Small Surface Mount Package
Moisture Sensitivity: Level 1 per J-STD-020D
Lead Free By Design/RoHS Compliant (Note 3)
Terminal Connections: See Diagram
"Green" Device (Notes 5 and 6)
Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Qualified to AEC-Q101 Standards for High Reliability
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.003 grams (approximate)
C1 B2 E2
E1 B1 C2
Top View Bottom View Device Schematic (Note 1)
Maximum Ratings @TA = 25ฐC unless otherwise specified
Characteristic Symbol Value Unit
Co |
4.10. bc856a_bc857b_bc858c_sot-23.pdf Size:195K _mcc  |
 | BC856A
MCC
Micro Commercial Components
TM
THRU
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
Phone: (818) 701-4933
BC858C
Fax: (818) 701-4939
Features
PNP Small
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Signal Transistor
Moisure Sensitivity Level 1
Ideally Suited for Automatic Insertion
310mW
150oC Junction Temperature
For Switching and AF Amplifier Applications
SOT-23
Mechanical Data
A
Case: SOT-23, Molded Plastic
D
C
Terminals: Solderable per MIL-STD-202, Method 208
B
Polarity: See Diagram C
Weight: 0.008 grams ( approx.)
B E
F E
Marking Code (Note 2)
Type Marking Type Marking
G H J
BC856A 3A BC857C 3G
BC856B 3B BC858A 3J K
DIMENSIONS
BC857A 3E BC858B 3K
INCHES MM
BC857B 3F BC858C 3L
DIM MIN MAX MIN MAX NOTE
A .110 .120 2.80 3.04
B .083 .098 2.10 2.64
Maximum Ratings @ 25oC Unless Otherwise Specifie |
4.11. bc857bv.pdf Size:207K _mcc  |
 | MCC
Micro Commercial Components
TM
20736 Marilla Street Chatsworth
BC857BV
Micro Commercial Components
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
PNP
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Plastic-Encapsulate
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Transistors
Epitaxial Die Construction
Complementary NPN Type Available (BC847BV)
Ultra-small Surface Mount Package
Marking:K5V
SOT-563
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage -45 V
VCBO Collector-Base Voltage -50 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current-Continuous -0.1 A
PC Collector Dissipation 0.15 W
Thermal Resistance Junction to Ambient 833 /W
R
JA
TJ Operating Junction Temperature -55 to +150
TSTG Storage Temperature -55 to +150
Electrical Characteristics @ 25OC Unless Otherwise Specified
S |
4.12. bc857btt1_bc857ctt1.pdf Size:74K _onsemi  |
 | BC857BTT1, BC857CTT1
Preferred Devices
General Purpose Transistor
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT-416/SC-75 which is
designed for low power surface mount applications.
http://onsemi.com
Features
COLLECTOR
Pb-Free Package is Available*
3
1
BASE
MAXIMUM RATINGS (TA = 25ฐC)
Rating Symbol Max Unit
2
Collector-Emitter Voltage VCEO -45 V
EMITTER
Collector-Base Voltage VCBO -50 V
Emitter-Base Voltage VEBO -5.0 V
3
Collector Current - Continuous IC -100 mAdc
CASE 463
SOT-416
Maximum ratings are those values beyond which device damage can occur.
2
STYLE 1
Maximum ratings applied to the device are individual stress limit values (not
1
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
MARKING DIAGRAM
Characteristic Symbol |
4.13. bc856bwt1_bc857bwt1_bc858awt1-series.pdf Size:143K _onsemi  |
 | BC856BWT1 Series,
BC857BWT1 Series,
BC858AWT1 Series
General Purpose
Transistors
http://onsemi.com
PNP Silicon
COLLECTOR
3
These transistors are designed for general purpose amplifier
applications. They are housed in the SC--70/SOT--323 which is
designed for low power surface mount applications. 1
BASE
Features
? These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
2
Compliant
EMITTER
3
SC--70/SOT--323
CASE 419
MAXIMUM RATINGS (TA =25?C unless otherwise noted) 1 STYLE 3
2
Rating Symbol Value Unit
Collector-Emitter Voltage BC856 VCEO --65 V
BC857 --45 MARKING DIAGRAM
BC858 --30
Collector-Base Voltage BC856 VCBO --80 V
BC857 --50
xx M G
BC858 --30
G
Emitter--Base Voltage VEBO --5.0 V
1
Collector Current -- Continuous IC --100 mAdc
xx = Specific Device Code
THERMAL CHARACTERISTICS
M = Date Code*
G = Pb--Free Package
Characteristic Symbol Max Unit
(Note: Microdot may be in either location)
Total Device Dissipation FR-- 5 Board, PD 150 mW
|
4.14. bc856bdw1t1g_bc857bdw1t1g_bc858cdw1t1g.pdf Size:172K _onsemi  |
 | BC856BDW1T1G,
BC857BDW1T1G Series,
BC858CDW1T1G Series
Preferred Devices
Dual General Purpose
Transistors
http://onsemi.com
PNP Duals
(3) (2) (1)
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT-363/SC-88 which is
designed for low power surface mount applications.
Q1 Q2
Features
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
(4) (5) (6)
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
1
Collector-Emitter Voltage VCEO V
BC856 -65
SOT-363/SC-88
BC857 -45
CASE 419B
BC858 -30
STYLE 1
Collector-Base Voltage VCBO V
BC856 -80
BC857 -50 MARKING DIAGRAM
BC858 -30
Emitter-Base Voltage VEBO -5.0 V
Collector Current -Continuous IC -100 mAdc
3x M G
G
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation Per Device PD 380 mW
3x = Specific Device Code
FR-5 Board (Note 1) 250
x = B, F, G, or L
TA = 25ฐC
Derate Above 25ฐC 3.0 mW/ฐC (See Ordering Information)
M = D |
4.15. bc857bv.pdf Size:251K _secos  |
 | BC857BV
Dual PNP
Plastic-Encapsulated Transistors
Elektronische Bauelemente
RoHS Compliant Product
A suffix of โ-Cโ specifies halogen & lead-free
SOT-563
FEATURES
A
Epitaxial Die Construction
Complementary NPN Types Available
(BC847BV)
B
Ultra-Small Surface Mount Package
MARKING
J
D G H
K5V
F E
C
PACKAGE INFORMATION
Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
Package MPQ Leader Size
A 1.50 1.70 F 0.09 0.16
B 1.50 1.70 G 0.45 0.55
C 0.525 0.600 H 0.17 0.27
SOT-563 3K 7 inch
D 1.10 1.30 J 0.10 0.30
E 0.05 REF.
MAXIMUM RATINGS (TA = 25ยฐC unless otherwise specified)
Parameter Symbol Ratings Unit
Collector-Base Voltage V -50 V
CBO
Collector-Emitter Voltage VCEO -45 V
Emitter-Base Voltage V -5 V
EBO
Collector Current โ Continuous I -100 mA
C
Collector Power Dissipation P 0.15 W
C
Thermal Resistance. Junction to Ambient Air R? 833 ยฐC / W
JA
Junction & Storage temperature T , T 150, -55~150 ยฐC
J |
4.16. bc857bv.pdf Size:593K _htsemi  |
 | BC857BV
DUAL TRANSISTOR (PNP)
FEATURES
SOT-563
Epitaxial Die Construction
Complementary NPN Types Available
(BC847BV)
Ultra-Small Surface Mount Package
Marking: K5V
MAXIMUM RATINGS (TA=25? unless otherwise noted )
Symbol Parameter Value Units
VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -45 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.1 A
PC Collector Power Dissipation 0.15 W
R?JA Thermal Resistance. Junction to Ambient Air 833 ?/W
TJ Junction Temperature 150 ?
Tstg Storage Temperature -55 to +150 ?
ELECTRICAL CHARACTERISTICS(Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-10?A,IE=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -45 V
Emitter-base breakdown voltage V(BR)EBO IE=-1?A,IC=0 -5 V
Collector cut-off current ICBO VCB=-30V,IE=0 -15 nA
DC current gain hFE VCE=-5V,IC=-2mA 220 475
VCE( |
4.17. bc857bv.pdf Size:214K _lge  |
 | BC857BV
SOT-563 Dual Transistor (PNP)
SOT-563
1.600
Features 1.200 1.600
Epitaxial Die Construction
0.220
Complementary NPN Types Available
(BC847BV)
0.500
Ultra-Small Surface Mount Package
0.565
Marking: K5V
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25? unless otherwise noted )
Symbol Parameter Value Units
VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -45 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.1 A
PC Collector Power Dissipation 0.15 W
R?JA Thermal Resistance. Junction to Ambient Air 833 ?/W
TJ Junction Temperature 150 ?
Tstg Storage Temperature -55 to +150 ?
ELECTRICAL CHARACTERISTICS(Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-10?A,IE=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -45 V
Emitter-base breakdown voltage V(BR)EBO IE=-1?A,IC=0 -5 V
Collector cut-of |
See also transistors datasheet: BC847BLP4
, BC847BS
, BC847BT
, BC847BVC
, BC847CDLP
, BC847CT
, BC848CT
, BC857AT
, TIP122
, BC857BLP4
, BC857BS
, BC857BT
, BC857BV
, BC857CT
, BCP5110
, BCP5116
, BCP5410
. Keywords| BC857BLP
Datasheet | BC857BLP
Datenblatt | BC857BLP
RoHS | BC857BLP
Distributor | | BC857BLP
Application Notes | BC857BLP
Component | BC857BLP
Circuit | BC857BLP
Schematic | | BC857BLP
Equivalent | BC857BLP
Cross Reference | BC857BLP
Data Sheet | BC857BLP
Fiche Technique |
|
