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BCP5210 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BCP5210

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 2

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 1

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz: 150

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 63

Noise Figure, dB: -

Package of BCP5210 transistor: SOT223

BCP5210 Equivalent Transistors - Cross-Reference Search

BCP5210 PDF document for downloads:

5.1. bcp51_bcp52_bcp53_3.pdf Size:50K _philips

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BCP51; BCP52; BCP53 PNP medium power transistors 1999 Apr 08 Product specification Supersedes data of 1997 Apr 08 Philips Semiconductors Product specification PNP medium power transistors BCP51; BCP52; BCP53 FEATURES PINNING • High current (max. 1 A) PIN DESCRIPTION • Low voltage (max. 80 V) 1 base • Medium power (max. 1.3 W). 2, 4 collector 3 emitter APPLICATIONS • Audio, telephony and automotive applications handbook, halfpage 4 • Thick and thin-film circuits. 2, 4 DESCRIPTION 1 PNP medium power transistor in a SOT223 plastic package. NPN complements: BCP54, BCP55 and BCP56. 3 1 2 3 Top view MAM288 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BCP51 --45 V BCP52 --60 V BCP53 --100 V VCEO collector-emitter voltage open base BC

5.2. bcp52_bcx52.pdf Size:115K _philips

BCP52; BCX52 60 V, 1 A PNP medium power transistors Rev. 08 — 25 February 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA JEDEC BCP52 SOT223 SC-73 - BCP55 BCX52 SOT89 SC-62 TO-243 BCX55 [1] Valid for all available selection groups. 1.2 Features High current Two current gain selections High power dissipation capability 1.3 Applications Linear voltage regulators High-side switches MOSFET drivers Amplifiers 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -60 V IC collector current - - -1 A ICM peak collector current single pulse; tp ? 1ms - - -1.5 A hFE DC current gain VCE = -2V; 63 - 250 IC = -150 mA hFE selection -10 VCE = -2V; 63 - 160 IC = -150 mA hFE selection -16 VCE = -2V; 100 - 250 IC = -150 mA BCP52; BCX52 NXP Semico

5.3. bcp52-16_2.pdf Size:50K _st

BCP52-16 ® LOW POWER PNP TRANSISTOR Ordering Code Marking BCP52-16 BCP5216 SILICON EPITAXIAL PLANAR PNP MEDIUM VOLTAGE TRANSISTOR SOT-223 PLASTIC PACKAGE FOR 2 SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING 3 THE NPN COMPLEMENTARY TYPE IS 2 BCP55-16 1 APPLICATIONS SOT-223 MEDIUM VOLTAGE LOAD SWITCH TRANSISTORS OUTPUT STAGE FOR AUDIO AMPLIFIERS CIRCUITS AUTOMOTIVE POST-VOLTAGE REGULATION INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) -60 V VCEO Collector-Emitter Voltage (IB = 0) -60 V VCER -60 V Collector-Emitter Voltage (RBE = 1K?) VEBO Emitter-Base Voltage (IC = 0) -5 V IC Collector Current -1 A ICM Collector Peak Current (tp < 5 ms) -1.5 A IB Base Current -0.1 A IBM Base Peak Current (tp < 5 ms) -0.2 A Ptot Total Dissipation at Tamb = 25 oC 1.4 W o Tstg Storage Temperature -65 to 150 C o T Max. Operating Junction Temperature 150 C j 1/4 September 2003 Obsolete P

5.4. bcp52-16.pdf Size:46K _st

BCP52-16 ® LOW POWER PNP TRANSISTOR Ordering Code Marking BCP52-16 BCP5216 SILICON EPITAXIAL PLANAR PNP MEDIUM VOLTAGE TRANSISTOR SOT-223 PLASTIC PACKAGE FOR 2 SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING 3 THE NPN COMPLEMENTARY TYPE IS 2 BCP55-16 1 APPLICATIONS SOT-223 MEDIUM VOLTAGE LOAD SWITCH TRANSISTORS OUTPUT STAGE FOR AUDIO AMPLIFIERS CIRCUITS AUTOMOTIVE POST-VOLTAGE REGULATION INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) -60 V VCEO Collector-Emitter Voltage (IB = 0) -60 V VCER -60 V Collector-Emitter Voltage (RBE = 1K?) VEBO Emitter-Base Voltage (IC = 0) -5 V IC Collector Current -1 A ICM Collector Peak Current (tp < 5 ms) -1.5 A IB Base Current -0.1 A IBM Base Peak Current (tp < 5 ms) -0.2 A Ptot Total Dissipation at Tamb = 25 oC 1.4 W o Tstg Storage Temperature -65 to 150 C o T Max. Operating Junction Temperature 150 C j 1/4 September 2003 BCP52-16

5.5. bcp52-bcp53.pdf Size:71K _st

BCP52/53 MEDIUM POWER AMPLIFIER ADVANCE DATA SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED 2 FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER 3 OUTPUT STAGE 2 NPN COMPLEMENTS ARE BCP55 AND 1 BCP56 RESPECTIVELY SOT-223 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BCP52 BCP53 VCBO Collector-Base Voltage (IE = 0) -60 -100 V VCEO Collector-Emitter Voltage (IB = 0) -60 -80 V V Collector-Emitter Voltage (R = 1K?)-60 -100 V CER BE VEBO Emitter-Base Voltage (IC = 0) -5 V IC Collector Current -1 A ICM Collector Peak Current (tp < 5 ms) -1.5 A IB Base Current -0.1 A IBM Base Peak Current (tp < ms) -0.2 A P Total Dissipation at T = 25 oC2 W tot c o T Storage Temperature -65 to 150 C stg o Tj Max. Operating Junction Temperature 150 C 1/4 October 1997 BCP52/53 THERMAL DATA o Rthj-amb • Thermal Re

5.6. bcp52.pdf Size:257K _fairchild_semi

BCP52 C E C B SOT-223 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A. Sourced from Process 78. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 60 V 3 VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.2 A Operating and Storage Junction Temperature Range -55 to +150 C TJ, Tstg ° *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics TA = 25°C unless otherwise noted

5.7. bcp51_bcp52_bcp53.pdf Size:140K _siemens

PNP Silicon AF Transistors BCP 51 ... BCP 53 For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP 54 … BCP 56 (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 4 BCP 51 BCP 51 Q62702-C2107 B C E C SOT-223 BCP 51-10 BCP 51-10 Q62702-C2109 BCP 51-16 BCP 51-16 Q62702-C2110 BCP 52 BCP 52 Q62702-C2146 BCP 52-10 BCP 52-10 Q62702-C2112 BCP 52-16 BCP 52-16 Q62702-C2113 BCP 53 BCP 53 Q62702-C2147 BCP 53-10 BCP 53-10 Q62702-C2115 BCP 53-16 BCP 53-16 Q62702-C2116 1) For detailed information see chapter Package Outlines. 5.91 Semiconductor Group 1 BCP 51 ... BCP 53 Maximum Ratings Parameter Symbol Values BCP 51 BCP 52 BCP 53 Unit Collector-emitter voltage VCE0 45 60 80 V RBE ? 1k? VCER 45 60 100 Collector-base voltage VCB0 45 60 100 Emitter-base voltage VEB0 5 Collector current IC 1 A Peak collector current ICM 1.5 Base current IB 100 mA Peak base current IBM

5.8. bcp51m_bcp52m_bcp53m.pdf Size:31K _siemens

BCP 51M ... BCP 53M PNP Silicon AF Transistor 4 • For AF driver and output stages 5 • High collector current • Low collector-emitter saturation voltage 3 • Complementary types: BCP 54M...BCP 56M(NPN) 2 1 VPW05980 Type Marking Ordering Code Pin Configuration Package BCP 51M AAs Q62702-C2592 1 = B 2 = C 3 = E 4 n.c. 5 = C SCT-595 BCP 52M AEs Q62702-C2593 BCP 53M AHs Q62702-C2594 Maximum Ratings Parameter Symbol BCP 51M BCP 52M BCP 53M Unit Collector-emitter voltage VCEO 45 60 80 V Collector-base voltage VCBO 45 60 100 Emitter-base voltage VEBO 5 5 5 DC collector current IC 1 mA Peak collector current ICM 1.5 A Base current IB 100 mA Peak base current IBM 200 Ptot 1.7 W Total power dissipation, TS ? 77 °C Junction temperature Tj 150 °C Storage temperature Tstg -65...+150 Thermal Resistance 1) Junction ambient RthJA K/W ? 98 Junction - soldering point RthJS ? 43 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu Semiconductor Group 1 Au -11-1998

5.9. bcp52.pdf Size:42K _diodes

SOT223 PNP SILICON PLANAR BCP52 MEDIUM POWER TRANSISTOR ISSUE 3 – AUGUST 1995 T i I i C i II V T T E C T I D T I B ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T ° i T T T ° ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). T I T IT DITI II V V I µ V I II i V V I V I i V V I µ V I II I V V µ V V T ° i I µ V V II i V V I I i V I i T V V I V V V I i I V V T i I V V I V V I V V T i i T I V V I i i I i µ D I ?

See also transistors datasheet: ZXTP23140BFH , ZXTP25140BFH , ZXTP5401FL , ZXTP5401G , ZXTP5401Z , ZXTP558L , BC846AS , BC856AS , SS8050 , BCP5216 , BCP5310 , BCP5316 , BCP5510 , BCP5516 , BCP5610 , BCP5616 , BCX5210 .

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