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ZXTP5401G Transistor Datasheet. Parameters and Characteristics.

Type Designator: ZXTP5401G

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 2

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 150

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.6

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 60

Noise Figure, dB: -

Package of ZXTP5401G transistor: SOT223

ZXTP5401G Equivalent Transistors - Cross-Reference Search

ZXTP5401G PDF doc:

1.1. zxtp5401g.pdf Size:243K _diodes

ZXTP5401G 150V, SOT223, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC(cont) = -600mA PD = 2W Complementary part number ZXTN5551G Description C A high voltage PNP transistor in a surface mount package Features B • 150V rating • SOT223 package E Applications E • High voltage amplification C C Ordering information Device Reel size Tape width Quantity per B (inches) (mm) reel Pinout - top view ZXTP5401GTA 7 12 1000 ZXTP5401GTC 13 12 4000 Device marking ZXTP 5401 Issue 1 - August 2007 1 www.zetex.com © Zetex Semiconductors plc 2007 ZXTP5401G Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -160 V Collector-emitter voltage VCEO -150 V Emitter-base voltage VEBO -5 V IC -600 mA Continuous collector current(a) Peak collector current IC -2 A PD 2W Power dissipation at TA =25°C(a) Linear derating factor 16 mW/°C Operating and storage temperature range Tj, Tstg -55 to 150 °C Thermal resistance Param

2.1. zxtp5401z.pdf Size:247K _diodes

ZXTP5401Z 150V, SOT89, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC(cont) = -600mA PD = 1.2W Complementary part number ZXTN5551Z Description C A high voltage PNP transistor in a small outline surface mount package. Features B • 150V rating • SOT89 package E Applications • High voltage amplification E Ordering information C C Device Reel size Tape width Quantity (inches) (mm) per reel B ZXTP5401ZTA 7 12 1000 Pinout - top view Device marking P01 Issue 1 - August 2007 1 www.zetex.com © Zetex Semiconductors plc 2007 ZXTP5401Z Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -160 V Collector-emitter voltage VCEO -150 V Emitter-base voltage VEBO -5 V IC -600 mA Continuous collector current(a) Pulsed collector current ICM -2 A PD 1.2 W Power dissipation at TA = 25°C(a) Linear derating factor 9.6 mW/°C Operating and storage temperature range Tj, Tstg -55 to 150 °C Thermal resistance Parameter Sy

2.2. zxtp5401fl.pdf Size:162K _diodes

ZXTP5401FL 150V, SOT23, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC(cont) = -600mA PD = 330mW Complementary part number ZXTN5551FL Description C A high voltage PNP transistor in a small outline surface mount package. Features B • 150V rating • SOT23 package E Applications E • High voltage amplification C Ordering information Device Reel size Tape width Quantity B (inches) (mm) per reel Pinout - top view ZXTP5401FLTA 7 8 3000 Device marking P01 Issue 1 - August 2007 1 www.zetex.com © Zetex Semiconductors plc 2007 ZXTP5401FL Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -160 V Collector-emitter voltage VCEO -150 V Emitter-base voltage VEBO -5 V IC -600 mA Continuous collector current(a) Pulsed collector current ICM -1 A PD 330 mW Power dissipation at Tamb =25°C(a) Linear derating factor 2.64 mW/°C Operating and storage temperature range Tj, Tstg -55 to 150 °C Thermal resistance Paramet

See also transistors datasheet: ZXTP03200BG , ZXTP03200BZ , ZXTP08400BFF , ZXTP2014G , ZXTP2014Z , ZXTP23140BFH , ZXTP25140BFH , ZXTP5401FL , KT829A , ZXTP5401Z , ZXTP558L , BC846AS , BC856AS , BCP5210 , BCP5216 , BCP5310 , BCP5316 .

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