FJB102 Transistor Datasheet. Parameters and Characteristics.

Type Designator: FJB102

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 80

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 8

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 1000

Noise Figure, dB: -

Package of FJB102 transistor: TO263(D2PAK)

FJB102 Equivalent Transistors - Cross-Reference Search

FJB102 PDF document for downloads:

1.1. fjb102.pdf Size:159K _fairchild_semi

FJB102 High Voltage Power Darlington Transistor Features • High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) • Low Collector-Emitter Saturation Voltage • High Collector-Emitter Sustaining Voltage • Monolithic Construction with Built-in Base-Emitter Shunt Resistors • Industrial Use Equivalent Circuit C B D2-PAK 1 R1 R2 1.Base 2.Collector 3.Emitter E R1 ? 10k? R2 ? 0.6k? Absolute Maximum Ratings Symbol Parameter Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 8 A ICP * Collector Current (Pulse) 15 A IB Base Current (DC) 1 A PC Collector Dissipation (TC = 25°C) 80 W TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C * Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FJB102 FJB102 D2-PAK 13” Dia - 800 ©2005 Fairchild Semiconductor Corporation 1 www

See also transistors datasheet: 2SA1943 , 2SC5200 , BDW94CF , FJA13009 , FJA4210 , FJA4213 , FJA4310 , FJA4313 , KT805AM , FJB3307D , FJD3076 , FJD3305H1 , FJD5304D , FJD5553 , FJD5555 , FJE3303 , FJE5304D .

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