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FJB102 Transistor (IC) Datasheet. Cross Reference Search. FJB102 Equivalent

Type Designator: FJB102

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 80

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 8

Maksimalna temperatura (Tj), °C:

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 1000

Noise Figure, dB: -

Package of FJB102 transistor: TO263

FJB102 Transistor Equivalent Substitute - Cross-Reference Search

FJB102 PDF:

1.1. fjb102.pdf Size:159K _fairchild_semi

FJB102
FJB102

FJB102 High Voltage Power Darlington Transistor Features High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) Low Collector-Emitter Saturation Voltage High Collector-Emitter Sustaining Voltage Monolithic Construction with Built-in Base-Emitter Shunt Resistors Industrial Use Equivalent Circuit C B D2-PAK 1 R1 R2 1.Base 2.Collector 3.Emitter E R1 ? 10k? R2 ? 0.6k? Absol

See also transistors datasheet: 2SA1943 , 2SC5200 , BDW94CF , FJA13009 , FJA4210 , FJA4213 , FJA4310 , FJA4313 , 2SC1740 , FJB3307D , FJD3076 , FJD3305H1 , FJD5304D , FJD5553 , FJD5555 , FJE3303 , FJE5304D .

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 FJB102 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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