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ZXTP2029F Transistor (IC) Datasheet. Cross Reference Search. ZXTP2029F Equivalent

Type Designator: ZXTP2029F

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 1.2

Maximum collector-base voltage |Ucb|, V:

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V:

Maximum collector current |Ic max|, A: 3

Maksimalna temperatura (Tj), Β°C:

Transition frequency (ft), MHz: 150

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of ZXTP2029F transistor: SOT23

ZXTP2029F Transistor Equivalent Substitute - Cross-Reference Search

ZXTP2029F PDF:

1.1. zxtp2029f.pdf Size:432K _diodes

ZXTP2029F
ZXTP2029F

ZXTP2029F 100V, SOT23, PNP medium power transistor Summary V(BR)CEV > -130V, V(BR)CEO > -100V IC(cont) = -3A RCE(sat) = 45m typical VCE(sat) < -80mV @ -1A PD = 1.2W Complementary part number ZXTN2020F Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratin

3.1. zxtp2027f.pdf Size:433K _diodes

ZXTP2029F
ZXTP2029F

ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V(BR)CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number ZXTN2018F Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratin

4.1. zxtp2012a.pdf Size:116K _diodes

ZXTP2029F
ZXTP2029F

ο»ΏZXTP2012A 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = -60V : RSAT = 38m ; IC = -3.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES E-line β€’ 3.5 amps continuous current β€’ Up

4.2. zxtp2013g.pdf Size:125K _diodes

ZXTP2029F
ZXTP2029F

ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES SOT223 • 5 amps continuous current • Up to 10 a

4.3. zxtp2006e6.pdf Size:94K _diodes

ZXTP2029F
ZXTP2029F

ZXTP2006E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BVCEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Packaged in the SOT23-6 outline this new low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES SOT23-6 • 3.5 Amps continuous current • Extremely lo

4.4. zxtp2041f.pdf Size:215K _diodes

ZXTP2029F
ZXTP2029F

A Product Line of Diodes Incorporated ZXTP2041F 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR Features Mechanical Data • V(BR)CEO > -40V • Case: SOT23 • High current capability IC = -1A • Moisture Sensitivity: Level 1 per J-STD-020 • Low saturation voltage VCE(sat) < -500mV @ -1A • UL Flammability Rating 94V-0 • “Lead Free”, RoHS Compliant (Note 1) • Terminals: Matte Tin Finish

4.5. zxtp2008z.pdf Size:114K _diodes

ZXTP2029F
ZXTP2029F

ZXTP2008Z 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions. SOT89 FEATURES • 5.5 amps continuous current • Up to

4.6. zxtp2039f.pdf Size:155K _diodes

ZXTP2029F
ZXTP2029F

ZXTP2039F SOT23 80 volt PNP silicon planar medium power transistor Summary V(BR)CEV > -80V V(BR)CEO > -60V Ic(cont) = -1A Vce(sat) < -600mV @ -1A Complementary type ZXTN2038F Description This transistor combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching. Features ¦ Low saturation voltage

4.7. zxtp2012z.pdf Size:125K _diodes

ZXTP2029F
ZXTP2029F

ZXTP2012Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions. FEATURES SOT89 • Extremely low equivalent on-resistance

4.8. zxtp2012g.pdf Size:127K _diodes

ZXTP2029F
ZXTP2029F

ZXTP2012G 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -60V : RSAT = 39m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES SOT223 • Extremely low equivalent on-resistance; R

4.9. zxtp2013z.pdf Size:95K _diodes

ZXTP2029F
ZXTP2029F

ZXTP2013Z 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions. FEATURES • 3.5 amps continuous current SOT89 • Up t

4.10. zxtp2008g.pdf Size:115K _diodes

ZXTP2029F
ZXTP2029F

ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES SOT223 • 5.5 Amps continuous current • Up to 20 amps peak curr

4.11. zxtp2014g.pdf Size:114K _diodes

ZXTP2029F
ZXTP2029F

ZXTP2014G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new low saturation 140V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES SOT223 • 4 amps continuous current • Up to 10 a

4.12. zxtp2014z.pdf Size:111K _diodes

ZXTP2029F
ZXTP2029F

ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions. FEATURES • 3 amps continuous current SOT89 • Up to 10

4.13. zxtp2009z.pdf Size:126K _diodes

ZXTP2029F
ZXTP2029F

ZXTP2009Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 40V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions. FEATURES SOT89 • Extremely low equivalent on

4.14. zxtp2013.pdf Size:1115K _kexin

ZXTP2029F
ZXTP2029F

ο»ΏSMD Type Transistors PNP Transistors ZXTP2013 (KXTP2013) Unit:mm SOT-223 6.50Β±0.2 3.00Β±0.1 β–  Features 4 ● 5 A continuous current ● Up to 10 A peak current ● Very low saturation voltages 1 2 3 0.250 2.30 (typ) Gauge Plane 1.Base 2.Collector 0.70Β±0.1 3.Emitter 4.60 (typ) 4.Collector β–  Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Colle

4.15. zxtp2014z.pdf Size:962K _kexin

ZXTP2029F
ZXTP2029F

ο»ΏSMD Type Transistors PNP Transistors ZXTP2014Z (KXTP2014Z) β–  Features 1.70 0.1 ● 3 amps continuous current ● Up to 10 amps peak current ● Very low saturation voltages ● Marking: 955 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter β–  Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCE

See also transistors datasheet: ZXTP19100CFF , ZXTP19100CG , ZXTP19100CZ , ZXTP2012G , ZXTP2012Z , ZXTP2013G , ZXTP2013Z , ZXTP2027F , MD1803DFX , ZXTP2039F , ZXTP25060BFH , ZXTP25100BFH , ZXTP25100CFH , ZXTP25100CZ , ZXTP722MA , 2SA1943 , 2SC5200 .

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BJT: KTC9012SC | KZT1049A | KZT1048A | KXTP2013 | KXT5551 | KXT5401 | KXT2907A | KXT2222A | KZT2907A | KZT2222A | KZT127 | KZT122 | KZT1151A | KZT1149A | KZT1053A | INC2002AU1 | INC2002AM1 | INC2002AC1 | INA5008AH1 | INA5006AC1 |

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