FCX593 Transistor Datasheet. Parameters and Characteristics.

Type Designator: FCX593

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 1

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 1

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of FCX593 transistor: SOT89

FCX593 Equivalent Transistors - Cross-Reference Search

FCX593 PDF document for downloads:

1.1. fcx593.pdf Size:249K _diodes

FCX593 SOT89 Silicon planar high voltage transistor Complementary part number - FMMT493 C Device marking - P93 B E E C C B Pinout - top view Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -100 V Emitter-base voltage VEBO -5 V Peak pulse current ICM -2 A Continuous collector current IC -1 A Base current IB -200 mA Power dissipation at Tamb =25°CPtot 1W Operating and storage temperature range Tj, Tstg -65 to +150 °C Issue 4 - November 2006 1 www.zetex.com © Zetex Semiconductors plc 2006 FCX593 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Max. Unit Conditions Base breakdown voltages V(BR)CBO -120 V IC = -100 A V(BR)CEO -100 V IC = -10mA (*) V(BR)EBO -5 V IE = -100 A Cut-off currents ICBO -100 nA VCB = -100V IEBO -100 nA VEB = -4V ICES -100 nA VCES = -100V Saturation voltages -0.2 V IC = -250mA, IB = -25mA(*) VCE(sat) -0.3 V IC = -250mA

5.1. fcx591a.pdf Size:194K _diodes

A Product Line of Diodes Incorporated FCX591A 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -40V • Case: SOT89 • IC = -1A Continuous Collector Current • Case Material: Molded Plastic, “Green” Molding Compound (Note 3) • Low saturation voltage VCE(sat) < -500mV @ -1A • Complementary NPN type: FCX491A • UL Flammability Classification Rating 94V-0 • Lead-Free, RoHS Compliant (Note 1) • Moisture Sensitivity: Level 1 per J-STD-020 • Halogen and Antimony Free, Green Device (Note 3) • Terminals: Matte Tin Finish • Qualified to AEC-Q101 Standards for High Reliability • Weight: 0.052 grams (Approximate) Application • Power MOSFET & IGBT gate driving • Low loss power switching SOT89 Top View Device symbol Pin-out Top Ordering Information (Note 2) Product Marking Reel size (inches) Tape width (mm) Quantity per reel FCX591ATA P2 7 12 1000 FCX591A-7 (Note 3) P2 7 12 1000 Notes: 1. No purposefully added lead.

5.2. fcx596.pdf Size:705K _diodes

Issue 4 - November 2006 ? C E C B µ µ µ ?

5.3. fcx591.pdf Size:35K _diodes

SOT8 SI I O A A DI O HI H O A T A SISTO ISS O T I D T I T T A SO T A I ATI S T V IT II V I V 8 V II i V I V V i V I V V I I i II I I Di i i T ° i T T T ° T I A HA A T ISTI S a Ta T I IT DITI V I V 8 V I µ I V V I I V V I µ I II I V V II i I V V i I V V I i V I V V I V I I I V V I I i T V I V V I V V i T I V V i I V V 8 I V V I V V T i i I V V T i V V I i i I i µ D I ? i I i i T

5.4. fcx591.pdf Size:328K _htsemi

FCX591 TRANSISTOR (PNP) SOT-89 FEATURES 1. BASE Power dissipation 2. COLLECTOR 1 MARKING:P1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -1 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ? Tstg Storage Temperature -65-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100?A , IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO* IC= -10mA , IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A, IC=0 -5 V Collector cut-off current ICBO VCB=-60 V , IE=0 -0.1 ?A Emitter cut-off current IEBO VEB=-4 V , IC=0 -0.1 ?A Collector- Emitter cut-off current ICES VCES=-60 V, IE=0 -0.1 ?A VCE=-5V, IC= -1mA 100 VCE=-5V, IC

5.5. fcx591.pdf Size:283K _lge

FCX591 SOT-89 Transistor(PNP) 1. BASE 2. COLLECTOR 1 SOT-89 2 4.6 B 4.4 3. EMITTER 1.6 3 1.8 1.4 1.4 Features 2.6 4.25 2.4 3.75 Power dissipation 0.8 MIN 0.53 0.40 0.48 0.44 MARKING:P1 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -1 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ? Tstg Storage Temperature -65-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100?A , IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO* IC= -10mA , IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A, IC=0 -5 V Collector cut-off current ICBO VCB=-60 V ,

See also transistors datasheet: DZT491 , DZT591C , DZT651 , DZT851 , DZT951 , DZT953 , FCX1053A , FCX493 , BC237 , FMMT493A , FMMT620 , FMMTA56 , FZT1053A , HBDM60V600W , MMBT2907AT , MMDT2227 , MMDT2227M .

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